The Roadmap of 2D Materials and Devices Toward Chips

Due to the constraints imposed by physical effects and performance degra certain limitations in sustaining the advancement of Moore’s law.Two-dimensional(2D)materials have emerged as highly promising candidates for the post-Moore era,offering significant potential in domains such as integrated circuits and next-generation computing.Here,in this review,the progress of 2D semiconductors in process engineering and various electronic applications are summarized.A careful introduction of material synthesis,transistor engineering focused on device configuration,dielectric engineering,contact engineering,and material integration are given first.Then 2D transistors for certain electronic applications including digital and analog circuits,heterogeneous integration chips,and sensing circuits are discussed.Moreover,several promising applications(artificial intelligence chips and quantum chips)based on specific mechanism devices are introduced.Finally,the challenges for 2D materials encountered in achieving circuit-level or system-level applications are analyzed,and potential development pathways or roadmaps are further speculated and outlooked.

Investigation of performance-enhanced GaN-based E-mode pchannel MOSFET with pre-ohmic-annealing treatment

Pre-ohmic-annealing(POA)treatment of P-GaN/AlN/AlGaN epitaxy under N_(2)atmosphere was demonstrated to effectively achieve good p-type ohmic contact as well as decreased epitaxy sheet resistance.Ohmic contact resistance(Rc)extracted by transfer length method reduced from 38 to 23Ω·mm with alleviated contact barrier height from 0.55 to 0.51 eV after POA treatment.X-ray photoelectron spectroscopy and Hall measurement confirmed that POA treatment was able to reduce surface state density and improve the hole concentration of p-GaN.Due to the decreased Rc and improved two-dimensional hole gas(2DHG)density,an outstanding-performance GaN E-mode p-channel MOSFET was successfully realized.

Physical mechanism of oxygen diffusion in the formation of Ga_(2)O_(3) Ohmic contacts

The formation of low-resistance Ohmic contacts in Ga_(2)O_(3) is crucial for high-performance electronic devices. Conventionally, a titanium/gold(Ti/Au) electrode is rapidly annealed to achieve Ohmic contacts, resulting in mutual diffusion of atoms at the interface. However, the specific role of diffusing elements in Ohmic contact formation remains unclear.In this work, we investigate the contribution of oxygen atom diffusion to the formation of Ohmic contacts in Ga_(2)O_(3). We prepare a Ti/Au electrode on a single crystal substrate and conduct a series of electrical and structural characterizations.Using density functional theory, we construct a model of the interface and calculate the charge density, partial density of states, planar electrostatic potential energy, and I–V characteristics. Our results demonstrate that the oxygen atom diffusion effectively reduces the interface barrier, leading to low-resistance Ohmic contacts in Ga_(2)O_(3). These findings provide valuable insights into the underlying mechanisms of Ohmic contact formation and highlight the importance of considering the oxygen atom diffusion in the design of Ga_(2)O_(3)-based electronic devices.

Strain-tuned electronic and valley-related properties in Janus monolayers of SWSiX_(2)(X=N,P,As)

Exploring novel two-dimensional(2D)valleytronic materials has an essential impact on the design of spintronic and valleytronic devices.Our first principles calculation results reveal that the Janus SWSiX_(2)(X=N,P,As)monolayer has excellent dynamical and thermal stability.Owing to strong spin–orbit coupling(SOC),the SWSiX_(2)monolayer exhibits a valence band spin splitting of up to 0.49 eV,making it promising 2D semiconductor for valleytronic applications.The opposite Berry curvatures and optical selection rules lead to the coexistence of valley and spin Hall effects in the SWSiX2 monolayer.Moreover,the optical transition energies can be remarkably modulated by the in-plane strains.Large tensile(compressive)in-plane strains can achieve spin flipping in the SWSiN2 monolayer,and induce both SWSiP_(2)and SWSiAs_(2)monolayers transit from semiconductor to metal.Our research provides new 2D semiconductor candidates for designing high-performance valleytronic devices.

Optimized numerical density functional theory calculation of rotationally symmetric jellium model systems

In real space density functional theory calculations,the effective potential depends on the electron density,requiring self-consistent iterations,and numerous integrals at each step,making the process time-consuming.In our research,we propose an optimization method to expedite density functional theory(DFT)calculations for systems with large aspect ratios,such as metallic nanorods,nanowires,or scanning tunneling microscope tips.This method focuses on employing basis set to expand the electron density,Coulomb potential,and exchange-correlation potential.By precomputing integrals and caching redundant results,this expansion streamlines the integration process,significantly accelerating DFT computations.As a case study,we have applied this optimization to metallic nanorod systems of various radii and lengths,obtaining corresponding ground-state electron densities and potentials.

Emission and capture characteristics of deep hole trap in n-GaN by optical deep level transient spectroscopy

Emission and capture characteristics of a deep hole trap(H1)in n-GaN Schottky barrier diodes(SBDs)have been investigated by optical deep level transient spectroscopy(ODLTS).Activation energy(Eemi)and capture cross-section(σ_(p))of H1 are determined to be 0.75 eV and 4.67×10^(−15)cm^(2),respectively.Distribution of apparent trap concentration in space charge region is demonstrated.Temperature-enhanced emission process is revealed by decrease of emission time constant.Electricfield-boosted trap emission kinetics are analyzed by the Poole−Frenkel emission(PFE)model.In addition,H1 shows point defect capture properties and temperature-enhanced capture kinetics.Taking both hole capture and emission processes into account during laser beam incidence,H1 features a trap concentration of 2.67×10^(15)cm^(−3).The method and obtained results may facilitate understanding of minority carrier trap properties in wide bandgap semiconductor material and can be applied for device reliability assessment.

Performance of Lateral 4H-SiC Photoconductive Semiconductor Switches by Extrinsic Backside Trigger

Photoconductive semiconductor switch(PCSS)can be applied in pulsed high power systems and microwave techniques.However,reducing the damage and increasing the lifetime of silicon carbide(SiC)PCSS are still faced severe challenges.In this study,PCSSs with various structures were prepared on 4-inch diameter,500μm thick high-purity semi-insulating 4H-SiC substrates and their on-state resistance and damage mechanisms were investigated.It was found that the PCSS of an Au/TiW/Ni electrode system annealed at 950℃had a minimum on-state resistance of 6.0Ωat 1 kV bias voltage with a 532 nm and 170 mJ pulsed laser by backside illumination single trigger.The backside illumination single trigger could reduce on-state resistance and alleviate the damage of PCSS compared to the frontside trigger when the diameter of the laser spot was larger than the channel length of PCSS.For the 200 s trigger test by a 10 Hz laser,the black branch-like ablation on Au/TiW/Ni PCSS was mainly caused by thermal stress owing to hot carriers.Replacing metal Ni with boron gallium co-doped zinc oxide(BGZO)thin films annealed at 400℃,black branch-like ablation was alleviated while concentric arc damage was obvious at the anode.The major causes of concentric arc are both pulsed laser diffraction and thermal effect.

Radiation Spectral Analysis of 3D Dust Molecular Clusters(PAHs)and Peptoids under Ionization and Electric Field in ISM

Polycyclic aromatic hydrocarbons(PAHs),PANHs,and peptoids dust spectral calculations from the interstellar medium(ISM)are important for dust observations and theory.Our goal is to calculate the radiation spectrum of spherical PAHs dust clusters in a vacuum containing ionized and applied in the presence of an electric field.We propose a new simple computational model to calculate the size of three-dimensional spherical dust clusters formed by different initial dust structures.By the Vienna Ab-initio Simulation Package code,the density functional theory with the generalized approximation was used to calculate the electron density gradient and obtain the radiation spectrum of dust.When the radius of spherical dust clusters is~[0.009-0.042]μm,the dust radiation spectrum agrees well with the Z=0.02 mMMP stellar spectra,and the PAHs radiation spectrum of NGC 4676 at wavelengths of(0-5]μm and(5-10]μm,respectively.In the ionized state,the N-PAH,C_(10)H_(9)N,2(C_(4)H_(4))^(1+),and peptoids 4(CHON),(C_(8)H_(10)N_(2)O_(5))^(1+)dust clusters at 3.3μm,while the 2(C_(22)H_(21)N_(3)O_(2))^(1+),4(CHON)dust clusters at 5.2μm have obvious peaks.There is a characteristic of part of PAHs and peptoids clusters radiation at the nearinfrared wavelength of 2μm.However,especially after applying an electric field to the dust,the emission spectrum of the dust increases significantly in the radiation wavelength range[3-10]μm.Consequently,the dust clusters of PAHs,PANHs,and peptoids of the radius size~[0.009-0.042]μm are likely to exist in the ISM.

Sensitivity investigation of 100-MeV proton irradiation to SiGe HBT single event effect

The single event effect(SEE) sensitivity of silicon–germanium heterojunction bipolar transistor(Si Ge HBT) irradiated by 100-Me V proton is investigated. The simulation results indicate that the most sensitive position of the Si Ge HBT device is the emitter center, where the protons pass through the larger collector-substrate(CS) junction. Furthermore, in this work the experimental studies are also carried out by using 100-Me V proton. In order to consider the influence of temperature on SEE, both simulation and experiment are conducted at a temperature of 93 K. At a cryogenic temperature, the carrier mobility increases, which leads to higher transient current peaks, but the duration of the current decreases significantly.Notably, at the same proton flux, there is only one single event transient(SET) that occurs at 93 K. Thus, the radiation hard ability of the device increases at cryogenic temperatures. The simulation results are found to be qualitatively consistent with the experimental results of 100-Me V protons. To further evaluate the tolerance of the device, the influence of proton on Si Ge HBT after gamma-ray(^(60)Coγ) irradiation is investigated. As a result, as the cumulative dose increases, the introduction of traps results in a significant reduction in both the peak value and duration of the transient currents.

Step-edge-guided nucleation and growth mode transition of α-Ga_(2)O_(3) heteroepitaxy on vicinal sapphire

Controlling the epitaxial growth mode of semiconductor layers is crucial for optimizing material properties and device performance.In this work,the growth mode ofα-Ga_(2)O_(3) heteroepitaxial layers was modulated by tuning miscut angles(θ)from 0°to 7°off the(1010)direction of sapphire(0002)substrate.On flat sapphire surfaces,the growth undergoes a typical three-dimensional(3D)growth mode due to the random nucleation on wide substrate terraces,as evidenced by the hillock morphology and high dislocation densities.As the miscut angle increases toθ=5°,the terrace width of sapphire substrate is comparable to the distance between neighboring nuclei,and consequently,the nucleation is guided by terrace edges,which energetically facilitates the growth mode transition into the desirable two-dimensional(2D)coherent growth.Consequently,the mean surface roughness decreases to only 0.62 nm,accompanied by a significant reduction in screw and edge dislocations to 0.16×10^(7) cm^(-2)and 3.58×10^(9) cm^(-2),respectively.However,the further increment of miscut angles toθ=7°shrink the terrace width less than nucleation distance,and the step-bunching growth mode is dominant.In this circumstance,the misfit strain is released in the initial growth stage,resulting in surface morphology degradation and increased dislocation densities.

Preparation and Photostriction Properties of BiFeO_(3)-BaTiO_(3)Ceramics

Under illumination by 405,520 and 655 nm monochromatic visible light(light intensity of 30 kW/m^(2)),large photostriction(ΔL/L)of 0.19%,0.13%and 0.26%for 67BiFeO_(3)-33BaTiO_(3)(67BF-33BT)lead-free ferroelectric ceramics are obtained,respectively.By studying the ferroelectric and photoelectric properties in conjunction with in situ Raman spectroscopy,it is found that the photostrictive effect of 67BF-33BT is not caused by the electrical strain induced by abnormal photovoltaic voltage,but related to the optical induced oxygen octahedral distortion.The 67BF-33BT lead-free ferroelectric material with excellent photostrictive response in the visible light region is expected to play an important role in the field of optical drive electromechanical devices.

Enhancing efficiency and stability of organic solar cells through a simplified four-step synthesis of fully non-fused ring electron acceptor

Design and synthesis of superior cost-effective non-fullerene acceptors(NFAs)are still big challenges for facilitating the commercialization of organic solar cells(OSCs),yet to be realized.Herein,two medium bandgap fully non-fused ring electron acceptors(NFREAs,medium bandgap,i,e.,1,3-1,8 eV),namely PTR-2Cl and PTR-4Cl are synthesized with only four steps by using intramolecular noncovalent interaction central core,structured alkyl side chain orientation linking units and flanking with different electron-withdrawing end group.Among them,PTR-4C1 exhibits increased average electrostatic potential(ESP)difference with polymer donor,enhanced crystallinity and compactπ-πstacking compared with the control molecule PTR-2CI.As a result,the PTR-4Cl-based OSC achieved an impressive power conversion efficiency(PCE)of 14.72%,with a much higher open-circuit voltage(V_(OC))of 0.953 V and significantly improved fill factor(FF)of 0.758,demonstrating one of the best acceptor material in the top-performing fully NFREA-based OSCs with both high PCE and V_(OC).Notably,PTR-4Cl-based cells maintain a good T_80lifetime of its initial PCE after over 936 h under a continuous thermal annealing treatment and over1300 h T_(80)lifetime without encapsulation.This work provides a cost-effective design strategy for NFREAs on obtaining high V_(OC),efficient exciton dissociation,and ordered molecular packing and thus high-efficiency and stable OSCs.

Model of self-generated magnetic field generation from relativistic laser interaction with solid targets

Generation of self-generated annular magnetic fields at the rear side of a solid target driven by relativistic laser pulse is investigated by using theoretical analysis and particle-in-cell simulations.The spatial strength distribution of magnetic fields can be accurately predicted by calculating the net flow caused by the superposition of source flow and return flow of hot electrons.The theoretical model established shows good agreement with the simulation results,indicating that the magnetic-field strength scales positively to the temperature of hot electrons.This provides us a way to improve the magnetic-field generation by using a micro-structured plasma grating in front of the solid target.Compared with that for a common flat target,hot electrons can be effectively heated with the well-designed grating size,leading to a stronger magnetic field.The spatial distribution of magnetic fields can be modulated by optimizing the grating period and height as well as the incident angle of the laser pulse.

Dust Condensation of SiC, SiO in Asymptotic Giant Branch Stellar Winds-SiC Spectrum

We have chosen the Large Scale Atomic/Molecular Massively Parallel Simulator (LAMMPS) code to calculate the coalescence of silicon carbide (SiC),silicon oxide dust (SiO) in the AGB stellar wind.LAMMPS is a classica molecular dynamics simulation code.At the same time,we consider the effect of temperature on the evolution of molecular dynamics.We also calculated the temperature change of non-spherical SiC,SiO dust coalescence.The condensation temperature range of SiC dust in the AGB stellar wind is[300–500]k and[900–1100]k for SiO Finally,the infrared spectrum of SiC was calculated using Gaussian 16 software.The 77SiC,70Si_(3)C_(3),and 121Si_(3)C_(3) models have clear characteristic peaks of infrared spectra responding at 5,8.6,11.3,15,19,and 37μm.

Stable photocurrent-voltage characteristics of perovskite single crystal detectors obtained by pulsed bias

Photocurrent-voltage characterization is a crucial method for assessing key parameters in x-ray or y-ray semiconductor detectors,especially the carrier mobility lifetime product.However,the high biases during photocurrent measurements tend to cause severe ion migration,which can lead to the instability and inaccuracy of the test results.Given the mixed electronic-ionic charac teristics,it is imperative to devise novel methods capable of precisely measuring photocurrentvoltage characteristics under high bias conditions,free from interference caused by ion migration.In this paper,pulsed bias is employed to explore the photocurrent-voltage characteristics of MAPbBr_(3) single crystals.The method yields stable photocurrent-voltage characteristics at a pulsed bias of up to 30 V,proving to be effective in mitigating ion migration.Through fitting the modified Hecht equation,we determined the mobility lifetime products of 1.0×10^(2) cm^(2)·V^(-1)for hole and 2.78×10~(-3)cm^(2)·V^(-1)for electron.This approach offers a promising solution for accurately measuring the transport properties of carriers in perovskite.

Advances on Axial Coordination Design of Single‑Atom Catalysts for Energy Electrocatalysis:A Review

Single-atom catalysts(SACs)have garnered increasingly growing attention in renewable energy scenarios,especially in electrocatalysis due to their unique high efficiency of atom utilization and flexible electronic structure adjustability.The intensive efforts towards the rational design and synthesis of SACs with versatile local configurations have significantly accelerated the development of efficient and sustainable electrocatalysts for a wide range of electrochemical applications.As an emergent coordination avenue,intentionally breaking the planar symmetry of SACs by adding ligands in the axial direction of metal single atoms offers a novel approach for the tuning of both geometric and electronic structures,thereby enhancing electrocatalytic performance at active sites.In this review,we briefly outline the burgeoning research topic of axially coordinated SACs and provide a comprehensive summary of the recent advances in their synthetic strategies and electrocatalytic applications.Besides,the challenges and outlooks in this research field have also been emphasized.The present review provides an in-depth and comprehensive understanding of the axial coordination design of SACs,which could bring new perspectives and solutions for fine regulation of the electronic structures of SACs catering to high-performing energy electrocatalysis.

Application of nano-patterned InGaN fabricated by selfassembled Ni nano-masks in green InGaN/GaN multiple quantum wells

The nano-patterned InGaN film was used in green InGaN/GaN multiple quantum wells(MQWs)structure,to relieve the unpleasantly existing mismatch between high indium content InGaN and GaN,as well as to enhance the light output.The different self-assembled nano-masks were formed on InGaN by annealing thin Ni layers of different thicknesses.Whereafter,the InGaN films were etched into nano-patterned films.Compared with the green MQWs structure grown on untreated InGaN film,which on nano-patterned InGaN had better luminous performance.Among them the MQWs performed best when 3 nm thick Ni film was used as mask,because that optimally balanced the effects of nano-patterned InGaN on the crystal quality and the light output.

Robust state of charge estimation of lithium-ion battery via mixture kernel mean p-power error loss LSTM with heap-based-optimizer

The state of charge(SOC)estimation of lithium-ion battery is an important function in the battery management system(BMS)of electric vehicles.The long short term memory(LSTM)model can be employed for SOC estimation,which is capable of estimating the future changing states of a nonlinear system.Since the BMS usually works under complicated operating conditions,i.e the real measurement data used for model training may be corrupted by non-Gaussian noise,and thus the performance of the original LSTM with the mean square error(MSE)loss may deteriorate.Therefore,a novel LSTM with mixture kernel mean p-power error(MKMPE)loss,called MKMPE-LSTM,is developed by using the MKMPE loss to replace the MSE as the learning criterion in LSTM framework,which can achieve robust SOC estimation under the measurement data contaminated with non-Gaussian noises(or outliers)because of the MKMPE containing the p-order moments of the error distribution.In addition,a meta-heuristic algorithm,called heap-based-optimizer(HBO),is employed to optimize the hyper-parameters(mainly including learning rate,number of hidden layer neuron and value of p in MKMPE)of the proposed MKMPE-LSTM model to further improve its flexibility and generalization performance,and a novel hybrid model(HBO-MKMPE-LSTM)is established for SOC estimation under non-Gaussian noise cases.Finally,several tests are performed under various cases through a benchmark to evaluate the performance of the proposed HBO-MKMPE-LSTM model,and the results demonstrate that the proposed hybrid method can provide a good robustness and accuracy under different non-Gaussian measurement noises,and the SOC estimation results in terms of mean square error(MSE),root MSE(RMSE),mean absolute relative error(MARE),and determination coefficient R2are less than 0.05%,3%,3%,and above 99.8%at 25℃,respectively.

Highly Efficient and Stable FAPbI_(3) Perovskite Solar Cells and Modules Based on Exposure of the(011)Facet

Perovskite crystal facets greatly impact the performance and stability of their corresponding photovoltaic devices.Compared to the(001)facet,the(011)facet yields better photoelectric properties,including higher conductivity and enhanced charge carrier mobility.Thus,achieving(011)facet-exposed films is a promising way to improve device performance.However,the growth of(011)facets is energetically unfavorable in FAPbI_(3) perovskites due to the influence of methylammonium chloride additive.Here,1-butyl-4-methylpyridinium chloride([4MBP]Cl)was used to expose(011)facets.The[4MBP]^(+)cation selectively decreases the surface energy of the(011)facet enabling the growth of the(011)plane.The[4MBP]^(+)cation causes the perovskite nuclei to rotate by 45°such that(011)crystal facets stack along the out-of-plane direction.The(011)facet has excellent charge transport properties and can achieve better-matched energy level alignment.In addition,[4MBP]Cl increases the activation energy barrier for ion migration,suppressing decomposition of the perovskite.As a result,a small-size device(0.06 cm2)and a module(29.0 cm2)based on exposure of the(011)facet achieved power conversion efficiencies of 25.24%and 21.12%,respectively.

Direct measurement of an energy-dependent single-event-upset cross-section with time-of-flight method at CSNS

To predict the soft error rate for applications, it is essential to study the energy dependence of the single-event-upset(SEU) cross-section. In this work, we present a direct measurement of the SEU cross-section with the Back-n white neutron source at the China Spallation Neutron Source. The measured cross section is consistent with the soft error data from the manufacturer and the result suggests that the threshold energy of the SEU is about 0.5 Me V, which confirms the statement in Iwashita’s report that the threshold energy for neutron soft error is much below that of the(n, α) cross-section of silicon.In addition, an index of the effective neutron energy is suggested to characterize the similarity between a spallation neutron beam and the standard atmospheric neutron environment.