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Mg doping reduced full width at half maximum of the near-band-edge emission in Mg doped ZnO films 被引量:3
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作者 龙雪 李祥 +3 位作者 蔺彭婷 程兴旺 刘颖 曹传宝 《Chinese Physics B》 SCIE EI CAS CSCD 2010年第2期435-438,共4页
Sol--gol method was employed to synthesize Mg doped ZnO films on Si substrates. The annealing temperature-dependent structure and optical property of the produced samples were studied. An interesting result observed i... Sol--gol method was employed to synthesize Mg doped ZnO films on Si substrates. The annealing temperature-dependent structure and optical property of the produced samples were studied. An interesting result observed is that increasing Mg concentration in the studied samples induces the full width at half maximum (FWHM) of their near-band-edge (NBE) emission decrease and the defect related emission of the corresponding sample suppresses drastically. The possible mechanism of the observed result is discussed. 展开更多
关键词 DOPING ZnO PHOTOLUMINESCENCE
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