Controlled growth and field emission of vertically aligned A1N nanostructures with different morphologies

The controllable growth of three different morphologies of AlN nanostructures （nanorod, nanotip and nanocrater） arrays are successfully realized by using chemical vapour deposition （CVD） technology. All three nanostructures are of single crystal h-AlN with a growth orientation of [001]. Their growth is attributed to the vapour-liquid-solid （VLS） mechanism. To investigate the factors affecting field emission （FE） properties of AlN nanostructures, we compare their FE behaviours in several aspects. Experimental results show that AIN nanocrater arrays possess the best FE properties, such as a threshold field of 7.2 V/μm and an emission current fluctuation lower than 4%. Moreover, the three AlN nanostructures all have good field emission properties compared with a number of other excellent cathode nanomaterials, which suggests that they are future promising FE nanomaterials.

The first-principles study of ferroelectric behaviours of PbTiO3/SrTiO3 and BaTiOn/SrTiO3 superlattices

We have performed the first-principles calculation to investigate the origins of ferroelectricities and different po- larization behaviours of superlattices BaTiO3/SrTiO3 and PbTiO3/SrTiO3. The density of state （DOS） and electronic charge profiles show that there are strong hybridizations between atoms Ti and O and between atoms Pb and O which play very important roles in producing the ferroelectricities of superlattices BaTiO3/SrTiO3 and PbTiO3/SrTiO3. Ow- ing to the decline of internal electric field in SrTiO3 （ST） layer, the tetragonality and polarizations of superlattices decrease with increasing the fraction of SrTiO3 in the superlattices. We find that the polarization of PbTiO3/SrTiO3 is largerthan that of BaTiO3/SrTiO3 at the same ratio of components, because the polarization mismatch between PbTiO3 and SrTiO3 is larger than that between BaTiO3 and SrTiO3. The polarization and tetragonality are en- hanced with respect to those of bulk tetragonal BaTiO3 in the superlattices BaTiO3/SrTiO3, while the polarization and tetragonality are reduced with respect to those of bulk tetragonal PbTiO3 in superlattices PbTiO3/SrTiO3.

Analysis of each branch current of serial solar cells by using an equivalent circuit model

In this paper, based on the equivalent single diode circuit model of the solar cell, an equivalent circuit diagram for two serial solar cells is drawn. Its equations of current and voltage are derived from Kirchhoff＇s current and voltage law. First, parameters are obtained from the I-V （current-voltage） curves for typical monocrystalline silicon solar cells （125 mmx 125 mm）. Then, by regarding photo-generated current, shunt resistance, serial resistance of the first solar cell, and resistance load as the variables. The properties of shunt currents （Ishl and Ish2）, diode currents （/D1 and/]：）2）, and load current （IL） for the whole two serial solar cells are numerically analyzed in these four cases for the first time, and the corresponding physical explanations are made. We find that these parameters have different influences on the internal currents of solar cells. Our results will provide a reference for developing higher efficiency solar cell module and contribute to the better understanding of the reason of efficiency loss of solar cell module.

Microstructure-based multiphysics modeling for semiconductor integration and packaging

Semiconductor technology and packaging is advancing rapidly toward system integration where the packaging is co-designed and co-manufactured along with the wafer fabrication.However,materials issues,in particular the mesoscale microstructure,have to date been excluded from the integrated product design cycle of electronic packaging due to the myriad of materials used and the complex nature of the material phenomena that require a multiphysics approach to describe.In the context of the materials genome initiative,we present an overview of a series of studies that aim to establish the linkages between the material microstructure and its responses by considering the multiple perspectives of the various multiphysics fields.The microstructure was predicted using thermodynamic calculations,sharp interface kinetic models,phase field,and phase field crystal modelingtechniques.Based on the predicted mesoscale microstructure,linear elastic mechanical analyses and electromigration simulations on the ultrafine interconnects were performed.The microstructural index extracted by a method based on singular value decomposition exhibits a monotonous decrease with an increase in the interconnect size.An artificial neural network-based fitting revealed a nonlinear relationship between the microstructure index and the average von Mises stress in the ultrafine interconnects.Future work to address the randomness of microstructure and the resulting scatter in the reliability is discussed in this study.

DYNAMIC BEHAVIOR OF TWO PARALLEL SYMMETRY CRACKS IN MAGNETO-ELECTRO-ELASTIC COMPOSITES UNDER HARMONIC ANTI-PLANE WAVES

The dynamic behavior of two parallel symmetry cracks in magneto-electro-elastic composites under harmonic anti-plane shear waves is studied by Schmidt method. By using the Fourier transform, the problem can be solved with a pair of dual integral equations in which the unknown variable is the jumps of the displacements across the crack surfaces. To solve the dual integral equations, the jumps of the displacements across the crack surface were expanded in a series of Jacobi polynomials. The relations among the electric filed, the magnetic flux and the stress field were obtained. From the results, it can be obtained that the singular stresses in piezoelectric/piezomagnetic materials carry the same forms as those in a general elastic material for the dynamic anti-plane shear fracture problem. The shielding effect of two parallel cracks was also discussed.

Nonlinear dissipative dynamics of a two-component atomic condensate coupling with a continuum

We investigate the nonlinear dissipative coherence bifurcation and population dynamics of a two-component atomic Bose-Einstein condensate coupling with a continuum. The coupling between the two-component condensates and the continuum brings effective dissipations to the two-component condensates. The steady states and the coherence bifurcation depend on both dissipation and the nonlinear interaction between condensed atoms. The coherence among condensed atoms may be even enhanced by the effective dissipations. The combination of dissipation and nonlinearity allows one to control the switching between different self-trapped states or the switching between a self-trapped state and a non-self-trapped state.

Photoluminescence of rare-earth ion(Eu^(3+), Tm^(3+), and Er^(3+))-doped and co-doped ZnNb_2O_6 for solar cells

Visible converted emissions produced at an excitation of 286 nm in Zn Nb2O6 ceramics doped with rare-earth ions(RE= Eu3+, Tm3+, Er3+or a combination of these ions) were investigated with the aim of increasing the photovoltaic efficiency of solar cells. The structure of RE:Zn Nb2O6 ceramics was confirmed by x-ray diffraction patterns. The undoped Zn Nb2O6 could emit a blue emission under 286-nm excitation, which is attributed to the self-trapped excitons’ recombination of the efficient luminescence centers of edge-shared Nb O6 groups. Upon 286-nm excitation, Eu:Zn Nb2O6, Tm:Zn Nb2O6, and Er:Zn Nb2O6 ceramics showed blue, green, and red emissions, which correspond to the transitions of5D0→7FJ(J = 1–4)(Eu3+),1G4→3H6(Tm3+), and2H11/2/4S3/2→4I15/2(Er3+), respectively. The calculated CIE chromaticity coordinates of Eu:Zn Nb2O6, Tm:Zn Nb2O6, and Er:Zn Nb2O6are(0.50, 0.31),(0.14, 0.19), and(0.29, 0.56), respectively. RE ionco-doped Zn Nb2O6 showed a combination of characteristic emissions. The chromaticity coordinates of Eu/Tm:Zn Nb2O6,Eu/Er:Zn Nb2O6, and Tm/Er:ZnNb2O6 were calculated to be(0.29, 0.24),(0.45, 0.37), and(0.17, 0.25).

Nonperturbative solutions to cylindrical resonant cavities with dissipative medium and imperfectly conducting walls

Cylindrical waveguides without end surfaces can serve as two-dimensional resonant cavities. In such cavities the electromagnetic oscillations corresponding to an eigenfrequency can always be taken as TM or TE modes even when the walls have a finite conductivity and the medium is absorptive. This paper obtains analytic solutions to the field equations when the cylinder has a circular cross section. Some nonperturbative conclusions are drawn from the eigenvalue equation. Approximate analytic results for the resonant frequencies are obtained when the absorption of the medium is small and the walls are good conductors. Stability of the eigen modes is discussed. Similar results for the coaxial line are presented.

Enhanced light emission from InGaN/GaN quantum wells by using surface plasmonic resonances of silver nanoparticle array

The effect of silver nanostructures prepared by nanosphere lithography on the photoluminescence（PL） properties of blue-emitting In Ga N/Ga N quantum wells（QWs） is studied. Arrays of silver nanoparticles are fabricated to yield a collective surface plasmonic resonance（SPR） near to the QWs emission wavelength. A large enhancement in peak PL intensity is observed, when the induced SPR wavelength of the nanoparticles on the QWs sample matches the QWs emission wavelength. The study proves that the SPRs could enhance the light emission efficiency of semiconductor material.

Quantum computation with two-dimensional graphene quantum dots

We study an array of graphene nano sheets that form a two-dimensional S = 1/2 Kagome spin lattice used for quantum computation. The edge states of the graphene nano sheets are used to form quantum dots to confine electrons and perform the computation. We propose two schemes of bang-bang control to combat decoherence and realize gate operations on this array of quantum dots. It is shown that both schemes contain a great amount of information for quantum computation. The corresponding gate operations are also proposed.

Correlation dynamics of two-parameter qubit-qutrit states under decoherence

We investigate the dynamics of correlations for two-parameter qubit--qutrit states under various local decoherence channels including depalising, phase-flip, bit- and trit-flip, bit- and trit-phase-flip, and depolarizing channels. We find that, under certain conditions, the classical： correlations may not be affected by the noise or decay monotonically. The quantum correlations measured by measurement-induced disturbance （MID） show three types of dynamical behaviors： （i） monotonic ＇decay to zero, （ii） monotOniC decay to a nonzero steady value, （iii） increase from zero and then decrease to zero in a monotonic way. Consequently, we find that, differing from the dynamics of entanglement, the present classical and quantum correlations do not reveal sudden death behavior.

SCATTERING OF ANTI-PLANE SHEAR WAVES IN A FUNCTIONALLY GRADED MATERIAL STRIP WITH AN OFF-CENTER VERTICAL CRACK

The scattering problem of anti-plane shear waves in a functionally graded material strip with an off-center crack is investigated by use of Schmidt method. The crack is vertically to the edge of the strip. By using the Fourier transform, the problem can be solved with the help of a pair of dual integral equations that the unknown variable is the jump of the displacement across the crack surfaces. To solve the dual integral equations, the jump of the displacement across the crack surfaces was expanded in a series of Jacobi polynomials. Numerical examples were provided to show the effects of the parameter describing the functionally graded materials, the position of the crack and the frequency of the incident waves upon the stress intensity factors of the crack.

Performance improvement of InGaN/GaN multiple quantum well visible-light photodiodes by optimizing TEGa flow

The performance of an InGaN/GaN multiple quantum well（MQW） based visible-light Schottky photodiode（PD）is improved by optimizing the source flow of TEGa during In Ga N QW growth. The samples with five-pair InGaN/GaN MQWs are grown on sapphire substrates by metal organic chemical vapor deposition. From the fabricated Schottky-barrier PDs, it is found that the smaller the TEGa flow, the lower the reverse-bias leakage is. The photocurrent can also be enhanced by depositing the In GaN QWs with using lower TEGa flow. A high responsivity of 1.94 A/W is obtained at 470 nm and -3-V bias in the PD grown with optimized TEGa flow. Analysis results show that the lower TEGa flow used for depositing In Ga N may lead to superior crystalline quality with improved InGaN/GaN interface, and less structural defects related non-radiative recombination centers formed in the MQWs.

Effect of H_3BO_3 on the phase stability and long persistence properties of Sr_(3.96)Al_(14)O_(25):Eu_(0.01)^(2+), Dy_(0.02)^(3+) phosphor

Sr3.96Al14025：Eu2＋,Dy3＋ long persistent materials with different weights of H3BO3 prepared by the high temper- ature solid-state reaction method were characterized by X-ray powder diffraction （XRD）, scanning electronic microscopy （SEM）, photoluminescence spectra （PL）, and thermoluminescence （TL）. The results of XRD indicate that the 3% addition of H3BO3 favorable for the formation of pure phase Sr4Al14025, and SrAl12O19 was generated when there is a low con- tent or high content of H3BO3. The average grain sizes of samples grow bigger with an increase of H3BO3. PL spectra show that the emission peak does not shift evidently and the emission intensity changes little, indicating that the different amount of H3BO3 has little influence on the crystal field. The decay characteristics and TL measurement show that H3BO3 affects the afterglow properties of Sr3.96Al14025：Eu2＋,Dy3＋, because the increasing H3BO3 leads to more defects in the Sr4Al14025 matrix.

Tuning a nano-pillar array for enhancing the photoluminescence extraction efficiency of GaN-based light-emitting diodes

We demonstrate the fabrication of hexagonal nano-pillar arrays at the surface of GaN-based light-emitting diodes （LEDs） by nanosphere lithography. By varying the oxygen plasma etching time, we could tune the size and shape of the pillar. The nano-pillar has a truncated cone shape. The nano-pillar array serves as a gradual effective refractive index matcher, which reduces the reflection and increases light cone. It is found that the patterned surface absorbs more pumping light. To compare extraction efficiencies of LEDs, it is necessary to normalize the photoluminescence power spectrum with total absorption rate under fixed pumping power, then we could obtain the correct enhancement factor of the photoluminescence extraction efficiency and optimized structure. The highest enhancement factor of the extraction efficiency is 10.6.

INVESTIGATION OF BEHAVIOR OF MODE-I INTERFACE CRACK IN PIEZOELECTRIC MATERIALS BY USING SCHMIDT METHOD

The behavior of a Mode-Ⅰ interface crack in piezoelectric materials was investigated under the assumptions that the effect of the crack surface overlapping very near the crack tips was negligible. By use of the Fourier transform, the problem can be solved with the help of two pairs of dual integral equations. To solve the dual integral equations, the jumps of the displacements across the crack surfaces were expanded in a series of Jacobi polynomials. It is found that the stress and the electric displacement singularities of the present interface crack solution are the same as ones of the ordinary crack in homogenous materials. The solution of the present paper can be returned to the exact solution when the upper half plane material is the same as the lower half plane material.

Theoretical research on electron beam modulation in a field-emission cold cathode electron gun

In order to develop miniaturized and integrated electron vacuum devices, the electron beam modulation in a field- emission （FE） electron gun based on carbon nanotubes is researched. By feeding a high-frequency field between the cathode and the anode, the steady FE electron beam can be modulated in the electron gun. The optimal structure of the electron gun is discovered using 3D electromagnetism simulation software, and the FE electron gun is simulated by PIC simulation software. The results show that a broadband （74-114 GHz） modulation can be achieved by the electron gun with a rhombus channel, and the modulation amplitude of the beam current increases with the increases in the input power and the electrostatic field.

Formation and photoluminescence properties of boron nanocones

This paper reports that a simple chemical vapour deposition method has been adopted to fabricate large scale, high density boron nanocones with thermal evaporation of B/B2O3 powders precursors in an Ar/H2 gas mixture at the synthesis temperature of 1000-1200℃. The lengths of boron nanocones are several micrometres, and the diameters of nanocone tops are in a range of 50-100 nm. transmission electron microscopy and selected area electron diffraction indicate that the nanocones are single crystalline α-tetragonal boron. The vapour liquid solid mechanism is the main formation mechanism of boron nanocones. One broad photolumineseence emission peak at the central wavelength of about 650 nm is observed under the 532 nm light excitation. Boron nanocones with good photoluminescence properties are promising candidates for applications in optical emitting devices.

Enhanced light extraction of GaN-based light-emitting diodes with periodic textured SiO_2 on Al-doped ZnO transparent conductive layer

We report an effective enhancement in light extraction of Ga N-based light-emitting diodes（LEDs） with an Al-doped Zn O（AZO） transparent conductive layer by incorporating a top regular textured SiO2 layer. The 2 inch transparent throughpore anodic aluminum oxide（AAO） membrane was fabricated and used as the etching mask. The periodic pore with a pitch of about 410 nm was successfully transferred to the surface of the SiO2 layer without any etching damages to the AZO layer and the electrodes. The light output power was enhanced by 19% at 20 m A and 56% at 100 m A compared to that of the planar LEDs without a patterned surface. This approach offers a technique to fabricate a low-cost and large-area regular pattern on the LED chip for achieving enhanced light extraction without an obvious increase of the forward voltage.

Linear ion trap imperfection and the compensation of excess micromotion

Quantum computing requires ultracold ions in a ground vibrational state, which is achieved by sideband cooling. We report our recent efforts towards the Lamb Dicke regime which is a prerequisite of sideband cooling. We first analyse the possible imperfection in our linear ion trap setup and then demonstrate how to suppress the imperfection by compensating the excess micromotion of the ions. The ions, after the micromotion compensation, are estimated to be very close to the Doppler-cooling limit.