In this paper, we investigate the entanglement dynamics of a two-qubit entangled state coupled with its noisy envi- ronment, and plan to utilize weak measurement and quantum reversal measurement to study the entanglem...In this paper, we investigate the entanglement dynamics of a two-qubit entangled state coupled with its noisy envi- ronment, and plan to utilize weak measurement and quantum reversal measurement to study the entanglement dynamics under different decoherence channels in noninertial frames. Through the calculations and analyses, it is shown that the weak measurement can prevent entanglement from coupling to the amplitude damping channel, while the system is under the phase damping and flip channels. This protection protocol cannot prevent entanglement but will accelerate the death of entanglement. In addition, if the system is in the noninertial reference frame, then the effect of weak measurement will be weakened for the amplitude damping channel. Nevertheless, for other decoherence channels, the Unruh effect does not affect the quantum weak measurement, the only exception is that the maximum value of entanglement is reduced to √2/2 of the original value in the inertial frames.展开更多
The structures and the phase transitions of ScH3 under high pressure are investigated using first-principles calcula- tions. The calculated structural parameters at zero pressure agree well with the available experime...The structures and the phase transitions of ScH3 under high pressure are investigated using first-principles calcula- tions. The calculated structural parameters at zero pressure agree well with the available experimental data. With increasing pressure, the transition sequence hcp （GdHa-type）→ C2/m →fcc→4hcp （YH3-type）→Cmcm of ScH3 is predicted first; the corresponding transition pressures at 0 K are 23 GPa, 25 GPa, 348 GPa, and 477 GPa, respectively. The C2/m symmetry structure is a possible candidate but not a good one as the intermediate state from hexagonal to cubic in ScH3. On the other hand, via the analysis of the structures of hexagonal SCH2.9, cubic ScH3, and cubic ScH2, we find that the repulsive interactions of H-H atoms must play an important role in the transition from hexagonal to cubic.展开更多
We propose an efficient scheme for realizing quantum dense coding with three-particle GHZ state in separated low-Q cavities. In this paper, the GHZ state is first prepared with three atoms trapped, respectively, in th...We propose an efficient scheme for realizing quantum dense coding with three-particle GHZ state in separated low-Q cavities. In this paper, the GHZ state is first prepared with three atoms trapped, respectively, in three spatial separated cavities. Meanwhile, with the assistance of a coherent optical pulse and X-quadrature homodyne measurement, we can im- plement quantum dense coding with three-particle GHZ state with a higher probability. Our scheme can also be generalized to realize N-particle quantum dense coding.展开更多
A novel voltage-withstand substrate with high-K（HK, k 〉 3.9, k is the relative permittivity） dielectric and low specific on-resistance（Ron,sp） bulk-silicon, high-voltage LDMOS（HKLR LDMOS）is proposed in this pap...A novel voltage-withstand substrate with high-K（HK, k 〉 3.9, k is the relative permittivity） dielectric and low specific on-resistance（Ron,sp） bulk-silicon, high-voltage LDMOS（HKLR LDMOS）is proposed in this paper. The high-K dielectric and highly doped interface N＋-layer are made in bulk silicon to reduce the surface field drift region. The high-K dielectric can fully assist in depleting the drift region to increase the drift doping concentration（Nd） and reshape the electric field distribution. The highly doped N＋-layer under the high-K dielectric acts as a low resistance path to reduce the Ron,sp. The new device with the high breakdown voltage（BV）, the low Ron,sp, and the excellent figure of merit（FOM = BV^2/Ron,sp） is obtained. The BV of HKLR LDMOS is 534 V, Ron,sp is 70.6 m？·cm^2, and FOM is 4.039 MW·cm^（-2）.展开更多
基金Supported by Key Program of National Natural Science Foundation of China under Grant No. 60931002National Natural Science Foundation of China under Grant No.10704001+3 种基金Anhui Provincial Natural Science Foundation under Grant No. 070412060the Major Program of the Education Department of Anhui Province under Grant No. KJ2010ZD08the Key Program of the Education Department of Anhui Province under Grant No. KJ2010A287the Personal Development Foundation of Anhui Province under Grant No. 2009Z022
基金Project supported by the National Natural Science Foundation of China (Grant Nos.11074002 and 61275119)the Doctoral Science Foundation of the Ministry of Education of China (Grant No.20103401110003)the Natural Science Research Project of the Education Department of Anhui Province,China (Grant Nos.KJ2013A205,KJ2011ZD07,and KJ2012Z309)
文摘In this paper, we investigate the entanglement dynamics of a two-qubit entangled state coupled with its noisy envi- ronment, and plan to utilize weak measurement and quantum reversal measurement to study the entanglement dynamics under different decoherence channels in noninertial frames. Through the calculations and analyses, it is shown that the weak measurement can prevent entanglement from coupling to the amplitude damping channel, while the system is under the phase damping and flip channels. This protection protocol cannot prevent entanglement but will accelerate the death of entanglement. In addition, if the system is in the noninertial reference frame, then the effect of weak measurement will be weakened for the amplitude damping channel. Nevertheless, for other decoherence channels, the Unruh effect does not affect the quantum weak measurement, the only exception is that the maximum value of entanglement is reduced to √2/2 of the original value in the inertial frames.
基金Project supported by the National Natural Science Foundation of China (Grant No. 11174214)the Specialized Research Fund for the Doctoral Program of Higher Education, China (Grant No. 20090181110080)+2 种基金the National Basic Research Program of China (Grant No. 2011CB808201)the Special Project for Research Conditions of High-level Talents of Guizhou Province, China (Grant No. TZJF-2008-42)the Science Foundation of Education Bureau of Guizhou Province, China (Grant No. 2010053)
文摘The structures and the phase transitions of ScH3 under high pressure are investigated using first-principles calcula- tions. The calculated structural parameters at zero pressure agree well with the available experimental data. With increasing pressure, the transition sequence hcp （GdHa-type）→ C2/m →fcc→4hcp （YH3-type）→Cmcm of ScH3 is predicted first; the corresponding transition pressures at 0 K are 23 GPa, 25 GPa, 348 GPa, and 477 GPa, respectively. The C2/m symmetry structure is a possible candidate but not a good one as the intermediate state from hexagonal to cubic in ScH3. On the other hand, via the analysis of the structures of hexagonal SCH2.9, cubic ScH3, and cubic ScH2, we find that the repulsive interactions of H-H atoms must play an important role in the transition from hexagonal to cubic.
基金supported by the National Natural Science Foundation of China(Grant Nos.11074002 and 61275119)the Doctoral Foundation of the Ministry of Education of China(Grant No.20103401110003)the Natural Science Research Project of Education Department of Anhui Province,China(Grant Nos.KJ2013A205,KJ2011ZD07,and KJ2012Z309)
文摘We propose an efficient scheme for realizing quantum dense coding with three-particle GHZ state in separated low-Q cavities. In this paper, the GHZ state is first prepared with three atoms trapped, respectively, in three spatial separated cavities. Meanwhile, with the assistance of a coherent optical pulse and X-quadrature homodyne measurement, we can im- plement quantum dense coding with three-particle GHZ state with a higher probability. Our scheme can also be generalized to realize N-particle quantum dense coding.
基金Project supported by the National Natural Science Foundation of China(Grant No.61306094)the Project of Hunan Provincial Education Department,China(Grant No.13ZA0089)+1 种基金the Introduction of Talents Project of Changsha University of Science&Technology,China(Grant No.1198023)the Construct Program of the Key Discipline in Hunan Province,China
文摘A novel voltage-withstand substrate with high-K（HK, k 〉 3.9, k is the relative permittivity） dielectric and low specific on-resistance（Ron,sp） bulk-silicon, high-voltage LDMOS（HKLR LDMOS）is proposed in this paper. The high-K dielectric and highly doped interface N＋-layer are made in bulk silicon to reduce the surface field drift region. The high-K dielectric can fully assist in depleting the drift region to increase the drift doping concentration（Nd） and reshape the electric field distribution. The highly doped N＋-layer under the high-K dielectric acts as a low resistance path to reduce the Ron,sp. The new device with the high breakdown voltage（BV）, the low Ron,sp, and the excellent figure of merit（FOM = BV^2/Ron,sp） is obtained. The BV of HKLR LDMOS is 534 V, Ron,sp is 70.6 m？·cm^2, and FOM is 4.039 MW·cm^（-2）.
