We investigate the transverse mode pattern in GaN quantum-well （QW） laser diode （LD） by numerical calculation. We optimize the current GaN LD structure by varying the n-GaN layer thickness. The n-type GaN layer is...We investigate the transverse mode pattern in GaN quantum-well （QW） laser diode （LD） by numerical calculation. We optimize the current GaN LD structure by varying the n-GaN layer thickness. The n-type GaN layer is an important factor to determine the optical mode. Finally, we discuss the lasing performance of the GaN LD based on the transverse optical modes.展开更多
基金supported by the"973"Program of China(No.TG2007CB307004)the"863"Program of China(No.863-2006AA03A113)the National Natural Science Foundation of China(No.60276034,60577030,and 60607003).
文摘We investigate the transverse mode pattern in GaN quantum-well （QW） laser diode （LD） by numerical calculation. We optimize the current GaN LD structure by varying the n-GaN layer thickness. The n-type GaN layer is an important factor to determine the optical mode. Finally, we discuss the lasing performance of the GaN LD based on the transverse optical modes.
