Formation of superhard materials carbon nitride CNt by using ion-beam synthesis method is reported.100-keV high-dose N+ ions were implanted into carbon thin films at different temperatures.The samples were evaluated b...Formation of superhard materials carbon nitride CNt by using ion-beam synthesis method is reported.100-keV high-dose N+ ions were implanted into carbon thin films at different temperatures.The samples were evaluated by X-ray photoelectron spectroscopy (XPS),Fourier transformation-infrared absorption spectroscopy (FTIR),Raman spectroscopy,cross-sectional transmission electron microscopy (XTEM),Rutherford backscattering spectroscopy (RBS).X-ray diffraction analysis (XRD) and Vickers microhardness measurement.The results show that the buried carbon nitride CN> layer has been successfully formed by using 100-keV high-dose N+ ions implantation into carbon thin film.Implantation of reactive ions into silicon (IRIS) computer program has been used to simulate the formation of the buried β-C3N4 layer as N+ ions are implanted into carbon.A good agreement between experimental measurements and IRIS simulation is found.展开更多
The effects of N+ implantation under various conditions on CVD diamond films were analyzed with Raman spectroscopy, four-point probe method, X-ray diffraction (XRD), Rutherford backseattering spectroscopy (RBS), ultra...The effects of N+ implantation under various conditions on CVD diamond films were analyzed with Raman spectroscopy, four-point probe method, X-ray diffraction (XRD), Rutherford backseattering spectroscopy (RBS), ultraviolet photoluminescence spectroscopy (UV-PL), Fourier transformation infrared absorption spectroscopy (FTIR) and X-ray photoelectron spectroscopy (XPS). The results show that the N+ implantation doping without any graphitization has been successfully realized when 100 keV N+ ions at a dosage of 2 × 1016 cm-2 were implanted into diamond films at 550℃ . UV-PL spectra indicate that the implanted N+ ions formed an electrically inactive deep-level impurity in diamond films. So the sheet resistance of the sample after N+ implantation changed little. Carbon nitride containing C≡N covalent bond has been successfully synthesized by 100 keV, 1.2×1018 N/cm2 N+ implantation into diamond films. Most of the implanted N+ ions formed C≡N covalent bonds with C atoms. The others were free state nitrogen, which existed in the excessive nitrogen layers. C(1s) XPS studies show the existence of three different C(1s) bonding states, corresponding to graphite, i-carbon and the carbon of C≡N covalent bonding state, respectively, which agrees well with the Raman results.展开更多
文摘Formation of superhard materials carbon nitride CNt by using ion-beam synthesis method is reported.100-keV high-dose N+ ions were implanted into carbon thin films at different temperatures.The samples were evaluated by X-ray photoelectron spectroscopy (XPS),Fourier transformation-infrared absorption spectroscopy (FTIR),Raman spectroscopy,cross-sectional transmission electron microscopy (XTEM),Rutherford backscattering spectroscopy (RBS).X-ray diffraction analysis (XRD) and Vickers microhardness measurement.The results show that the buried carbon nitride CN> layer has been successfully formed by using 100-keV high-dose N+ ions implantation into carbon thin film.Implantation of reactive ions into silicon (IRIS) computer program has been used to simulate the formation of the buried β-C3N4 layer as N+ ions are implanted into carbon.A good agreement between experimental measurements and IRIS simulation is found.
文摘The effects of N+ implantation under various conditions on CVD diamond films were analyzed with Raman spectroscopy, four-point probe method, X-ray diffraction (XRD), Rutherford backseattering spectroscopy (RBS), ultraviolet photoluminescence spectroscopy (UV-PL), Fourier transformation infrared absorption spectroscopy (FTIR) and X-ray photoelectron spectroscopy (XPS). The results show that the N+ implantation doping without any graphitization has been successfully realized when 100 keV N+ ions at a dosage of 2 × 1016 cm-2 were implanted into diamond films at 550℃ . UV-PL spectra indicate that the implanted N+ ions formed an electrically inactive deep-level impurity in diamond films. So the sheet resistance of the sample after N+ implantation changed little. Carbon nitride containing C≡N covalent bond has been successfully synthesized by 100 keV, 1.2×1018 N/cm2 N+ implantation into diamond films. Most of the implanted N+ ions formed C≡N covalent bonds with C atoms. The others were free state nitrogen, which existed in the excessive nitrogen layers. C(1s) XPS studies show the existence of three different C(1s) bonding states, corresponding to graphite, i-carbon and the carbon of C≡N covalent bonding state, respectively, which agrees well with the Raman results.
