Plasma source ion nitriding has emerged as a low-temperature,low-pressure nitriding approach for implanting nitrogen ions and then diffusing them into bulk materials.The ion-plating B-C films were nitrided to synthesi...Plasma source ion nitriding has emerged as a low-temperature,low-pressure nitriding approach for implanting nitrogen ions and then diffusing them into bulk materials.The ion-plating B-C films were nitrided to synthesize B-C-N films at a nitriding temperature from 300 to 500℃.The x-ray photoelectron spectroscopy and diffuse reflectance Fourier transform infrared spectra analyses showed that the amorphous B-C-N films synthesized at 500℃ are composed mainly of cubic-BN-like and hexagonal-BN-like plain microdomains.The higher nitriding temperature contributes to the formation of cubic-BN-like B-C-N structure in the B-C-N films.展开更多
A model is developed that describes the temporal evolution of the sheath during a pulse of high negative voltage applied to a spherical and cylindrical target in a plasma such as that present in plasma source ion impl...A model is developed that describes the temporal evolution of the sheath during a pulse of high negative voltage applied to a spherical and cylindrical target in a plasma such as that present in plasma source ion implantation for the case in which the pressure of the neutraJ gas is large enough that the ion motion in the sheath can be assumed to be highly collisional.The analytic expressions of the sheath expanding velocity are obtained.The positions of the shea th edge as a function of time predicted by the model are in agreement with those obtained by Huid equations.展开更多
基金Supported by the National Natural Science Foundation of China under Grant No.59402009.
文摘Plasma source ion nitriding has emerged as a low-temperature,low-pressure nitriding approach for implanting nitrogen ions and then diffusing them into bulk materials.The ion-plating B-C films were nitrided to synthesize B-C-N films at a nitriding temperature from 300 to 500℃.The x-ray photoelectron spectroscopy and diffuse reflectance Fourier transform infrared spectra analyses showed that the amorphous B-C-N films synthesized at 500℃ are composed mainly of cubic-BN-like and hexagonal-BN-like plain microdomains.The higher nitriding temperature contributes to the formation of cubic-BN-like B-C-N structure in the B-C-N films.
基金Supported by the National Natural Science Foundation of Cliina.
文摘A model is developed that describes the temporal evolution of the sheath during a pulse of high negative voltage applied to a spherical and cylindrical target in a plasma such as that present in plasma source ion implantation for the case in which the pressure of the neutraJ gas is large enough that the ion motion in the sheath can be assumed to be highly collisional.The analytic expressions of the sheath expanding velocity are obtained.The positions of the shea th edge as a function of time predicted by the model are in agreement with those obtained by Huid equations.