Direct current hopping conductance in one-dimensional diagonal disordered systems

Based on a tight-binding disordered model describing a single electron band, we establish a direct current （de） electronic hopping transport conductance model of one-dimensional diagonal disordered systems, and also derive a dc conductance formula. By calculating the dc conductivity, the relationships between electric field and conductivity and between temperature and conductivity are analysed, and the role played by the degree of disorder in electronic transport is studied. The results indicate the conductivity of systems decreasing with the increase of the degree of disorder, characteristics of negative differential dependence of resistance on temperature at, low temperatures in diagonal disordered systems, and the conductivity of systems decreasing with the increase of electric field, featuring the non-Ohm＇s law conductivity.

Low Temperature Growth of SWNTs on a Nickel Catalyst by Thermal Chemical Vapor Deposition

Single-walled carbon nanotubes （SWNTs） have been grown on a silica-supported monometallic nickel （Ni） catalyst at temperatures ranging from as low as 450℃to 800℃. Different spectroscopic techniques, such as Raman, photoluminescence emission （PLE）, and ultra violet-visible-near infrared （UV-vis-NIR） absorption spectroscopy were used to evaluate file diameter and quality of the SWNTs grown over the Ni catalyst at different temperatures. The analysis revealed that high quality SWNTs with a very narrow diameter distribution were obtained at a growth temperature of 500 ℃. In the PLE and absorption spectra, differences were observed between the SWNTs grown oil Ni and those grown on cobalt （Co）. This result expands the potential of growing a specific （n, m） tube species with relatively high abundance by tuning the catalyst composition. Furthermore, the prerequisites for the low temperature growth of SWNTs over a monometallic transition metal catalyst have been elucidated.

Engineering the emission of laser arrays to nullify the jamming from passive obstacles

Non-Hermitian characteristics accompany any photonic device incorporating spatial domains of gain and loss.In this work, a one-dimensional beam-forming array playing the role of the active part is disturbed from the scattering losses produced by an obstacle in its vicinity. It is found that the placement of the radiating elements leading to perfect beam shaping is practically not affected by the presence of that jammer. A trial-and-error inverse technique of identifying the features of the obstacle is presented based on the difference between the beam target pattern and the actual one. Such a difference is an analytic function of the position, size, and texture of the object,empowering the designer to find the feeding fields for the lasers giving a perfect beam forming. In this way, an optimal beam-shaping equilibrium is re-established by effectively cloaking the object and nullifying its jamming effect.