Electro-optical/infrared (EO/IR) sensors and photovoltaic power sources are being developed for a variety of defense and commercial applications. One of the critical technologies that will enhance both EO/IR sensor an...Electro-optical/infrared (EO/IR) sensors and photovoltaic power sources are being developed for a variety of defense and commercial applications. One of the critical technologies that will enhance both EO/IR sensor and photovoltaic module performance is the development of high quality nanostructure-based antireflection coatings. In this paper, we review our work on advanced antireflection structures that have been designed by using a genetic algorithm and fabricated by using oblique angle deposition. The antireflection coatings are designed for the wavelength range of 250 nm to 2500 nm and an incidence angle between 00 and 400. These nanostructured antireflection coatings are shown to enhance the optical transmission through transparent windows over a wide band of interest and minimize broadband reflection losses to less than one percent, a substantial improvement over conventional thin-film antireflection coating technologies.展开更多
We investigated the electrical contact characteristics of indium tin oxide (ITO)/doped hydrogenated amorphous silicon (a-Si:H) junctions. For efficient collection of photo-generated carriers, photovoltaic and photodet...We investigated the electrical contact characteristics of indium tin oxide (ITO)/doped hydrogenated amorphous silicon (a-Si:H) junctions. For efficient collection of photo-generated carriers, photovoltaic and photodetector devices require good ohmic contacts with transparent electrodes. The amorphous-Si thin films were sputter deposited on ITO coated glass substrates. As-deposited p-type a-Si:H on ITO formed nearly ohmic type contacts and further annealing did not improve the contact characteristics. On the other hand, as-deposited n-type a-Si:H on ITO formed an ohmic contact, while further annealing resulted in a Schottky type contact. The ITO contact with p-type silicon semiconductor is a ro-bust ohmic contact for Si based optoelectronic devices.展开更多
文摘Electro-optical/infrared (EO/IR) sensors and photovoltaic power sources are being developed for a variety of defense and commercial applications. One of the critical technologies that will enhance both EO/IR sensor and photovoltaic module performance is the development of high quality nanostructure-based antireflection coatings. In this paper, we review our work on advanced antireflection structures that have been designed by using a genetic algorithm and fabricated by using oblique angle deposition. The antireflection coatings are designed for the wavelength range of 250 nm to 2500 nm and an incidence angle between 00 and 400. These nanostructured antireflection coatings are shown to enhance the optical transmission through transparent windows over a wide band of interest and minimize broadband reflection losses to less than one percent, a substantial improvement over conventional thin-film antireflection coating technologies.
文摘We investigated the electrical contact characteristics of indium tin oxide (ITO)/doped hydrogenated amorphous silicon (a-Si:H) junctions. For efficient collection of photo-generated carriers, photovoltaic and photodetector devices require good ohmic contacts with transparent electrodes. The amorphous-Si thin films were sputter deposited on ITO coated glass substrates. As-deposited p-type a-Si:H on ITO formed nearly ohmic type contacts and further annealing did not improve the contact characteristics. On the other hand, as-deposited n-type a-Si:H on ITO formed an ohmic contact, while further annealing resulted in a Schottky type contact. The ITO contact with p-type silicon semiconductor is a ro-bust ohmic contact for Si based optoelectronic devices.
