Low-Voltage IGZO Field-Effect Ultraviolet Photodiode

In the era of Internet of Things(Io Ts),an energy-efficient ultraviolet(UV)photodetector(PD)is highly desirable considering the massive usage scenarios such as environmental sterilization,fire alarm and corona discharge monitoring.So far,common self-powered UV PDs are mainly based on metal-semiconductor heterostructures or p–n heterojunctions,where the limited intrinsic built-in electric field restricts further enhancement of the photoresponsivity.In this work,an extremely low-voltage field-effect UV PD is proposed using a gatedrain shorted amorphous IGZO(a-IGZO)thin film transistor(TFT)architecture.A combined investigation of the experimental measurements and technology computer-aided design(TCAD)simulations suggests that the reverse current(ⅠR)of field-effect diode(FED)is highly related with the threshold voltage(Vth)of the parental TFT,implying an enhancement-mode TFT is preferable to fabricate the field-effect UV PD with low dark current.Driven by a low bias of-0.1 V,decent UV response has been realized including large UV/visible(R_(300)/R_(550))rejection ratio(1.9×10^(3)),low dark current(1.15×10^(-12)A)as well as high photo-to-dark current ratio(PDCR,~10^(3))and responsivity(1.89 A/W).This field-effect photodiode provides a new platform to construct UV PDs with well-balanced photoresponse performance at a low bias,which is attractive for designs of large-scale smart sensor networks with high energy efficiency.

Broadband high-efficiency plasmonic metalens with negative dispersion characteristic

Controlling the dispersion characteristic of metasurfaces(or metalenses) along a broad bandwidth is of great importance to develop high-performance broadband metadevices. Different from traditional lenses that rely on the material refractive index along the light trajectory, metasurfaces or metalenses provide a new regime of dispersion control via a sub-wavelength metastructure, which is known as negative chromatic dispersion.However, broadband metalenses design with high-performance focusing especially with a reduced device dimension is a significant challenge in society. Here, we design, fabricate, and demonstrate a broadband highperformance diffractive-type plasmonic metalens based on a circular split-ring resonator metasurface with a relative working bandwidth of 28.6%. The metalens thickness is only 0.09λ0(λ0is at the central wavelength),which is much thinner than previous broadband all-dielectric metalenses. The full-wave simulation results show that both high transmissive efficiency above 80%(the maximum is even above 90%) and high average focusing efficiency above 45%(the maximum is 56%) are achieved within the entire working bandwidth of 9–12 GHz.Moreover, an average high numerical aperture of 0.7(NA = 0.7) of high-efficiency microwave metalens is obtained in the simulations. The broadband high-performance metalens is also fabricated and experimental measurements verify its much higher average focusing efficiency of 55%(the maximum is above 65% within the broad bandwidth) and a moderate high NA of 0.6. The proposed plasmonic metalens can facilitate the development of wavelength-dependent broadband diffractive devices and is also meaningful to further studies on arbitrary dispersion control in diffractive optics based on plasmonic metasurfaces.