A Novel Single-Switch Single-Stage Electronic Ballast

A single-stage single-switch high- frequency electronic ballast topology is presented. The circuit topology is the integration of a buck power- factor-correction （PFC） converter and a class E resonant inverter with only one active power switch. The buck converter is operated in discontinuous conduction mode and at a fixed switching frequency, and constant duty cycle to achieve high power factor and it can be controlled easily. Detailed analysis of the operation and characteristics of the circuit is provided. Simulation results satisfy present standard requirements.

Significant improvement of OLED efficiency and stability by doping both HTL and ETL with different dopant in heterojunction of polymer/small-molecules

This paper reports that the polymer/organic heterojunction doped light-emitting diodes using a novel poly-TPD as hole transport material and doping both hole transport layer and emitter layer with the highly fluorescent rubrene and DCJTB has been successfully fabricated. The basic structure of the heterostructure is PTPD/Alq3. When hole transport layer and electron transport layer are doped simultaneously with different dopant, the electrol quantum efficiencies are about 3 times greater than that of the undoped device. Compared with undoped device and conventional TPD/Alq3 diode, the stability of the doping device is significantly improved. The process of emission for doped device may include carrier trapping as well as FSrster energy transfer.

Effects of high-dose Ge ion implantation and post-implantation annealing on ZnO thin films

This paper reports that ion implantation to a dose of 1 ×10^17 ions/cm^2 was performed on c-axis-orientated ZnO thin films deposited on （0001） sapphire substrates by the sol-gel technique. After ion implantation, the as-implanted ZnO films were annealed in argon ambient at different temperatures from 600 - 900 ℃. The effects of ion implantation and post-implantation annealing on the structural and optical properties of the ZnO films were investigated by x-ray diffraction （XRD）, photoluminescence （PL）. It was found that the intensities of （002） peak and near band edge （NBE） exitonic ultraviolet emission increased with increasing annealing temperature from 600- 900 ℃. The defect related deep level emission （DLE） firstly increased with increasing annealing temperature from 600 - 750 ℃, and then decreased quickly with increasing annealing temperature. The recovery of the intensities of NBE and DLE occurs at ～850℃ and ～750℃ respectively. The relative PL intensity ratio of NBE to DLE showed that the quality of ZnO films increased continuously with increasing annealing temperature from 600 - 900 ℃.

Effects of precursor solution concentration on the properties and morphology of YBCO films deposited by TFA-MOD method

Epitaxial YBCO films were deposited on （100） LaAlO3 single-crystal substrates by metalorganic deposition of metal trifluoroacetate precursors with different concentrations. All the YBCO films have Tc around 91 K and Jc excess 2 MA/cm^2 at 77 K in zero field. XRD θ-2θscans show all the films have c-axis normal orientation. The FWHM （full width at half-maximum intensity） values of X-ray ω-scans of （005） reflection are 0.379°, 0.283°, and 0.543° for the YBCO thin films deposited with precursor solution concentrations of 1.52, 1.0, and 0.75 mol/L, respectively. With the concentration of the precursors decreasing, the thickness of the films decreases linearly. SEM micrographs show that porosities in the films become bigger with the precursor solution concentration decreasing. The big porosities in the film with the lowest concentration precursor deteriorate the superconducting property and make it have a wider superconducting transition and a lower Jc.

Preparation of p-type ZnO:(Al, N) by a combination of sol-gel and ion-implantation techniques

We report the preparation of p-type ZnO thin films on （0001） sapphire substrates by a combination of sol-gel and ion-implantation techniques. The results of the Hall-effect measurements carried out at room temperature indicate that the N-implanted ZnO：Al films annealed at 600℃ have converted to p-type conduction with a hole concentration of 1.6 × 1018 cm^-3, a hole mobility of 3.67cm^2/V· s and a minimum resistivity of 4.80 cm-Ω. Ion-beam induced damage recovery has been investigated by x-ray diffraction （XRD）, photoluminescence （PL） and optical transmittance measurements. Results show that diffraction peaks and PL intensities are decreased by N ion implantation, but they nearly recover after annealing at 600℃. Our results demonstrate a promising approach to fabricate p-type ZnO at a low cost.

EFFECT OF Si CONTENT ON ORDERING DEGREE AND ELECTROMAGNETIC CHARACTERISTICS IN FeSiAl ALLOYS

FeSiAl alloys ribbons synthesized by melt-quench were annealed in vacuum at 873 K for 60 rain. The flaky powders were prepared by milling the annealed ribbons for 70 h. After milling, the powders were heat treated at 573 K for 90 rain. The ordering degree of the powders lattice structure was analyzed by X-ray diffraction （XRD）. The measurement of specific saturation magnetization was carried out by vibrating samples magnetometer （VSM）. Complex permittivity and complex permeability in the frequency band of 0.5-18 GHz were measured with the vector network analyzer. The ordering degree of the superlattice structure increased from 0.2＇7 to 0.49. Complex permittivity and complex permeability decreased with increasing Si content. After ordering, the specific saturation magnetization decreased from 134.2 to 85.0 A.m2.kg-1. For use in anti-EMI material, the total contents of Si and Al in FeSiAl alloys should be controlled at a low level.

The structural and magnetic properties of barium ferrite powders prepared by the sol-gel method

In this paper, M-type hexagonal barium ferrite powders are synthesized using the sol-gel method. A dried precursor heated in air is analyzed in the temperature range from 50 to 1200 ℃ using thermo-gravimetric analysis and differential scanning calorimetry. The effects of the additives and the cacinating temperature on the magnetic properties are investigated, and the results show that single-phase barium ferrite powders can be formed. After heat-treating at 950 ℃ for 4h with 3 wt% additive, the coercivity and saturation magnetization are found to be 440 Oe and 57.9 emu/g, respectively.

Direction of Arrivals Estimation for Correlated Broadband Radio Signals by MVDR Algorithm Using Wavelet

A theoretical relationship between the wavelet transform and the fast fourier transformation(FFT) methods in broadband wireless signal is proposed for solving the direction of arrivals(DOAs) estimation problem. This leads naturally to the derivation of minimum variance distortionless response(MVDR) algorithm, which combines the benefits of subspace methods with those of wavelet, and spatially smoothed versions are utilized which exhibits good performance against correlated signals. We test the method's performance by simulating and comparing the performance of proposed algorithm, FFT MVDR and MVDR with correlated signals, and an improved performance is obtained.

Improvement on Frequency Performance of SOI SiGe HBT

Based on the advantages of SOI technology, the frequency performance of SiGe HBT with SOI structure has been simulated. Compared with bulk SiGe HBT, the results show that the buried oxide layer （BOX） can reduce collector-base capacitance CCB with the maximum value 89.3%, substrate-base capacitance CSB with 94. 6%, and the maximum oscillation frequency is improved by 2.7. The SOl structure improves the frequency performance of SiGe HBT, which is adaptable to high-speed and high power applications.

Characterization of vertical Au/β-Ga_2O_3 single-crystal Schottky photodiodes with MBE-grown high-resistivity epitaxial layer

High-resistivity β-Ga203 thin films were grown on Si-doped n-type conductive β-Ga203 single crystals by molecular beam epitaxy （MBE）. Vertical-type Schottky diodes were fabricated, and the electrical properties of the Schottky diodes were studied in this letter. The ideality factor and the series resistance of the Schottky diodes were estimated to be about 1.4 and 4.6 x 10^6 %. The ionized donor concentration and the spreading voltage in the Schottky diodes region are about 4 x 10^18 cm-3 and 7.6 V, respectively. The ultra-violet （UV） photo-sensitivity of the Schottky diodes was demonstrated by a low-pressure mercury lamp illumination. A photoresponsivity of 1.8 A/W and an external quantum efficiency of 8.7 x 10%2% were observed at forward bias voltage of 3.8 V, the proper driving voltage of read-out integrated circuit for UV camera. The gain of the Schottky diode was attributed to the existence of a potential barrier in the i-n junction between the MBE-grown highly resistive β-Ga203 thin films and the n-type conductive β-Ga203 single-crystal substrate.

Effects of Heat Treatment on Thermoelectric and Infrared Properties of Bi_2Te_3 Films

In this work,Bi2Te3 films（250 nm） are fabricated on Si O2/Si substrates by radio frequency（RF） magnetron sputtering at room temperature,and the prepared films are annealed over the temperature range of 200 °C to 400 °C.Crystallinity and electrical properties of the films can be tuned correspondingly.The power factors of Bi2Te3 films of 0.85 μW/K2 cm to 11.43 μW/K2 cm were achieved after annealing.The infrared reflectance measurements from 2.5 μm to 5.0 μm demonstrate that there is also a slight red-shift of the plasma oscillation frequency in the Bi2Te3 films.By means of plasmonic calculations,we attribute the red-shift of absorption peaks to the reduction of carrier concentration and the change of effective mass of Bi2Te3 films with the increased annealing temperature.

Modeling and Analysis of Pulse Skip Modulation

The state space average model and the large signal models of Pulse Skip Modulation （PSM） mode are given in this paper. Farther more, based on these models and simulations of PSM converter circuits, the analysis of the characteristics of PSM converter is described in this paper, of which include efficiency, frequency spectrum analysis, output voltage ripple, response speed and interference rejection capability. Compared with PWM control mode, PSM converter has high efficiency, especially with fight loads, quick response, good interference rejection and good EMC characteristic. Improved PSM slightly, it could be a kind of good independent regulating mode during the whole operating process for a DC-DC converter. Finally, some experimental results are also presented in this paper.

Design of Track/Hold (T/H) Circuit of Broad Bandwidth and High Speed Pipeline Structure ADC Based on the Super Frequency Application

A track/hold （T/H） circuit of broad bandwidth high speed pipeline structure ADC based on the super frequency application is designed in the paper. Some main factors affecting SNR of high speed ADC, such as aperture uncertainty, switch capacitor, and MOS switch, are analyzed. In the circuit, the full-differential structure and the bottom plate sampling technique are adopted to optimize the switch capacitors and MOS switches. The result based on the Spectre simulation on 0.35pm Bi- CMOS technology indicate that the aperture uncertainty, charge-injection, and non-linearity of clock feed-through are considerably restrained and the performance of T/H circuit is enhanced

A Study about Fe-Ni Mechanical Alloying Process by Dry and Wet Method

The evolutions of microstructure of Fe0.85Ni0.15 products, which were prepared by mechanical alloying (MA) with and without process control agent (PCA), were studied using X-ray diffraction and scanning electron microscopy respectively. After MA without PCA (dry method) for 30h, Fe0.85Ni0.15 nanocrystalline alloy powders with bcc-Fe(Ni) phase were obtained; however, powders milled with PCA (wet method) from 20 to 90 h, were unalloyed Fe-Ni mixtures with balanced morphology. It seems that dry method works efficiently in nanocrystalline alloying while wet method postpones MA but functionally fines the morphology of materials. Finally, the results were discussed considering the MA kinetics.

Multilayer Low Pass Filter Using LTCC Technology

The implementation and characteristics of a compact lumped-element three-order low pass filter are presented in this paper. The filter with 120 MHz cut off frequency, as well as more than 20 dB of the attenuation above 360 MHz frequency band is successfully manufactured in an LTCC substrate with 40 pm layer thickness. The overall size of the filter is 2.0 mm×1.2 mm×0.9 mm. A good coincidence between the measured results and the full-wave electromagnetic designed responses is observed.

Hydrogen Embrittlement Processes and Al/Al_2O_3 Hydrogen Resistance Coatings of NdFeB Magnets

After analyzing the phenomena and processes of hydrogen embrittlement of NdFeB permanent magnets, RF magnetron sputtering was used to fabricate Al thin films and then oxidized to form the Al/Al_2O_3 composite films on the magnets as the hydrogen resistance coatings. SEM and EDS were used to examine the morphology and composition respectively. Hydrogen resistance performance was tested by exposing the magnets in 10 MPa hydrogen gas at room temperature. The results show that the magnets with 8 μm Al/Al_2O_3 coatings can withstand hydrogen of 10 MPa for 65 min without being embrittled into powder. The samples with and without hydrogen resistance coatings have almost the same magnetic properties.

Nanoscale control of low-dimensional spin structures in manganites

Due to the upcoming demands of next-generation electronic/magnetoelectronic devices with low-energy consumption,emerging correlated materials（such as superconductors,topological insulators and manganites） are one of the highly promising candidates for the applications.For the past decades,manganites have attracted great interest due to the colossal magnetoresistance effect,charge-spin-orbital ordering,and electronic phase separation.However,the incapable of deterministic control of those emerging low-dimensional spin structures at ambient condition restrict their possible applications.Therefore,the understanding and control of the dynamic behaviors of spin order parameters at nanoscale in manganites under external stimuli with low energy consumption,especially at room temperature is highly desired.In this review,we collected recent major progresses of nanoscale control of spin structures in manganites at low dimension,especially focusing on the control of their phase boundaries,domain walls as well as the topological spin structures（e.g.,skyrmions）.In addition,capacitor-based prototype spintronic devices are proposed by taking advantage of the above control methods in manganites.This capacitor-based structure may provide a new platform for the design of future spintronic devices with low-energy consumption.

Study on ChemFET NO_2 Gas Sensor Array

Based on conventional metal-oxide-semiconductor field-effect transistor (MOSFET),a novel kind of chemical field-effect transistor (ChemFET) gas sensor array has been designed and fabricated.The obtained sensor consists of self-assembly polyaniline (PAN) composite film containing poly(acrylic acid) (PAA) which was used as gate material of MOSFET instead of conventional metallic gate.The UV-Vis absorption spectra of PAN/PAA films were characterized.The NO_2 gas sensitive property of the ChemFET sensor array was also investigated.Results show that the drain current of devices increases with increasing of back-side voltage,and decreases with the increase of NO_2 concentration when the NO_2 concentration is below 20μg/g.The temperature dependence of ChemFET sensor array shows that the drain current of ChemFET sensor decreases with increasing of temperature.

SIMULATION OF THE MAGNETIZATION REVERSAL PROCESS OF RECTANGLE-SHAPED NiFe FILM ELEMENTS UNDER AN ORTHOGONAL MAGNETIC FIELD

The magnetization reversal process of nano-size rectangle-shaped NiFe film elements with different aspect ratios have been investigated under the orthogonally applied magnetic fields by micromagnetic simulation. Different magnetization reversal modes can appear depending on whether the bias field is applied or not. When there is no bias field, double “C” state is the initial reversal state. However, when there is a bias field, “S” state is the starting mode. The larger the aspect ratio is, the larger the switching field is. But, when the aspect ratio is larger than 3, the increase of the switching field ceases. These results can provide useful information to the application of the patterned NiFe film with rectangular elements.

Influence of Annealing on Microstructure and Photoluminescence Properties of Al-Doped ZnO Films

Effect of annealing temperature and time on the microstructure and photoluminescence(PL)properties of Al doped ZnO thin films deposited on Si(100)substrates by sol-gel method was investigated.An X-ray diffraction(XRD)was used to analyze the structural properties of the thin films.All the thin films have a preferential c-axis orientation,which are enhances in the annealing process.It is found from the PL measurement that near band edge(NBE)emission and deep-level(DL)emissions are observed in as-grown ZnO∶Al thin films.However,the intensity of DLE is much smaller than that of NBE.Enhancement of NBE is clearly observed after thermal annealing in air and the intensity of NBE increases with annealing temperature.Results also show that the PL spectrum is dependent not only on the processing temperature but also on the processing time.The DLE related defects can not be removed by annealing,and on the contrary,the annealing conditions actually favor their formation.