Spin-wave structures whose current-voltage characteristics are controlled at room temperatures by magnetic field were produced with industrial technological methods using a spintronic europium-monoxide-based thin-film...Spin-wave structures whose current-voltage characteristics are controlled at room temperatures by magnetic field were produced with industrial technological methods using a spintronic europium-monoxide-based thin-film composite as an emitter and monocrystalline semiconductor n-GaAs as a collector. This shows that spin current transport actually exists and that a high-temperature spin transistor was produced with the use of the magnetic semiconductor/nonmagnetic semiconductor contact.展开更多
文摘Spin-wave structures whose current-voltage characteristics are controlled at room temperatures by magnetic field were produced with industrial technological methods using a spintronic europium-monoxide-based thin-film composite as an emitter and monocrystalline semiconductor n-GaAs as a collector. This shows that spin current transport actually exists and that a high-temperature spin transistor was produced with the use of the magnetic semiconductor/nonmagnetic semiconductor contact.
