In-plane optical anisotropy which comes from the heavy hole and the light hole transitions in an InAs monolayer inserted in(311)-oriented GaAs matrix is observed by reflectance difference spectroscopy.The observed ste...In-plane optical anisotropy which comes from the heavy hole and the light hole transitions in an InAs monolayer inserted in(311)-oriented GaAs matrix is observed by reflectance difference spectroscopy.The observed steplike density of states demonstrates that the InAs layer behaves like a two-dimensional quantum well rather than isolated quantum dots.The magnitude of the anisotropy is in good agreement with the intrinsic anisotropy of(311)orientation quantum wells,indicating that there is little structural or strain anisotropy of the InAs layer grown on(311)-oriented GaAs surface.展开更多
基金Supported by the National Natural Science Foundation of China under Grant No.F040105.
文摘In-plane optical anisotropy which comes from the heavy hole and the light hole transitions in an InAs monolayer inserted in(311)-oriented GaAs matrix is observed by reflectance difference spectroscopy.The observed steplike density of states demonstrates that the InAs layer behaves like a two-dimensional quantum well rather than isolated quantum dots.The magnitude of the anisotropy is in good agreement with the intrinsic anisotropy of(311)orientation quantum wells,indicating that there is little structural or strain anisotropy of the InAs layer grown on(311)-oriented GaAs surface.
