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Fabrication of 1.3μm InGaAsP/InP Gain-Coupled DFB Lasers with Loss Grating Using LPE Technique
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作者 王文 《High Technology Letters》 EI CAS 1996年第2期28-30,共3页
In this paper,the fabrication of 1.3μm InGaAsP/InP gain-coupled DFB lasers with lossgrating is reported for the first time.A technique of regrowth on corrugated surface usingLPE is developed.By using GaAs as the cove... In this paper,the fabrication of 1.3μm InGaAsP/InP gain-coupled DFB lasers with lossgrating is reported for the first time.A technique of regrowth on corrugated surface usingLPE is developed.By using GaAs as the cover of thermal protection and controlling theamount of the super cooling,high quality epitxial layers on corrugated surface are obtained.The oxide stripe lasers with a stripe width of 20μm are fabricated.Single-mode oscillation isachieved at 1.293μm,and a high single-mode oscillation yield is also obtained. 展开更多
关键词 Liquid phase EPITAXY Gain coupling DFB Semiconductor lasers
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