Oxide transistor is the basic device to construct the oxide electronic circuit that is the backing to develop integrated oxide electronics with high efficiency and low power consumption.By growing the perovskite oxide...Oxide transistor is the basic device to construct the oxide electronic circuit that is the backing to develop integrated oxide electronics with high efficiency and low power consumption.By growing the perovskite oxide integrated layers and tailoring them to lead semiconducting functions at their interfaces,the development of oxide transistors may be able to perform.We realize a kind of p-i-n type integrated layers consisting of an n-type cuprate superconductor,p-type colossal magnetoresistance manganite,and a ferroelectric barrier(i).From this,bipolar transistors were fabricated at the back-to-back p-i-n junctions,for which the Schottky emission and p-n junction barriers,as well as the ferroelectric polarization,were integrated into the interfaces to control the transport properties;a preliminary but distinct current gain greater than 1.6 at input current of microampers order was observed.These results present a real possibility to date for developing bipolar all perovskite oxide transistors.展开更多
Conducting polymer polydimethylsiloxane （PDMS） is studied for the high performance electrode of organic electroluminescence devices. A method to prepare the electrode consisting of a SiC thin film and PDMS is invest...Conducting polymer polydimethylsiloxane （PDMS） is studied for the high performance electrode of organic electroluminescence devices. A method to prepare the electrode consisting of a SiC thin film and PDMS is investigated. By using ultra thin SiC films with different thicknesses, the organic electroluminescence devices are obtained in an ultra vacuum system with the model device PDMS/SiC/PPV/Alq3, where PPV is poly para-phenylene vinylene and Alq3 is tris（S-hydroxyquinoline） aluminium. The capacitance voltage （C - V）, capacitance-frequency （C - F）, current-voltage （I - V）, radiation intensity-voltage （R - V） and luminance eFficiency-voltage （E - V） measurements are systematically studied to investigate the conductivity, Fermi alignment and devices properties in organic semiconductors. Scanning Kelvin probe measurement shows that the work function of PDMS/SiC anode with a 2.5-nm SiC over layer can be increased by as much as 0.28eV, compared to the conventional ITO anode. The result is attributed to the charge transfer effect and ohmic contacts at the interface.展开更多
The basic propagation properties of the silica and silicon subwavelength-diameter hollow wire waveguides have been investigated by comparison. It shows that the silica and silicon subwavelength-diameter hollow wire wa...The basic propagation properties of the silica and silicon subwavelength-diameter hollow wire waveguides have been investigated by comparison. It shows that the silica and silicon subwavelength-diameter hollow wire waveguides have some interesting properties, such as enhanced evanescent field in the cladding, enhanced intensity in the hollow core, and large waveguide dispersion. For the different confinement ability, the enhanced field in the hollow core and cladding of the silica subwavelength-diameter hollow wire is much stronger than that of the silicon one for the same size.展开更多
基金Supported by the Knowledge Innovation Program of the Chinese Academy of Sciences under Grant No KJCX2YW-W16the National Basic Research Program of China(2010CB630700)the National Natural Science Foundation of China(10904116).
文摘Oxide transistor is the basic device to construct the oxide electronic circuit that is the backing to develop integrated oxide electronics with high efficiency and low power consumption.By growing the perovskite oxide integrated layers and tailoring them to lead semiconducting functions at their interfaces,the development of oxide transistors may be able to perform.We realize a kind of p-i-n type integrated layers consisting of an n-type cuprate superconductor,p-type colossal magnetoresistance manganite,and a ferroelectric barrier(i).From this,bipolar transistors were fabricated at the back-to-back p-i-n junctions,for which the Schottky emission and p-n junction barriers,as well as the ferroelectric polarization,were integrated into the interfaces to control the transport properties;a preliminary but distinct current gain greater than 1.6 at input current of microampers order was observed.These results present a real possibility to date for developing bipolar all perovskite oxide transistors.
基金Supported by the Hunan Province Natural Science Foundation of China under Grant No 06JJ20034.
文摘Conducting polymer polydimethylsiloxane （PDMS） is studied for the high performance electrode of organic electroluminescence devices. A method to prepare the electrode consisting of a SiC thin film and PDMS is investigated. By using ultra thin SiC films with different thicknesses, the organic electroluminescence devices are obtained in an ultra vacuum system with the model device PDMS/SiC/PPV/Alq3, where PPV is poly para-phenylene vinylene and Alq3 is tris（S-hydroxyquinoline） aluminium. The capacitance voltage （C - V）, capacitance-frequency （C - F）, current-voltage （I - V）, radiation intensity-voltage （R - V） and luminance eFficiency-voltage （E - V） measurements are systematically studied to investigate the conductivity, Fermi alignment and devices properties in organic semiconductors. Scanning Kelvin probe measurement shows that the work function of PDMS/SiC anode with a 2.5-nm SiC over layer can be increased by as much as 0.28eV, compared to the conventional ITO anode. The result is attributed to the charge transfer effect and ohmic contacts at the interface.
文摘The basic propagation properties of the silica and silicon subwavelength-diameter hollow wire waveguides have been investigated by comparison. It shows that the silica and silicon subwavelength-diameter hollow wire waveguides have some interesting properties, such as enhanced evanescent field in the cladding, enhanced intensity in the hollow core, and large waveguide dispersion. For the different confinement ability, the enhanced field in the hollow core and cladding of the silica subwavelength-diameter hollow wire is much stronger than that of the silicon one for the same size.
