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Study on absorbance and laser damage threshold of HfO_2 films prepared by ion-assisted reaction deposition 被引量:12
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作者 张大伟 范树海 +5 位作者 高卫东 贺洪波 王英剑 邵建达 范正修 孙浩杰 《Chinese Optics Letters》 SCIE EI CAS CSCD 2004年第5期305-307,共3页
Using a new kind of EH1000 ion source, hafnium dioxide (HfO2) films are deposited with different deposition techniques and different conditions. The absorbance and the laser damage threshold of these films have been m... Using a new kind of EH1000 ion source, hafnium dioxide (HfO2) films are deposited with different deposition techniques and different conditions. The absorbance and the laser damage threshold of these films have been measured and studied. By comparing these characteristics, one can conclude that under right conditions, such as high partial pressure of oxygen and right kind of ion source, the ion-assisted reaction deposition can prepare HfO2 films with higher laser induced damage threshold. 展开更多
关键词 DEPOSITION OXIDES Partial pressure Thin films
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