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Direct current hopping conductance in one-dimensional diagonal disordered systems
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作者 马松山 徐慧 +1 位作者 刘小良 肖剑荣 《Chinese Physics B》 SCIE EI CAS CSCD 2006年第1期190-194,共5页
Based on a tight-binding disordered model describing a single electron band, we establish a direct current (de) electronic hopping transport conductance model of one-dimensional diagonal disordered systems, and also... Based on a tight-binding disordered model describing a single electron band, we establish a direct current (de) electronic hopping transport conductance model of one-dimensional diagonal disordered systems, and also derive a dc conductance formula. By calculating the dc conductivity, the relationships between electric field and conductivity and between temperature and conductivity are analysed, and the role played by the degree of disorder in electronic transport is studied. The results indicate the conductivity of systems decreasing with the increase of the degree of disorder, characteristics of negative differential dependence of resistance on temperature at, low temperatures in diagonal disordered systems, and the conductivity of systems decreasing with the increase of electric field, featuring the non-Ohm's law conductivity. 展开更多
关键词 direct current hopping conductivity diagonal disordered systems the degree of disorder
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Engineering the emission of laser arrays to nullify the jamming from passive obstacles
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作者 CONSTANTINOS VALAGIANNOPOULOS VASSILIOS KOVANIS 《Photonics Research》 SCIE EI 2018年第8期I0001-I0008,共8页
Non-Hermitian characteristics accompany any photonic device incorporating spatial domains of gain and loss.In this work, a one-dimensional beam-forming array playing the role of the active part is disturbed from the s... Non-Hermitian characteristics accompany any photonic device incorporating spatial domains of gain and loss.In this work, a one-dimensional beam-forming array playing the role of the active part is disturbed from the scattering losses produced by an obstacle in its vicinity. It is found that the placement of the radiating elements leading to perfect beam shaping is practically not affected by the presence of that jammer. A trial-and-error inverse technique of identifying the features of the obstacle is presented based on the difference between the beam target pattern and the actual one. Such a difference is an analytic function of the position, size, and texture of the object,empowering the designer to find the feeding fields for the lasers giving a perfect beam forming. In this way, an optimal beam-shaping equilibrium is re-established by effectively cloaking the object and nullifying its jamming effect. 展开更多
关键词 光子器件 辐射原件 通讯技术 技术创新
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Low Temperature Growth of SWNTs on a Nickel Catalyst by Thermal Chemical Vapor Deposition
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作者 Maoshuai He Alexander I. Chernov +9 位作者 Elena D. Obraztsova Jani Sainio Emma Rikkinen Hua Jiang Zhen Zhu Antti Kaskela Albert G. Nasibulin Esko I. Kauppinen Marita Niemela Outi Krause 《Nano Research》 SCIE EI CAS CSCD 2011年第4期334-342,共9页
围单人赛的碳 nanotubes (SWNT ) 在支持硅石的一金属的镍(Ni ) 上被种了在温度从的催化剂象 450 一样低 ? 偅 ???  ???? 慮潮潣灭獯瑩獥吗??
关键词 单壁碳纳米管 镍催化剂 低温生长 热化学气相沉积 过渡金属催化剂 温度范围 吸收光谱 SWNTS
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