By using reduced pressure chemical vapor deposition (RPCVD), the high strained, Ge-graded SiGe film growth has been realized. The film was used as a base of the HBT (Heterojunction Bipolar Transistor) developed in 0....By using reduced pressure chemical vapor deposition (RPCVD), the high strained, Ge-graded SiGe film growth has been realized. The film was used as a base of the HBT (Heterojunction Bipolar Transistor) developed in 0.35 μm SiGe BiCMOS process technology, and made the device give good DC characteristics (β > 100) and high-frequency performance (fT = 67 GHz), thus meeting the requirements for technical specifications in 0.35 μm SiGe BiCMOS process technology.展开更多
The characteristics of radiation damage under a high or low dose rate in lateral PNP transistors with a heavily or lightly doped emitter is investigated. Experimental results show that as the total dose increases, the...The characteristics of radiation damage under a high or low dose rate in lateral PNP transistors with a heavily or lightly doped emitter is investigated. Experimental results show that as the total dose increases, the base current of transistors would increase and the current gain decreases. Furthermore, more degradation has been found in lightly-doped PNP transistors, and an abnormal effect is observed in heavily doped transistors. The role of radiation defects, especially the double effects of oxide trapped charge, is discussed in heavily or lightly doped transistors. Finally, through comparison between the high- and low-dose-rate response of the collector current in heavily doped lateral PNP transistors, the abnormal effect can be attributed to the annealing of the oxide trapped charge. The response of the collector current, in heavily doped PNP transistors under high- and low-dose-rate irradiation is described in detail.展开更多
Two types of 5μm thick hybrid orientation structure wafers,which were integrated by（110）or（100） orientation silicon wafers as the substrate,have been investigated for 15-40 V voltage ICs and MEMS sensor applicati...Two types of 5μm thick hybrid orientation structure wafers,which were integrated by（110）or（100） orientation silicon wafers as the substrate,have been investigated for 15-40 V voltage ICs and MEMS sensor applications.They have been obtained mainly by SOI wafer bonding and a non-selective epitaxy technique,and have been presented in China for the first time.The thickness of BOX SiO2 buried in wafer is 220 nm.It has been found that the quality of hybrid orientation structure with（100）wafer substrate is better than that with（110）wafer substrate by＂Sirtl defect etching of HOSW＂.展开更多
文摘By using reduced pressure chemical vapor deposition (RPCVD), the high strained, Ge-graded SiGe film growth has been realized. The film was used as a base of the HBT (Heterojunction Bipolar Transistor) developed in 0.35 μm SiGe BiCMOS process technology, and made the device give good DC characteristics (β > 100) and high-frequency performance (fT = 67 GHz), thus meeting the requirements for technical specifications in 0.35 μm SiGe BiCMOS process technology.
基金supported by the Foundation of National Key Laboratory of Integrated Analog Circuits,China(No.9140C090403070C09).
文摘The characteristics of radiation damage under a high or low dose rate in lateral PNP transistors with a heavily or lightly doped emitter is investigated. Experimental results show that as the total dose increases, the base current of transistors would increase and the current gain decreases. Furthermore, more degradation has been found in lightly-doped PNP transistors, and an abnormal effect is observed in heavily doped transistors. The role of radiation defects, especially the double effects of oxide trapped charge, is discussed in heavily or lightly doped transistors. Finally, through comparison between the high- and low-dose-rate response of the collector current in heavily doped lateral PNP transistors, the abnormal effect can be attributed to the annealing of the oxide trapped charge. The response of the collector current, in heavily doped PNP transistors under high- and low-dose-rate irradiation is described in detail.
基金Project supported by the National Basic Research Program of China(No61398)the National Laboratory of Analog Integrated Circuits Foundation of China(NoYZ0808)
文摘Two types of 5μm thick hybrid orientation structure wafers,which were integrated by（110）or（100） orientation silicon wafers as the substrate,have been investigated for 15-40 V voltage ICs and MEMS sensor applications.They have been obtained mainly by SOI wafer bonding and a non-selective epitaxy technique,and have been presented in China for the first time.The thickness of BOX SiO2 buried in wafer is 220 nm.It has been found that the quality of hybrid orientation structure with（100）wafer substrate is better than that with（110）wafer substrate by＂Sirtl defect etching of HOSW＂.
