With the development of new generation of information and communication technology,the Internet of Vehicles(IoV)/Vehicle-to-Everything(V2X),which realizes the connection between vehicle and X(i.e.,vehicles,pedestrians...With the development of new generation of information and communication technology,the Internet of Vehicles(IoV)/Vehicle-to-Everything(V2X),which realizes the connection between vehicle and X(i.e.,vehicles,pedestrians,infrastructures,clouds,etc.),is playing an increasingly important role in improving traffic operation efficiency and driving safety as well as enhancing the intelligence level of social traffic services.展开更多
This paper presents a brief overview of the Applied Centura?DPS?system,configured with silicon etch DPS II chamber, with emphasis on discussing tuning capability for CD uniformity control. It also presents the studies...This paper presents a brief overview of the Applied Centura?DPS?system,configured with silicon etch DPS II chamber, with emphasis on discussing tuning capability for CD uniformity control. It also presents the studies of etch process chemistry and film integration impact for an overall successful gate patterning development. Discussions will focus on resolutions to key issues, such as CD uniformity, line-edge roughness, and multilayer film etching integration.展开更多
Negative bias temperature instability(NBTI)in ultrathin-plasma-nitrided-oxide(PNO)based p-type metal-oxide-semiconductor field effect transistors(pMOSFETs)is investigated at temperatures ranging from 220 K to 470 K.It...Negative bias temperature instability(NBTI)in ultrathin-plasma-nitrided-oxide(PNO)based p-type metal-oxide-semiconductor field effect transistors(pMOSFETs)is investigated at temperatures ranging from 220 K to 470 K.It is found that the threshold voltage VT degradation below 290 K is dominated by the hole trapping process.Further studies unambiguously show that this process is unnecessarily related to nitrogen but the incorporation of nitrogen in the gate dielectric increases the probability of hole trapping in the NBTI process as it introduces extra trap states located in the upper half of the Si band gap.The possible hole trapping mechanism in NBTI stressed PNO pMOSFETs is suggested by taking account of oxygen and nitrogen related trap centers.展开更多
文摘With the development of new generation of information and communication technology,the Internet of Vehicles(IoV)/Vehicle-to-Everything(V2X),which realizes the connection between vehicle and X(i.e.,vehicles,pedestrians,infrastructures,clouds,etc.),is playing an increasingly important role in improving traffic operation efficiency and driving safety as well as enhancing the intelligence level of social traffic services.
文摘This paper presents a brief overview of the Applied Centura?DPS?system,configured with silicon etch DPS II chamber, with emphasis on discussing tuning capability for CD uniformity control. It also presents the studies of etch process chemistry and film integration impact for an overall successful gate patterning development. Discussions will focus on resolutions to key issues, such as CD uniformity, line-edge roughness, and multilayer film etching integration.
文摘Negative bias temperature instability(NBTI)in ultrathin-plasma-nitrided-oxide(PNO)based p-type metal-oxide-semiconductor field effect transistors(pMOSFETs)is investigated at temperatures ranging from 220 K to 470 K.It is found that the threshold voltage VT degradation below 290 K is dominated by the hole trapping process.Further studies unambiguously show that this process is unnecessarily related to nitrogen but the incorporation of nitrogen in the gate dielectric increases the probability of hole trapping in the NBTI process as it introduces extra trap states located in the upper half of the Si band gap.The possible hole trapping mechanism in NBTI stressed PNO pMOSFETs is suggested by taking account of oxygen and nitrogen related trap centers.
