According to the resonance transition between propagating surface plasmon and localized surface plasmon, we demonstrate a design of beam splitter that can split terahertz wave beams in a relatively broad frequency ran...According to the resonance transition between propagating surface plasmon and localized surface plasmon, we demonstrate a design of beam splitter that can split terahertz wave beams in a relatively broad frequency range. The transmission properties of the beam splitter are analyzed utilizing the finite element method. The resonance transition between two kinds of plasmons can be explained by a model of coherent electron cloud displacement.展开更多
Modulation properties of terahertz waves going through a light excited high resistivity silicon wafer are analyzed and measured. Free carrier lifetime of the silicon wafer affects the modulation depth and speed of the...Modulation properties of terahertz waves going through a light excited high resistivity silicon wafer are analyzed and measured. Free carrier lifetime of the silicon wafer affects the modulation depth and speed of the terahertz wave. The lifetime is reduced to less than 1 〉s by thermal processing for high speed modulation. Experimental results show that the response time and modulation depth of the proposed modulating structure are close to 1 〉s and 51%, respectively.展开更多
文摘According to the resonance transition between propagating surface plasmon and localized surface plasmon, we demonstrate a design of beam splitter that can split terahertz wave beams in a relatively broad frequency range. The transmission properties of the beam splitter are analyzed utilizing the finite element method. The resonance transition between two kinds of plasmons can be explained by a model of coherent electron cloud displacement.
基金the National Natural Science Foundation of China under Grant Nos.60671006 and 60971059
文摘Modulation properties of terahertz waves going through a light excited high resistivity silicon wafer are analyzed and measured. Free carrier lifetime of the silicon wafer affects the modulation depth and speed of the terahertz wave. The lifetime is reduced to less than 1 〉s by thermal processing for high speed modulation. Experimental results show that the response time and modulation depth of the proposed modulating structure are close to 1 〉s and 51%, respectively.
