To improve the optical and electrical properties of AlGaN-based deep ultraviolet lasers,an inverse-trapezoidal electron blocking layer is designed.Lasers with three different structural electron blocking layers of rec...To improve the optical and electrical properties of AlGaN-based deep ultraviolet lasers,an inverse-trapezoidal electron blocking layer is designed.Lasers with three different structural electron blocking layers of rectangular,trapezoidal and inverse-trapezoidal structures are established.The energy band,electron concentration,electron current density,P-I and V-I characteristics,and the photoelectric conversion efficiency of different structural devices are investigated by simulation.The results show that the optical and electrical properties of the inversetrapezoidal electron blocking layer laser are better than those of rectangular and trapezoidal structures,owing to the effectively suppressed electron leakage.展开更多
基金the National Natural Science Foundation of China under Grant No.61176008the Special Project for Intergovernment Collaboration of State Key Research and Development Program under Grant No.2016YFE0118400+1 种基金the Key Project of Science and Technology of Henan Province under Grant No.172102410062the National Natural Science Foundation of China-Henan Provincial Joint Fund for Key Project under Grant No.U1604263.
文摘To improve the optical and electrical properties of AlGaN-based deep ultraviolet lasers,an inverse-trapezoidal electron blocking layer is designed.Lasers with three different structural electron blocking layers of rectangular,trapezoidal and inverse-trapezoidal structures are established.The energy band,electron concentration,electron current density,P-I and V-I characteristics,and the photoelectric conversion efficiency of different structural devices are investigated by simulation.The results show that the optical and electrical properties of the inversetrapezoidal electron blocking layer laser are better than those of rectangular and trapezoidal structures,owing to the effectively suppressed electron leakage.
