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A Transfer Matrix-Based Analysis of Vertical-Cavity Semiconductor Optical Amplifiers 被引量:6
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作者 王刚 罗斌 +1 位作者 潘炜 熊杰 《Chinese Physics Letters》 SCIE CAS CSCD 2005年第10期2561-2564,共4页
Based on the transfer matrix method, we present a new one-dimensional steady-state model of vertical-cavity semiconductor optical amplifiers (VCSOAs), in which the longitudinal carrier concentration distribution in ... Based on the transfer matrix method, we present a new one-dimensional steady-state model of vertical-cavity semiconductor optical amplifiers (VCSOAs), in which the longitudinal carrier concentration distribution in the active region and the discontinuity of the refractive index inside the cavity is taken into consideration. The model is theoretically proven to be a reliable one for describing the standing wave effect in a periodic gain structure. By using this model, some optical amplification characteristics of VCSOAs are investigated. 展开更多
关键词 LASER-AMPLIFIERS FABRY-PEROT DESIGN
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