Intensification of Power Quality Using PMSG and Cascaded Multi Cell Trans-Z-Source Inverter

This script depicts the power quality intensification of Wind Energy Transfer System (WETS) using Permanent Magnet Synchronous Generator (PMSG) and Cascaded Multi Cell Trans-Z-Source Inverter (CMCTZSI). The PMSG knocks the induction generator and earlier generators, because of their stimulating performances without taking the frame power. The Trans-Z-Source Inverter with one transformer and one capacitor is connected newly. To increase the boosting ratio gratuity a cascaded impression is proposed with adopting multi-winding transformer which provides an option for this manuscript to use coupled inductor as an alternative of multi-winding transformer and remains the matching voltage gain as cascaded multi cell trans-Z- source inverter. Accordingly the parallel capacitances are also balancing the voltage gain. The parallel correlation of the method is essentially to trim down the voltage stresses and to improve the input current gain of the inverter. By using MALAB Simulation, harmonics can be reduced up to 1.32% and also DC side can be boosted up our required level 200 - 1000 V achievable. The new hardware setup results demonstrate to facilitate the multi cell Trans Z-source inverter. This can be generated high-voltage gain [50 V - 1000 V] and also be credible. Moreover, the level of currents, voltages and Harmonics on the machinery is low.

Polarization and Breakdown Analysis of AlGaN Channel HEMTs with AlN Buffer

We have demonstrated the first carrier density model for AlGaN channel with AlN buffer using spontaneous and piezoelectric polarization comparison with experimental and theoretical results. From the results we proved that the formation of 2DEG in undoped structure relied both on spontaneous and piezoelectric polarization. The electron distribution of Al concentration (0 < x < 0.5) was measured for both AlGaN channel and barrier. Barrier thickness assumed between 20 and 25 nm for validating the experimental results. The carrier concentration was observed at the specific interface of the N- and Ga-face by assuming x1, x2 = 0. The model results are verified with previously reported experimental data.

Steadfast Energy Proficient Sensor Node Activation System in Wireless Networks Lifetime Enhancement

The wireless sensor network (WSN) is one of the budding exploring areas and fast rising fields in wireless communications. The sensor nodes in the network are generally small-size, low-cost, low-power and multi-function capabilities. Wireless sensor networks (WSNs) are used for various applications;since numerous sensor nodes are usually deployed on remote and inaccessible places, the employment and preservation should be easy and scalable. Sensor nodes in the field being run out of energy quickly has been an issue and many energy efficient routing protocols have been proposed to solve this problem and preserve the long life of the network. This paper work proposes a hierarchical based node activation routing technique which shows energy efficiency. This technique selects cluster head with highest residual energy in each communication round of transmission to the base station from the cluster heads. Hierarchical based node activation routing technique with different levels of hierarchy simulation results prolongs the lifetime of the network compared to other clustering schemes and communication rounds of simulation increase significantly.

Enhancing the Efficiency of Voice Controlled Wheelchairs Using NAM for Recognizing Partial Speech in Tamil

In this paper, we have presented an effective method for recognizing partial speech with the help of Non Audible Murmur (NAM) microphone which is robust against noise. NAM is a kind of soft murmur that is so weak that even people nearby the speaker cannot hear it. We can recognize this NAM from the mastoid of humans. It can be detected only with the help of a special type of microphone termed as NAM microphone. We can use this approach for impaired people who can hear sound but can speak only partial words (semi-mute) or incomplete words. We can record and recognize partial speech using NAM microphone. This approach can be used to solve problems for paralysed people who use voice controlled wheelchair which helps them to move around without the help of others. The present voice controlled wheelchair systems can recognize only fully spoken words and can’t recognise words spoken by semi-mute or partially speech impaired people. Further it uses normal microphone which hassevere degradation and external noise influence when used for recognizing partial speech inputs from impaired people. To overcome this problem, we can use NAM microphone along with Tamil Speech Recognition Engine (TSRE) to improve the accuracy of the results. The proposed method was designed and implemented in a wheelchair like model using Arduino microcontroller kit. Experimental results have shown that 80% accuracy can be obtained in this method and also proved that recognizing partially spoken words using NAM microphone was much efficient compared to the normal microphone.

An Efficient Framework for Indian Sign Language Recognition Using Wavelet Transform

Hand gesture recognition system is considered as a way for more intuitive and proficient human computer interaction tool. The range of applications includes virtual prototyping, sign language analysis and medical training. In this paper, an efficient Indian Sign Language Recognition System (ISLR) is proposed for deaf and dump people using hand gesture images. The proposed ISLR system is considered as a pattern recognition technique that has two important modules: feature extraction and classification. The joint use of Discrete Wavelet Transform (DWT) based feature extraction and nearest neighbour classifier is used to recognize the sign language. The experimental results show that the proposed hand gesture recognition system achieves maximum 99.23% classification accuracy while using cosine distance classifier.

Analysis of charge density and Fermi level of Al In Sb/In Sb single-gate high electron mobility transistor

A compact model is proposed to derive the charge density of the AlInSb/InSb HEMT devices by con- sidering the variation of Fermi level, the first subband, the second subband and sheet carrier charge density with applied gate voltage. The proposed model considers the Fermi level dependence of charge density and vice versa. The analytical results generated by the proposed model are compared and they agree well with the experimental results. The developed model can be used to implement a physics based compact model for an InSb HEMT device in SPICE applications.

Effect of underlap and gate length on device performance of an AlInN/GaN underlap MOSFET

We investigate the performance of an 18 nm gate length AIInN/GaN heterostructure underlap double gate MOSFET, using 2D Sentaurus TCAD simulation. The device uses lattice-matched wideband Al0.83In0.17N and narrowband GaN layers, along with high-k Al2O3 as the gate dielectric. The device has an ultrathin body and is designed according to the ITRS specifications. The simulation is done using the hydrodynamic model and interface traps are also considered. Due to the large two-dimensional electron gas （2DEG） density and high velocity, the maximal drain current density achieved is very high. Extensive device simulation of the major device performance metrics such as drain induced barrier lowering （DIBL）, subthreshold slope （SS）, delay, threshold voltage （Vt）, Ion/Ioff ratio and energy delay product have been done for a wide range of gate and underlap lengths. Encouraging results for delay, Ion, DIBL and energy delay product are obtained. The results indicate that there is a need to optimize theIoff and SS values for specific logic design. The proposed AlInN/GaN heterostructure underlap DG MOSFET shows excellent promise as one of the candidates to substitute currently used MOSFETs for future high speed applications.

A 2DEG charge density based drain current model for various Al and In molefraction mobility dependent nano-scale AlInGaN/AlN/GaN HEMT devices

We present a two-dimensional electron gas （2DEG） charge-control mobility variation based drain cur- rent model for sheet carrier density in the channel. The model was developed for the AIInGaN/A1N/GaN high- electron-mobility transistor. The sheet carrier density model used here accounts for the independence between the Fermi levels Ef and ns along with mobility for various AI and In molefractions. This physics based ns model fully depends upon the variation of El, u0, the first subband E0, the second subband El, and as. We present a physics based analytical drain current model using ns with the minimum set of parameters. The analytical resuks obtained are compared with the experimental results for four samples with various molefraction and barrier thickness. A good agreement between the results is obtained, thus validating the model.