Composite electron transport layer for efficient N-I-P type monolithic perovskite/silicon tandem solar cells with high open-circuit voltage

Perovskite/silicon tandem solar cells(PSTSCs) have exhibited huge technological potential for breaking the Shockley-Queisser limit of single-junction solar cells. The efficiency of P-I-N type PSTSCs has surpassed the single-junction limit, while the performance of N-I-P type PSTSCs is far below the theoretical value. Here, we developed a composite electron transport layer for N-I-P type monolithic PSTSCs with enhanced open-circuit voltage(VOC) and power conversion efficiency(PCE). Lithium chloride(Li Cl) was added into the tin oxide(SnO_(2)) precursor solution, which simultaneously passivated the defects and increased the electron injection driving force at the electron transfer layer(ETL)/perovskite interface.Eventually, we achieved monolithic PSTSCs with an efficiency of 25.42% and V_(OC) of 1.92 V, which is the highest PCE and VOCin N-I-P type perovskite/Si tandem devices. This work on interface engineering for improving the PCE of monolithic PSTSCs may bring a new hot point about perovskite-based tandem devices.

Highly transmitted silver nanowires-SWCNTs conductive flexible film by nested density structure and aluminum-doped zinc oxide capping layer for flexible amorphous silicon solar cells

Indium tin oxide(ITO)is widely used in transparent conductive films(TCFs);however,several disadvan-tages,such as high cost and toxicity of indium,limit its applications.Therefore,it is necessary to develop other materials that can replace ITO.Silver nanowires or single walled carbon nanotubes(SWCNTs)have attracted considerable interest owing to their unique electrical,optical,and thermal stabilities,and thus,they are ideal for transparent electrodes for flexible or stretchable devices.In this study,we develop a novel architecture of composite TCFs on a polyethylene naphthalate(PEN)flexible substrate.Herein,the silver nanowires-SWCNTs films with nested density structure were fabricated through ultrasonic spraying technology by varying the spraying width.For achieving enhanced transmittance,we combined the larger irregular grids and holes with fewer nanowires stacked in the longitudinal direction,more optical chan-nels,and good carrier transport.Thereafter,aluminum-doped zinc oxide(AZO)was used as capping to the structure for enhancing the optical properties of the TCFs.The silver nanowires-SWCNTs/AZO(ASA)bilayer was obtained in the optimized architecture,which showed superior optoelectronic performance to that shown by commercial ITO with a high optical transmittance of 92%at the wavelength of 550 nm and low sheet resistance of 17/sq.In the specially structured conductive film,the significant improvement in the transmittance and uniformity of the sheet resistance was attributed to the effective nanowire junc-tion contact compared to that in ordinary structure of silver nanowires,which reduced the mean density of small clusters of nanowires.Compared with the silver nanowires-SWCNTs films,the ASA bilayer film exhibited excellent resistance to boiling,mechanical bending(10,000 cycles),and CO_(2)plasma.Moreover,the sheet resistance of ASA changed slightly after the tape tests,thereby illustrating a strong adhesion to the PEN substrate after the enclosure of AZO.Meanwhile,the AZO capping layer can enhance the op-tical transmittance between 600 and 1500 nm.In addition,the amorphous silicon photovoltaic devices with flexible ASA TCFs exhibited a power conversion efficiency(PCE)of 8.67%.After bending for 3000 times,the PCE was decreased to 8.20%,thereby demonstrating the potential of developed films to replace traditional ITO.