For the frequency range of I kHz-lOMHz, the interface state density of Ni contacts on p-GaN is studied using capacitance-voltage （C-V） and conductance-frequency-voltage （G-f-V） measurements at room temperature. To...For the frequency range of I kHz-lOMHz, the interface state density of Ni contacts on p-GaN is studied using capacitance-voltage （C-V） and conductance-frequency-voltage （G-f-V） measurements at room temperature. To obtain the real capacitance and interface state density of the Ni/p-GaN structures, the effects of the series resistance （Rs） on high-frequency （SMHz） capacitance values measured at a reverse and a forward bias are investigated. The mean interface state densities obtained from the CHF-CLF capacitance and the conductance method are 2 ×1012 e V-1 cm-2 and 0.94 × 1012 eV-1 cm-2, respectively. Furthermore, the interface state density derived from the conductance method is higher than that reported from the Ni/n-GaN in the literature, which is ascribed to a poor crystal quality and to a large defect density of the Mg-doped p-GaN.展开更多
The effects of different masks and patterns on the top stripping of GaAs microwire arrays fabricated by inductively coupled plasma etching for 20min and 40min are investigated. The results show that the mask layer is ...The effects of different masks and patterns on the top stripping of GaAs microwire arrays fabricated by inductively coupled plasma etching for 20min and 40min are investigated. The results show that the mask layer is the main affect of the top stripping of the GaAs microwires in 40min. Increasing the mask layers and reducing the photoresist layers can prevent top stripping and result in a suitable GaAs microwire array.展开更多
To satisfy the requirements of high energy density,high power density,quick response and long lifespan for energy storage systems(ESSs),hybrid energy storage systems(HESSs)have been investigated for their complementar...To satisfy the requirements of high energy density,high power density,quick response and long lifespan for energy storage systems(ESSs),hybrid energy storage systems(HESSs)have been investigated for their complementary characteristics of‘high energy density components’and‘high power density components’.To optimize HESS combinations,related indices such as annual cost,fluctuation smoothing ability as well as safety and environmental impact have to be evaluated.The multiattribute utility method investigated in this paper is aimed to draw an overall conclusion for HESS allocation optimization in microgrid.Building on multi-attribute utility theory,this method has significant advantages in solving the incommensurability and contradiction among multiple attributes.Instead of determining the weights of various attributes subjectively,when adopting the multi-attribute utility method,the characteristics of attributes and the relation among them can be investigated objectively.Also,the proper utility function and merging rules are identified to achieve the aggregate utility which can reflect comprehensive qualities of HESSs.展开更多
基金Supported by the Natural Science Foundation of Jiangxi Province under Grant No 20133ACB20005the Key Program of National Natural Science Foundation of China under Grant No 41330318+3 种基金the Key Program of Science and Technology Research of Ministry of Education under Grant No NRE1515the Foundation of Training Academic and Technical Leaders for Main Majors of Jiangxi Province under Grant No 20142BCB22006the Research Foundation of Education Bureau of Jiangxi Province under Grant No GJJ14501the Engineering Research Center of Nuclear Technology Application(East China Institute of Technology)Ministry of Education under Grant NoHJSJYB2016-1
文摘For the frequency range of I kHz-lOMHz, the interface state density of Ni contacts on p-GaN is studied using capacitance-voltage （C-V） and conductance-frequency-voltage （G-f-V） measurements at room temperature. To obtain the real capacitance and interface state density of the Ni/p-GaN structures, the effects of the series resistance （Rs） on high-frequency （SMHz） capacitance values measured at a reverse and a forward bias are investigated. The mean interface state densities obtained from the CHF-CLF capacitance and the conductance method are 2 ×1012 e V-1 cm-2 and 0.94 × 1012 eV-1 cm-2, respectively. Furthermore, the interface state density derived from the conductance method is higher than that reported from the Ni/n-GaN in the literature, which is ascribed to a poor crystal quality and to a large defect density of the Mg-doped p-GaN.
基金Supported by the National Natural Science Foundation of China under Grant Nos 61261009 and 61067001the Key Program of Science and Technology Research of the Ministry of Education of China under Grant No 212090+1 种基金the Natural Science Foundation of Jiangxi Province under Grant No 20133ACB20005the Foundation of Training Academic and Technical Leaders for Main Majors of Jiangxi Province under Grant No 20142BCB22006
文摘The effects of different masks and patterns on the top stripping of GaAs microwire arrays fabricated by inductively coupled plasma etching for 20min and 40min are investigated. The results show that the mask layer is the main affect of the top stripping of the GaAs microwires in 40min. Increasing the mask layers and reducing the photoresist layers can prevent top stripping and result in a suitable GaAs microwire array.
基金supported by Science and Technology Foundation of State Grid Corporation of China (No.520940120036)the Key Project of the National Twelfth-Five Year Research Programme of China (No.2013BAA01B04)
文摘To satisfy the requirements of high energy density,high power density,quick response and long lifespan for energy storage systems(ESSs),hybrid energy storage systems(HESSs)have been investigated for their complementary characteristics of‘high energy density components’and‘high power density components’.To optimize HESS combinations,related indices such as annual cost,fluctuation smoothing ability as well as safety and environmental impact have to be evaluated.The multiattribute utility method investigated in this paper is aimed to draw an overall conclusion for HESS allocation optimization in microgrid.Building on multi-attribute utility theory,this method has significant advantages in solving the incommensurability and contradiction among multiple attributes.Instead of determining the weights of various attributes subjectively,when adopting the multi-attribute utility method,the characteristics of attributes and the relation among them can be investigated objectively.Also,the proper utility function and merging rules are identified to achieve the aggregate utility which can reflect comprehensive qualities of HESSs.
