Black phosphorus gives several advantages and complementarities over other two-dimensional materials.It has drawn extensive interest owing to its relatively high carrier mobility,wide tunable bandgap,and in-plane anis...Black phosphorus gives several advantages and complementarities over other two-dimensional materials.It has drawn extensive interest owing to its relatively high carrier mobility,wide tunable bandgap,and in-plane anisotropy in recent years.This manuscript briefly reviews the structure and physical properties of black phosphorus and targets on black phosphorus for photonic integrated circuits.Some of the applications are discussed including photodetection,optical modulation,light emission,and polarization conversion.Corresponding recent progresses,associated challenges,and future potentials are covered.展开更多
Infrared(IR)detection is vital for various military and civilian applications.Recent research has highlighted the potential of two-dimensional(2D)topological semimetals in IR detection due to their distinctive advanta...Infrared(IR)detection is vital for various military and civilian applications.Recent research has highlighted the potential of two-dimensional(2D)topological semimetals in IR detection due to their distinctive advantages,including van der Waals(vdW)stacking,gapless electronic structure,and Van Hove singularities in the electronic density of states.However,challenges such as large-scale patterning,poor photoresponsivity,and high dark current of photodetectors based on 2D topological semimetals significantly impede their wider applications in low-energy photon sensing.Here,we demonstrate the in situ fabrication of PtSe_(2)/Ge Schottky junction by directly depositing 2D PtSe_(2) films with a vertical layer structure on a Ge substrate with an ultrathin AlOx layer.Due to high quality junction,the photodetector features a broadband response of up to 4.6μm,along with a high specific detectivity of�1012 Jones,and operates with remarkable stability in ambient conditions as well.Moreover,the highly integrated device arrays based on PtSe_(2)/AlOx/Ge Schottky junction showcases excellent Mid-IR(MIR)imaging capability at room temperature.These findings highlight the promising prospects of 2D topological semimetals for uncooled IR photodetection and imaging applications.展开更多
基金supported in part by the National Key Research and Development Program of China under Grant 2019YFB2205303in part by the National Natural Science Foundation of China under Grant 62205054+1 种基金in part by the Natural Science Foundation of Jiangsu Province under Grant BK20210207in part by the Fundamental Research Funds for the Central Universities.
文摘Black phosphorus gives several advantages and complementarities over other two-dimensional materials.It has drawn extensive interest owing to its relatively high carrier mobility,wide tunable bandgap,and in-plane anisotropy in recent years.This manuscript briefly reviews the structure and physical properties of black phosphorus and targets on black phosphorus for photonic integrated circuits.Some of the applications are discussed including photodetection,optical modulation,light emission,and polarization conversion.Corresponding recent progresses,associated challenges,and future potentials are covered.
基金supported by the National Natural Science Foundation of China(Nos.U2004165,U22A20138,62374149,and 11974016)Natural Science Foundation of Henan Province,China(No.202300410376)grateful for the technical support from the Nano-X from Suzhou Institute of Nano-Tech and Nano-Bionics,Chinese Academy of Sciences(SINANO).
文摘Infrared(IR)detection is vital for various military and civilian applications.Recent research has highlighted the potential of two-dimensional(2D)topological semimetals in IR detection due to their distinctive advantages,including van der Waals(vdW)stacking,gapless electronic structure,and Van Hove singularities in the electronic density of states.However,challenges such as large-scale patterning,poor photoresponsivity,and high dark current of photodetectors based on 2D topological semimetals significantly impede their wider applications in low-energy photon sensing.Here,we demonstrate the in situ fabrication of PtSe_(2)/Ge Schottky junction by directly depositing 2D PtSe_(2) films with a vertical layer structure on a Ge substrate with an ultrathin AlOx layer.Due to high quality junction,the photodetector features a broadband response of up to 4.6μm,along with a high specific detectivity of�1012 Jones,and operates with remarkable stability in ambient conditions as well.Moreover,the highly integrated device arrays based on PtSe_(2)/AlOx/Ge Schottky junction showcases excellent Mid-IR(MIR)imaging capability at room temperature.These findings highlight the promising prospects of 2D topological semimetals for uncooled IR photodetection and imaging applications.
