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不同能量He离子注入单晶Si引起的损伤研究 被引量:1
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作者 刘昌龙 尹立军 +3 位作者 吕依颖 阮永丰 E.Ntsoenzok D.Alquier 《人工晶体学报》 EI CAS CSCD 北大核心 2005年第4期714-719,共6页
40、160和1550keV能量的He离子在室温下注入单晶Si样品到相同的剂量5×1016ions/cm2,采用透射电子显微镜(TEM)研究了800℃退火1h在Si中引起的损伤形貌。结果表明,三种能量的He离子注入Si并经高温退火均能产生空腔,但空腔的形貌、尺... 40、160和1550keV能量的He离子在室温下注入单晶Si样品到相同的剂量5×1016ions/cm2,采用透射电子显微镜(TEM)研究了800℃退火1h在Si中引起的损伤形貌。结果表明,三种能量的He离子注入Si并经高温退火均能产生空腔,但空腔的形貌、尺寸以及分布深度都依赖于离子的能量。结合TRIM程序计算结果对空腔和其它缺陷产生对He离子能量的依赖性进行了讨论。 展开更多
关键词 单晶Si He离子注入 高温退火 He空腔 透射电子显微镜
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Silicon Geiger mode avalanche photodiodes 被引量:1
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作者 M. Mazzillo G. Condorelli +14 位作者 D. Sanfilippo G. Fallica E. Sciacca S. Aurite S. Lombardo E. Rimini M. Belluso S. Billotta G. Bonanno A. Campisi L. Cosentino P. Finocchiaro F. Musumeci S. Privitera S. Tudisco 《Optoelectronics Letters》 EI 2007年第3期177-180,共4页
In this letter we present the results regarding the electrical and optical characterization of Geiger mode silicon avalanche photodiodes(GMAP) fabricated by silicon standard planar technology. Low dark count rates,neg... In this letter we present the results regarding the electrical and optical characterization of Geiger mode silicon avalanche photodiodes(GMAP) fabricated by silicon standard planar technology. Low dark count rates,negligible afterpulsing effects,good timing resolution and high quantum detection efficiency in all the visible range have been measured. The very good electro-optical performances of our photodiodes make them attractive for the fabrication of arrays with a large number of GMAP to be used both in the commercial and the scientific fields,as telecommunications and nuclear medical imaging. 展开更多
关键词 硅雪崩光电二极管 盖革模式 电学特性 光学特性
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不同碳化硅器件的直接比较
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作者 Bettina Rubino Michele Macauda +4 位作者 Massimo Nania Simion Buonome 张惠惠 周新田 穆辛 《电力电子》 2013年第3期46-49,32,共5页
本文介绍了意法半导体公司(STMicroelectronics)首次提出的1200V/20A的SiC MOSFET,并与1200V常闭型SiC JFET(结型场效应晶体管)和1200V SiC BJT(双极结型晶体管)作了对比。我们全面比较了三种开关器件工作在T=25℃、电流变化范围1A~7A... 本文介绍了意法半导体公司(STMicroelectronics)首次提出的1200V/20A的SiC MOSFET,并与1200V常闭型SiC JFET(结型场效应晶体管)和1200V SiC BJT(双极结型晶体管)作了对比。我们全面比较了三种开关器件工作在T=25℃、电流变化范围1A~7A的动态特性,并在T=125℃、I_D=7A条件下做了快速评估。尽管SiC MOSFET的比通态电阻(Ron*A)很高,但与另外两种器件相比仍被认为是最有前景的开关器件:SiC MOSFET的总动态损耗远远低于SiC BJT和常闭型SiC JFET,且驱动方案非常简单,因此在高频、高效功率转换领域中SiC MOSFET是最好的选择。 展开更多
关键词 SIC MOSFET SIC JFET SIC BJT
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利用高级MOSFET器件设计高效率开关模式电源 被引量:1
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作者 Filippo DiGiovanni 《电子产品世界》 2003年第22期44-46,共3页
关键词 MOSFET 肖特基 电源 准共振 高效率 器件设计
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STM32扩展软件简化物联网设备安全部署 被引量:1
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《今日电子》 2018年第6期72-72,共1页
通过在一个简便的STM32Cube扩展软件包内整合安全启动、安全固件更新和安全引擎服务,意法半导体的X-CUBE-SBSFUv.2.0能帮助产品开发人员充分利用STM32微控制器的安全功能保护物联网终端等联网设备的数据安全、管理生命周期.
关键词 设备安全 物联网 软件包 部署 意法半导体 安全启动 安全引擎 固件更新
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显示驱动性能改进引领单扫描等离子显示技术
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作者 Eric Cirot Jean-Raphael Bezal 姜晓鹏 《现代显示》 2007年第6期32-35,共4页
等离子体驱动技术的最新进展,使扫描技术的开发成为可能。此文中将这种新驱动技术同双驱动技术作了比较。集中介绍了意法半导体的最新驱动特性,包括恒定上升斜率和展频分散技术的使用,以及新的能量回收技术。
关键词 单扫描 恒定上升斜率 展频分散 能量回收
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An Active Inrush Current Limiter Based on SCR Phase Shift Control for EV Charging Systems 被引量:1
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作者 Cedric Reymond Sebastien Jacques +1 位作者 Ghafour Benabdelaziz Jean-Charles Lebunetel 《Journal of Energy and Power Engineering》 2016年第4期247-257,共11页
This article gives an overview of the main passive solutions and active techniques, based on AC switches to limit inrush currents in medium power AC-DC converters (up to 3.7 kW) for electric vehicle charging systems... This article gives an overview of the main passive solutions and active techniques, based on AC switches to limit inrush currents in medium power AC-DC converters (up to 3.7 kW) for electric vehicle charging systems. In particular, a strategy, based on SCR (silicon controlled rectifier) phase, shift control in a mixed rectifier bridge with diodes and thyristors, is proposed. The challenge is to help designers optimize the triggering delay of SCRs to both limit the peak value of inrush current spikes and optimize the charge duration of the DC-link capacitor. A mathematical model (Mathcad engineering tool) has been defined to point out, the interest of a variable triggering delay to control SCRs to meet the expectations described previously. Experimental measurements using an industrial evaluation board of the AC-DC converter demonstrate the robustness of the method. 展开更多
关键词 EV charger AC-DC converter inrush current limiter SCR phase shift control.
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20nm高介电常数金属栅极缺陷减少技术 被引量:1
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作者 Vincent Charbois Julie Lebreton +5 位作者 Mylène Savoye Eric Labonne Antoine Labourier Benjamin Dumont Chet Lenox Mike von Den Hof 《电子工业专用设备》 2017年第1期8-13,共6页
介绍了20 nm平面技术生产线前端缺陷减少的方法、结果及改善。介绍的缺陷检测优化与缺陷减少方法是针对高性能逻辑器件所用的300 mm晶圆上的高介电常数金属栅极(HKMG)层叠模块而实施的。
关键词 缺陷检测与减少(DI) 成品率改善/学习(YE)
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A Smart Procedure for the Femtosecond Laser-Based Fabrication of a Polymeric Lab-on-a-Chip for Capturing Tumor Cell
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作者 Annalisa Volpe Udith Krishnan +3 位作者 Maria Serena Chiriacò Elisabetta Primiceri Antonio Ancona Francesco Ferrara 《Engineering》 SCIE EI 2021年第10期1434-1440,共7页
Rapid prototyping methods for the design and fabrication of polymeric labs-on-a-chip are on the rise,as they allow high degrees of precision and flexibility.For example,a microfluidic platform may require an optimizat... Rapid prototyping methods for the design and fabrication of polymeric labs-on-a-chip are on the rise,as they allow high degrees of precision and flexibility.For example,a microfluidic platform may require an optimization phase in which it could be necessary to continuously modify the architecture and geometry;however,this is only possible if easy,controllable fabrication methods and low-cost materials are available.In this paper,we describe the realization process of a microfluidic tool,from the computer-aided design(CAD)to the proof-of-concept application as a capture device for circulating tumor cells(CTCs).The entire platform was realized in polymethyl methacrylate(PMMA),combining femtosecond(fs)laser and micromilling fabrication technologies.The multilayer device was assembled through a facile and low-cost solvent-assisted method.A serpentine microchannel was then directly biofunctionalized by immobilizing capture probes able to distinguish cancer from non-cancer cells without labeling.The low material costs,customizable methods,and biological application of the realized platform make it a suitable model for industrial exploitation and applications at the point of care. 展开更多
关键词 LAB-ON-A-CHIP Fs laser Circulating tumor cells Point of care Thermal bonding POLYMERS
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Light emitting devices based on Si nanoclusters:the integration with a photonic crystal and electroluminescence properties
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作者 Alessia Irrera Fabio Iacona +6 位作者 Giorgia Franzò Andrea Canino Delfo Sanfilippo Gianfranco Di Stefano Angelo Piana Pier Giorgio Fallica Francesco Priolo 《Optoelectronics Letters》 EI 2007年第5期321-325,共5页
We present the properties and potentialities of light emitting devices based on amorphous Si nanoclusters. Amorphousnanostructures may constitute an interesting alternative to Si nanocrystals for the monolithic integr... We present the properties and potentialities of light emitting devices based on amorphous Si nanoclusters. Amorphousnanostructures may constitute an interesting alternative to Si nanocrystals for the monolithic integration of optical andelectrical functions in Si technology. In fact, they exhibit an intense room temperature electroluminescence (EL). The ELproperties of these devices have been studied as a function of current and of temperature. Moreover, to improve theextraction efficiency of the light, we have integrated the emitting system with a 2D photonic crystal structure opportunelyfabricated by using conventional optical lithography to reduce the total internal reflection of the emitted light. The extractionefficiency in such devices increases by a factor of 4 at a resonance wavelength. 展开更多
关键词 发光装置 纳米聚类 光子晶体 集成电路
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Effects of A Top SiO2 Surface Layer on Cavity Formation and Helium Desorption in Silicon
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作者 Liu Changlong Yin Lijun Lü Yiying Alquier D 《Journal of Rare Earths》 SCIE EI CAS CSCD 2006年第z1期78-82,共5页
Cz n-type Si (100) samples with and without a top SiO2 layer were implanted with 40 keV helium ions at the same dose of 5×1016 cm-2. Cross-sectional transmission electron microscopy (XTEM) and thermal desorption ... Cz n-type Si (100) samples with and without a top SiO2 layer were implanted with 40 keV helium ions at the same dose of 5×1016 cm-2. Cross-sectional transmission electron microscopy (XTEM) and thermal desorption spectroscopy (THDS) were used to study the thermal evolution of cavities upon and helium thermal release, respectively. XTEM results show that the presence of the top SiO2 layer could suppress the thermal growth of cavities mainly formed in the region close to the SiO2/Si interface, which leads to the reduction in both the cavity band and cavity density. THDS results reveal that the top oxide layer could act as an effective barrier for the migration of helium atoms to the surface, and it thus gives rise to the formation of more overpresurrized bubbles and to the occurrence of a third release peak located at about 1100 K. The results were qualitively discussed by considering the role of the oxide surface layer in defect migration and evolution upon annealing. 展开更多
关键词 silicon SIO2 layer HELIUM IMPLANTATION CAVITIES HELIUM release
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Three-Points Modulator Based on DPLL for Wideband Polar Modulation
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作者 Julien Kieffer +4 位作者 bastien Rieubon Marc Houdebine bastien Dedieu Emil Novakov 《Communications and Network》 2013年第3期140-143,共4页
We present a nonlinear event-driven model of a Digital PLL used in the context of a polar modulation. This modeling has shown that the estimation method of the TDC gain has a big impact on the EVM for wideband modulat... We present a nonlinear event-driven model of a Digital PLL used in the context of a polar modulation. This modeling has shown that the estimation method of the TDC gain has a big impact on the EVM for wideband modulation and a solution has been proposed which consists to add the modulation on the gain after calibration of the gain offset. This transforms the classical two-points modulator into a three-points modulator. This implementation has been validated for WCDMA standard. 展开更多
关键词 DPLL POLAR Modulation WCDMA TDC
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亮度可调的高效LED驱动器
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作者 Fabio Cacciotto Giuseppe Di Stefano 《电子产品世界》 2005年第11A期I0021-I0022,共2页
关键词 LED驱动器 可调 亮度 系统性能 使用寿命 维修成本 照明技术 控制技术 低压操作 照明灯
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Some Tools to Model Ground or Supply Bounces Induced in and out of Heterogeneous Integrated Circuits
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作者 Christian Gontrand Olivier Valorge +4 位作者 Rabah Dahmanil Fengyuan Sun Francis Calmon Jacques Verdier Paul Dautriche 《Computer Technology and Application》 2011年第10期788-800,共13页
Electrical ground looks simple on a schematic; unfortunately, the actual performance of a circuit is dictated by its layout (and by its printed-circuit-board). When the ground node moves, system performance suffers ... Electrical ground looks simple on a schematic; unfortunately, the actual performance of a circuit is dictated by its layout (and by its printed-circuit-board). When the ground node moves, system performance suffers and the system radiates electromagnetic interferences. But the understanding of the physics of ground noise can provide an intuitive sense for reducing the problem. Ground bounce can produce transients with amplitudes of volts; most often changing magnetic flux is the cause; in this work, the authors use a Finite-Difference Time-Domain to begin to understand such phenomena. Additionally, predicting substrate cross-talks in mixed-signal circuits has become a critical issue to preserve signal integrity in future integrated systems. Phenomena that involve parasitic signal propagation into the substrate are discussed. A simple methodology to predict the substrate cross-talk and some associated tools are presented. Finally, the authors indicate a stochastic method which could grasp both outer or inner RF (Radio-Frequency) radiations and substrate parasites. 展开更多
关键词 Electromagnetism 3D (three-dimensional) integration noise TSV (through silicon vias) ground or supply bounce mixed analog-digital integrated circuits substrate noise stochastic methodology.
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Elimination of ESD Events and Optimizing Waterjet Deflash Process for Reduction of Leakage Current Failures on QFN-mr Leadframe Devices
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作者 Frederick Ray I.Gomez Tito T.Mangaoang Jr. 《Journal of Electrical Engineering》 2018年第4期238-243,共6页
This technical paper presents the resolution of high leakage current failures on QFN-mr (Quad-Flat No-leads Multi-Row) LF (leadframe) devices by optimizing the waterjet deflash process and eliminating the ESD (el... This technical paper presents the resolution of high leakage current failures on QFN-mr (Quad-Flat No-leads Multi-Row) LF (leadframe) devices by optimizing the waterjet deflash process and eliminating the ESD (electrostatic discharge) events. ESD damage to units can cause permanent or latent product failures which results in low final test yield, and worse, possible external customer complaints. The use of CO2 (carbon dioxide) bubbler was able to reduce the DI (deionized) water’s equivalent resistivity from 17 M? to 0.30 M?, minimizing the tribocharging effect produced during the waterjet deflash process. Moreover, ESD events were eliminated by grounding the floating assembly equipment parts and installing appropriate ESD controls. It is of high importance to reduce or eliminate the leakage current failures to ensure the product quality, especially as the market becomes more demanding. After the optimization and implementation of the corrective and improvement actions, high leakage current occurrence was significantly reduced from baseline of 5,784 ppm to 20 ppm. 展开更多
关键词 Leakage current failure ESD QFN-mr LF waterjet deflash process.
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电源系统的后调节和整理电路
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作者 Robert Liou 《电子产品世界》 2000年第11期43-43,共1页
关键词 电源系统 调节电路 整理电路
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A Fundamental Approach for Design and Optimization of a Spiral Inductor
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作者 Frederick Ray I.Gomez 《Journal of Electrical Engineering》 2018年第5期256-260,共5页
This technical paper presents a fundamental approach for design and optimization of a spiral inductor using ASITIC(analysis and simulation of spiral inductors and transformers for ICs)and SpiralCalc(integrated spiral ... This technical paper presents a fundamental approach for design and optimization of a spiral inductor using ASITIC(analysis and simulation of spiral inductors and transformers for ICs)and SpiralCalc(integrated spiral inductor calculator).Both tools are available for research and non-commercial purposes.Inductors are key components esp.for impedance matching and are designed such that they would exhibit a high Q-factor(quality-factor)for the specific inductance and frequency range of operation.A sample value of 5.3 nH is set for this paper for the spiral inductor design using the tools.For optimum Q-factor,an octagonal geometry for spiral inductor is used for ASITIC design,to have a close comparison to that of the SpiralCalc.Design methodologies for the optimization of the spiral inductor parameters such as the inductance and the Q-factor are discussed.Results comparison between the two tools is also presented.Design tradeoffs between inductor parameters are inevitable,and these parameters affect the performance of the inductor esp.at higher frequencies.With this,it is crucial that inductors be designed carefully for their effective frequency range of operation and specific requirements of the intended application. 展开更多
关键词 SPIRAL INDUCTOR Q-factor INDUCTANCE
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智能可编程电表芯片
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《今日电子》 2005年第8期101-101,共1页
STPM01的主要模块包括模拟信号调节、2个模数转换器:1个硬连线的DSP、1个连接外部单片机的SPI接口、1个用于调校配置芯片的56位OTP(一次性可编程)块、1个电压频率转换器和2个限流低压降稳压器。可配置的模拟前端使该芯片兼容各种电... STPM01的主要模块包括模拟信号调节、2个模数转换器:1个硬连线的DSP、1个连接外部单片机的SPI接口、1个用于调校配置芯片的56位OTP(一次性可编程)块、1个电压频率转换器和2个限流低压降稳压器。可配置的模拟前端使该芯片兼容各种电流传感器,电表专用的DSP采用创新算法,能够实时计算有功、无功和视在功率、RMS电压及电流和线路频率。 展开更多
关键词 可编程 芯片 电表 电压频率转换器 电流传感器 智能 低压降稳压器 模拟前端 模数转换器
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LTC6081/82:3.5MHz CMOS放大器
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《世界电子元器件》 2007年第11期66-66,共1页
Uneor推出CMOS运算放大器LTC6081和LTC6082,这两款器件在-40℃至+125℃的整个温度范围内具有3.5MHz的增益带宽和低于90μV的偏移。双路LTC6081和四路LTC6082具有轨至轨输入和输出级,实现了仅为1.3μVp-p的低频噪声以及在25℃时最大... Uneor推出CMOS运算放大器LTC6081和LTC6082,这两款器件在-40℃至+125℃的整个温度范围内具有3.5MHz的增益带宽和低于90μV的偏移。双路LTC6081和四路LTC6082具有轨至轨输入和输出级,实现了仅为1.3μVp-p的低频噪声以及在25℃时最大为1pA的低输入偏置电流,非常适用于精密仪器。 展开更多
关键词 CMOS放大器 CMOS运算放大器 温度范围 偏置电流 低频噪声 精密仪器 带宽和 输出级
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内置DSP的处理器系统级芯片
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《今日电子》 2005年第8期105-105,共1页
STW22000在STW21000的基础上增加了一个600MHz16/32位双MACDSP核心,集成了300MHZARM926EJ-SRISC核心、16Mb嵌入式DRAM、eFPGA模块、可重新配置接口以及各种模拟数字外设,如模数和数模转换器。新增加的ST122DSP整合了VLIW和RISC的特... STW22000在STW21000的基础上增加了一个600MHz16/32位双MACDSP核心,集成了300MHZARM926EJ-SRISC核心、16Mb嵌入式DRAM、eFPGA模块、可重新配置接口以及各种模拟数字外设,如模数和数模转换器。新增加的ST122DSP整合了VLIW和RISC的特性,还嵌入一个专用CDE(卷积解码引擎)。 展开更多
关键词 系统级芯片 嵌入式DRAM 处理器 DSP RISC核 内置 FPGA模块 数模转换器 16Mb
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