In the era of Internet of Things(Io Ts),an energy-efficient ultraviolet(UV)photodetector(PD)is highly desirable considering the massive usage scenarios such as environmental sterilization,fire alarm and corona dischar...In the era of Internet of Things(Io Ts),an energy-efficient ultraviolet(UV)photodetector(PD)is highly desirable considering the massive usage scenarios such as environmental sterilization,fire alarm and corona discharge monitoring.So far,common self-powered UV PDs are mainly based on metal-semiconductor heterostructures or p–n heterojunctions,where the limited intrinsic built-in electric field restricts further enhancement of the photoresponsivity.In this work,an extremely low-voltage field-effect UV PD is proposed using a gatedrain shorted amorphous IGZO(a-IGZO)thin film transistor(TFT)architecture.A combined investigation of the experimental measurements and technology computer-aided design(TCAD)simulations suggests that the reverse current(ⅠR)of field-effect diode(FED)is highly related with the threshold voltage(Vth)of the parental TFT,implying an enhancement-mode TFT is preferable to fabricate the field-effect UV PD with low dark current.Driven by a low bias of-0.1 V,decent UV response has been realized including large UV/visible(R_(300)/R_(550))rejection ratio(1.9×10^(3)),low dark current(1.15×10^(-12)A)as well as high photo-to-dark current ratio(PDCR,~10^(3))and responsivity(1.89 A/W).This field-effect photodiode provides a new platform to construct UV PDs with well-balanced photoresponse performance at a low bias,which is attractive for designs of large-scale smart sensor networks with high energy efficiency.展开更多
Controlling the dispersion characteristic of metasurfaces(or metalenses) along a broad bandwidth is of great importance to develop high-performance broadband metadevices. Different from traditional lenses that rely on...Controlling the dispersion characteristic of metasurfaces(or metalenses) along a broad bandwidth is of great importance to develop high-performance broadband metadevices. Different from traditional lenses that rely on the material refractive index along the light trajectory, metasurfaces or metalenses provide a new regime of dispersion control via a sub-wavelength metastructure, which is known as negative chromatic dispersion.However, broadband metalenses design with high-performance focusing especially with a reduced device dimension is a significant challenge in society. Here, we design, fabricate, and demonstrate a broadband highperformance diffractive-type plasmonic metalens based on a circular split-ring resonator metasurface with a relative working bandwidth of 28.6%. The metalens thickness is only 0.09λ0(λ0is at the central wavelength),which is much thinner than previous broadband all-dielectric metalenses. The full-wave simulation results show that both high transmissive efficiency above 80%(the maximum is even above 90%) and high average focusing efficiency above 45%(the maximum is 56%) are achieved within the entire working bandwidth of 9–12 GHz.Moreover, an average high numerical aperture of 0.7(NA = 0.7) of high-efficiency microwave metalens is obtained in the simulations. The broadband high-performance metalens is also fabricated and experimental measurements verify its much higher average focusing efficiency of 55%(the maximum is above 65% within the broad bandwidth) and a moderate high NA of 0.6. The proposed plasmonic metalens can facilitate the development of wavelength-dependent broadband diffractive devices and is also meaningful to further studies on arbitrary dispersion control in diffractive optics based on plasmonic metasurfaces.展开更多
基金supported by the National Natural Science Foundation of China(Grant Nos.62174113,12174275,and 61874139)the Guangdong Basic and Applied Basic Research Foundation(Grant Nos.2019B1515120057,2023A1515140094,and 2023A1515110730)。
文摘In the era of Internet of Things(Io Ts),an energy-efficient ultraviolet(UV)photodetector(PD)is highly desirable considering the massive usage scenarios such as environmental sterilization,fire alarm and corona discharge monitoring.So far,common self-powered UV PDs are mainly based on metal-semiconductor heterostructures or p–n heterojunctions,where the limited intrinsic built-in electric field restricts further enhancement of the photoresponsivity.In this work,an extremely low-voltage field-effect UV PD is proposed using a gatedrain shorted amorphous IGZO(a-IGZO)thin film transistor(TFT)architecture.A combined investigation of the experimental measurements and technology computer-aided design(TCAD)simulations suggests that the reverse current(ⅠR)of field-effect diode(FED)is highly related with the threshold voltage(Vth)of the parental TFT,implying an enhancement-mode TFT is preferable to fabricate the field-effect UV PD with low dark current.Driven by a low bias of-0.1 V,decent UV response has been realized including large UV/visible(R_(300)/R_(550))rejection ratio(1.9×10^(3)),low dark current(1.15×10^(-12)A)as well as high photo-to-dark current ratio(PDCR,~10^(3))and responsivity(1.89 A/W).This field-effect photodiode provides a new platform to construct UV PDs with well-balanced photoresponse performance at a low bias,which is attractive for designs of large-scale smart sensor networks with high energy efficiency.
基金National Key Laboratory of Scattering and Radiation。
文摘Controlling the dispersion characteristic of metasurfaces(or metalenses) along a broad bandwidth is of great importance to develop high-performance broadband metadevices. Different from traditional lenses that rely on the material refractive index along the light trajectory, metasurfaces or metalenses provide a new regime of dispersion control via a sub-wavelength metastructure, which is known as negative chromatic dispersion.However, broadband metalenses design with high-performance focusing especially with a reduced device dimension is a significant challenge in society. Here, we design, fabricate, and demonstrate a broadband highperformance diffractive-type plasmonic metalens based on a circular split-ring resonator metasurface with a relative working bandwidth of 28.6%. The metalens thickness is only 0.09λ0(λ0is at the central wavelength),which is much thinner than previous broadband all-dielectric metalenses. The full-wave simulation results show that both high transmissive efficiency above 80%(the maximum is even above 90%) and high average focusing efficiency above 45%(the maximum is 56%) are achieved within the entire working bandwidth of 9–12 GHz.Moreover, an average high numerical aperture of 0.7(NA = 0.7) of high-efficiency microwave metalens is obtained in the simulations. The broadband high-performance metalens is also fabricated and experimental measurements verify its much higher average focusing efficiency of 55%(the maximum is above 65% within the broad bandwidth) and a moderate high NA of 0.6. The proposed plasmonic metalens can facilitate the development of wavelength-dependent broadband diffractive devices and is also meaningful to further studies on arbitrary dispersion control in diffractive optics based on plasmonic metasurfaces.