ZnO thin films were deposited using the simple, flexible and cost-effective spray ultrasonic technique at different precursor molarities values. The films were deposited on a glass substrate at 350℃. This paper is to...ZnO thin films were deposited using the simple, flexible and cost-effective spray ultrasonic technique at different precursor molarities values. The films were deposited on a glass substrate at 350℃. This paper is to present a new approach to the description of correlation between electrical conductivity and optical gap energy with precursor molarity of ZnO thin films. The ZnO films exhibit higher electrical n-type semiconductors, whose band gap energy increased from 3.08 to 3.37 eV with an increasing of precursor molarity of 0.05 to 0.1 M. The maximum value of electrical conductivity of the films is 7.96 （S2.cm）-1 obtained in the ZnO thin film for precursor molarity 0.125 M. The correlation between the electrical and the optical properties with the precursor molarity suggests that the electrical conductivity of the films is predominantly influenced by the band gap energy and the precursor molarity. The measurement of the electrical conductivity of the films with correlation is equal to the experimental with the error is about 1% in the higher conductivity.展开更多
We investigated the structural and optical properties of ZnO thin films as an n-type semiconductor. The films were deposited at different precursor molarities using an ultrasonic spray method. In this paper we focused...We investigated the structural and optical properties of ZnO thin films as an n-type semiconductor. The films were deposited at different precursor molarities using an ultrasonic spray method. In this paper we focused our attention on a new approach describing a correlation between the crystallite size and optical gap energy with the precursor molarity of ZnO thin films. The results show that the X-ray diffraction （XRD） spectra revealed a preferred orientation of the crystallites along the c-axis. The maximum value of the crystallite size of the films is 63.99 nm obtained at 0.1 M. The films deposited with 0.1 M show lower absorption within the visible wavelength region. The optical gap energy increased from 3.08 to 3.37 eV with increasing precursor molarity of 0.05 to 0.1 M. The correlation between the structural and optical properties with the precursor molarity suggests that the crystallite size of the films is predominantly influenced by the band gap energy and the precursor molarity. The measurement of the crystallite size by the model proposed is equal to the experimental data. The minimum error value was estimated by Eq. （4） in the higher crystallinity.展开更多
The transparent conductive pure and doped zinc oxide thin films with aluminum, cobalt and indium were deposited by ultrasonic spray technique on glass substrate at 350 ℃. This paper is to present a new approach to th...The transparent conductive pure and doped zinc oxide thin films with aluminum, cobalt and indium were deposited by ultrasonic spray technique on glass substrate at 350 ℃. This paper is to present a new approach to the description of correlation between electrical conductivity and optical gap energy with dopants＇ concentration of A1, Co and In. The correlation between the electrical and optical properties with doping level suggests that the electrical conductivity of the films is predominantly estimated by the band gap energy and the concentrations of A1, Co and In. The measurement in the electrical conductivity of doped films with correlation is equal to the experimental value, the error of this correlation is smaller than 13%. The minimum error value was estimated in the cobalt-doped ZnO thin films. This result indicates that such Co-doped ZnO thin films are chemically purer and have far fewer defects and less disorder owing to an almost complete chemical decomposition.展开更多
文摘ZnO thin films were deposited using the simple, flexible and cost-effective spray ultrasonic technique at different precursor molarities values. The films were deposited on a glass substrate at 350℃. This paper is to present a new approach to the description of correlation between electrical conductivity and optical gap energy with precursor molarity of ZnO thin films. The ZnO films exhibit higher electrical n-type semiconductors, whose band gap energy increased from 3.08 to 3.37 eV with an increasing of precursor molarity of 0.05 to 0.1 M. The maximum value of electrical conductivity of the films is 7.96 （S2.cm）-1 obtained in the ZnO thin film for precursor molarity 0.125 M. The correlation between the electrical and the optical properties with the precursor molarity suggests that the electrical conductivity of the films is predominantly influenced by the band gap energy and the precursor molarity. The measurement of the electrical conductivity of the films with correlation is equal to the experimental with the error is about 1% in the higher conductivity.
文摘We investigated the structural and optical properties of ZnO thin films as an n-type semiconductor. The films were deposited at different precursor molarities using an ultrasonic spray method. In this paper we focused our attention on a new approach describing a correlation between the crystallite size and optical gap energy with the precursor molarity of ZnO thin films. The results show that the X-ray diffraction （XRD） spectra revealed a preferred orientation of the crystallites along the c-axis. The maximum value of the crystallite size of the films is 63.99 nm obtained at 0.1 M. The films deposited with 0.1 M show lower absorption within the visible wavelength region. The optical gap energy increased from 3.08 to 3.37 eV with increasing precursor molarity of 0.05 to 0.1 M. The correlation between the structural and optical properties with the precursor molarity suggests that the crystallite size of the films is predominantly influenced by the band gap energy and the precursor molarity. The measurement of the crystallite size by the model proposed is equal to the experimental data. The minimum error value was estimated by Eq. （4） in the higher crystallinity.
文摘The transparent conductive pure and doped zinc oxide thin films with aluminum, cobalt and indium were deposited by ultrasonic spray technique on glass substrate at 350 ℃. This paper is to present a new approach to the description of correlation between electrical conductivity and optical gap energy with dopants＇ concentration of A1, Co and In. The correlation between the electrical and optical properties with doping level suggests that the electrical conductivity of the films is predominantly estimated by the band gap energy and the concentrations of A1, Co and In. The measurement in the electrical conductivity of doped films with correlation is equal to the experimental value, the error of this correlation is smaller than 13%. The minimum error value was estimated in the cobalt-doped ZnO thin films. This result indicates that such Co-doped ZnO thin films are chemically purer and have far fewer defects and less disorder owing to an almost complete chemical decomposition.
