An ensemble Monte Carlosimulation is used to compare high field electron transport in bulk InAs, InP and GaAs. In particular, velocity overshoot and electron transit times are examined. For all materials, we find that...An ensemble Monte Carlosimulation is used to compare high field electron transport in bulk InAs, InP and GaAs. In particular, velocity overshoot and electron transit times are examined. For all materials, we find that electron velocity overshoot only occurs when the electric field is increased to a value above a certain critical field, unique to each material. This critical field is strongly dependent on the material, about 3 kV/cm for InAs, 10 kV/cm for InP and 5 kV/cm for the case of GaAs, We find that InAs exhibits the highest peak overshoot velocity and that this velocity overshoot lasts over the longest distances when compared with GaAs and InP. Finally, we estimate the minimum transit time across a 1 μm InAs sample to be about 2 ps. Similar calculations for InP and GaAs yield 6.6 and 5.4 ps, respectively. We find that the optimal cutoff frequency for an ideal InAs based device ranges from around 79 GHz when the device thickness is set to 1 μm. We thus suggest that indium arsenide offers great promise for future high-speed device applications. The steady-state and transient velocity overshoot characteristics are in fair agreement with other recent calculations.展开更多
Algeria is a country of vast surface. It occupies a geographical situation which supports the development and the blooming of the use of solar energy. One of the most significant data to carry out an optimal dimension...Algeria is a country of vast surface. It occupies a geographical situation which supports the development and the blooming of the use of solar energy. One of the most significant data to carry out an optimal dimensioning ofa photovoltaic system, is the nature of the solar layer in the site of the establishment of the solar installation, especially the incidental solar energy received in the field of the photovoltaic modules, because this last is necessary for the estimation of the energy quantity delivered by the photovoltaic generator. The objective of this work is to predict the performance of a photovoltaic system （statement） functioning under the weather conditions and the simulation of incidental instantaneous energy on a sensor for the two sites： Tlemcen and Bouzareah. Our simulation is based on a model derived from the empirical models of P. De. Brichambaut and Kasten for a light blue sky, and the knowledge of this energy at every moment per a day or year allows the fine analysis of the collecting system. We established a general program of simulation of energy collected for the various orientations of collecting field of a photovoltaie system.展开更多
文摘An ensemble Monte Carlosimulation is used to compare high field electron transport in bulk InAs, InP and GaAs. In particular, velocity overshoot and electron transit times are examined. For all materials, we find that electron velocity overshoot only occurs when the electric field is increased to a value above a certain critical field, unique to each material. This critical field is strongly dependent on the material, about 3 kV/cm for InAs, 10 kV/cm for InP and 5 kV/cm for the case of GaAs, We find that InAs exhibits the highest peak overshoot velocity and that this velocity overshoot lasts over the longest distances when compared with GaAs and InP. Finally, we estimate the minimum transit time across a 1 μm InAs sample to be about 2 ps. Similar calculations for InP and GaAs yield 6.6 and 5.4 ps, respectively. We find that the optimal cutoff frequency for an ideal InAs based device ranges from around 79 GHz when the device thickness is set to 1 μm. We thus suggest that indium arsenide offers great promise for future high-speed device applications. The steady-state and transient velocity overshoot characteristics are in fair agreement with other recent calculations.
文摘Algeria is a country of vast surface. It occupies a geographical situation which supports the development and the blooming of the use of solar energy. One of the most significant data to carry out an optimal dimensioning ofa photovoltaic system, is the nature of the solar layer in the site of the establishment of the solar installation, especially the incidental solar energy received in the field of the photovoltaic modules, because this last is necessary for the estimation of the energy quantity delivered by the photovoltaic generator. The objective of this work is to predict the performance of a photovoltaic system （statement） functioning under the weather conditions and the simulation of incidental instantaneous energy on a sensor for the two sites： Tlemcen and Bouzareah. Our simulation is based on a model derived from the empirical models of P. De. Brichambaut and Kasten for a light blue sky, and the knowledge of this energy at every moment per a day or year allows the fine analysis of the collecting system. We established a general program of simulation of energy collected for the various orientations of collecting field of a photovoltaie system.
