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Grow Large High-Quality Diamonds with Different Seed Surfaces 被引量:4
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作者 臧传义 贾晓鹏 +3 位作者 马红安 李尚升 田宇 肖鸿宇 《Chinese Physics Letters》 SCIE CAS CSCD 2006年第1期214-216,共3页
Large high-quality type Ib diamond crystals have been grown with different seed surfaces by temperature gradient method at 5.5 CPa, 1500-1600K, with NiMnCo alloy as the metal solvent. Compared with {100} as the growth... Large high-quality type Ib diamond crystals have been grown with different seed surfaces by temperature gradient method at 5.5 CPa, 1500-1600K, with NiMnCo alloy as the metal solvent. Compared with {100} as the growth surface, the growth region of large high-quality diamond crystals with {111} as the growth surface at a higher growth rate shifts markedly from lower temperatures (suitable for {100}-facet growth) to higher temperatures (suitable for {111}-facet growth). However, regardless of different growth surfaces, {100} or {111}, the grown crystals of sheet-shaped shape are most difflcult for metal inclusions to be trapped into, and whether or not matched growth between the seed surfaces and the growth temperatures determines the crystal shapes. In view of the growth rates, large high-quality diamond crystals of sheet-shaped shapes can be grown at a growth rate of above 2.5 mg/h, while the growth rate of large high-quality diamond crystals should not be beyond 1.5 mg/h for tower-shaped crystals. 展开更多
关键词 TEMPERATURE-GRADIENT METHOD SYNTHETIC DIAMONDS GEM DIAMONDS CRYSTALS RATES MORPHOLOGY
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Effect of Regrown Graphite on the Growth of Large Gem Diamonds by Temperature Gradient Method 被引量:5
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作者 臧传义 贾晓鹏 +2 位作者 马红安 田宇 肖鸿宇 《Chinese Physics Letters》 SCIE CAS CSCD 2005年第9期2415-2417,共3页
Generally, when growing high-quality large gem diamond crystals by temperature gradient method under high pressure and high temperature, the crystal growth rate is only determined by the temperature gradient. However,... Generally, when growing high-quality large gem diamond crystals by temperature gradient method under high pressure and high temperature, the crystal growth rate is only determined by the temperature gradient. However, we find that the seed crystal cannot completely absorb all the diffused carbon sources, when growing gem diamonds under a higher temperature gradient. Other influence factors appear, and the growth rate of growing diamonds is partly dependent on the crystalline form of superfluous unabsorbed carbon source, flaky regrown graphite or small diamond crystals nucleated spontaneously. The present form is determined by the growth temperature if the pressure is fixed. Different from spontaneous diamond nuclei, the appearance of regrown graphite in the diamondstable region can retard the growth rate of gem diamonds substantially, even if the temperature gradient keeps unchanged. On the other hand, the formation mechanism of metastable regrown graphite in the diamond-stable region is also explained. 展开更多
关键词 CRYSTALS RATES
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Wurtzite Boron Nitride Crystal Growth in the Region of Cubic Boron Nitride Crystal Synthesizing
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作者 ZHANG Tie-chen YU San +3 位作者 LI Dong-mei GUO Wei-li GAO Chun-xiao ZOU Guang-tian 《Chinese Physics Letters》 SCIE CAS CSCD 1998年第1期70-71,共2页
Micro-grains of wurtzite boron nitride(wBN)crystal have been observed in the region of 5.0-7.0 GPa pressure and 1800-2000 K temperature where cubic boron nitride has been synthesized in the presence of a catalyst.The ... Micro-grains of wurtzite boron nitride(wBN)crystal have been observed in the region of 5.0-7.0 GPa pressure and 1800-2000 K temperature where cubic boron nitride has been synthesized in the presence of a catalyst.The wBN grain size is about 20-30nm.The presence of these micro-grains indicates that the pressure for wBN growth could be lower than that found in the previous work. 展开更多
关键词 CATALYST BORON CRYSTAL
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