The rapid development of ultralarge-scale integration demands integrated devices from ordinary 1-dimensional integrated devices to 3-dimensional devices and multi-function devices. Because of its non-volatility and ra...The rapid development of ultralarge-scale integration demands integrated devices from ordinary 1-dimensional integrated devices to 3-dimensional devices and multi-function devices. Because of its non-volatility and radiation-hardness, very large (～1000) dielectric constant and polarizability, ferroelectric thin film and its application research have recently attracted great attention in newly functional materials and integrated devices such展开更多
基金Research performed under the auspices of the Natural Scientific Foundation of Shanghai
文摘The rapid development of ultralarge-scale integration demands integrated devices from ordinary 1-dimensional integrated devices to 3-dimensional devices and multi-function devices. Because of its non-volatility and radiation-hardness, very large (～1000) dielectric constant and polarizability, ferroelectric thin film and its application research have recently attracted great attention in newly functional materials and integrated devices such
