Effects of transverse mode coupling and optical confinement factor on gallium-nitride based laser diode

We have investigated the transverse mode pattern and the optical field confinement factor of gallium nitride （GaN） laser diodes （LDs） theoretically. For the particular LD structure, composed of approximate 4 μm thick n-GaN substrate layer, the maximum optical confinement factor was found to be corresponding to the 5^th order transverse mode, the so-called lasing mode. Moreover, the value of the maximum confinement factor varies periodically when increasing the n-side GaN layer thickness, which simultaneously changes and increases the oscillation mode order of the GaN LD caused by the effects of mode coupling. The effects of the thickness and the average composition of Al in the AlGaN/GaN superlat.tice on the optical confinement factor are also presented. Finally, the mode coupling and optimization of the layers in the GaN-based LD are discussed.

Simulation of dielectric resonator for a high-T_c radio frequency superconducting quantum interference device

Nowadays, the high-critical-temperature radio frequency superconducting quantum interference device （high-Tc rf SQUID） is usually coupled to a dielectric resonator that is a standard 10× 10×1 mm^3 SrTiO3 （STO） substrate with a YBa2Cu3O7-δ （YBCO） thin-film flux focuser deposited on it. Recently, we have simulated a dielectric resonator for the high-Tc rf SQUID by using the ANSOFT High Frequency Structure Simulator （ANSOFT HFSS）. We simulate the resonant frequency and the quality factor of our dielectric resonator when it is unloaded or matches a 50-Ω impedance. The simulation results are quite close to the practical measurements. Our study shows that ANSOFT HFSS is quite suitable for simulating the dielectric resonator used for the high-Tc rf SQUID. Therefore, we think the ANSOFT HFSS can be very helpful for investigating the characteristics of dielectric resonators for high-Tc rf SQUIDs.

Electronic properties of graphene nanoribbon doped by boron/nitrogen pair:a first-principles study

By using the first-principles calculations, the electronic properties of graphene nanoribbon （GNR） doped by boron/nitrogen （B/N） bonded pair are investigated. It is found that B/N bonded pair tends to be doped at the edges of GNR and B/N pair doping in GNR is easier to carry out than single B doping and unbonded B/N co-doping in GNR. The electronic structure of GNR doped by B/N pair is very sensitive to doping site besides the ribbon width and chirality. Moreover, B/N pair doping can selectively adjust the energy gap of armchair GNR and can induce the semimetal-semiconductor transmission for zigzag GNR. This fact may lead to a possible method for energy band engineering of GNRs and benefit the design of graphene electronic device.

Mechanism of Bragg Diffraction-Assisted Light Extraction in GaN-based Light-Emitting Diodes Based on a Self-Consistent Model

By introducing the distribution of the light energy density in GaN-based light-emitting diode (LED),theLED model based on the incoherent regime and the light extraction efficiency are investigated.The energy density asa function of the angle of incidence is calculated to demonstrate the mechanism of the light extraction.The deviationbetween the tendencies of the transmissivity of the output layer and the extraction efficiency is also demonstrated.

Effect of Interface Nanotexture on Light Extraction of InGaN-Based Green Light Emitting Diodes

We report the enhancement of the light extraction of InGaN-based green light emitting diodes （LEDs） via the interface nanotexturing. The texture consists of high-density nanocraters on the surface of a sapphire substrate with an in situ etching. The width of nanocraters is about 0.5 μm and the depth is around 0.1 μm. It is demonstrated that the LEDs with interface texture exhibit about a 27% improvement in luminance intensity, compared with standard LEDs. High power InGaN-based green LEDs are obtained by using the interface nanotexture. An optical ray-tracing simulation is performed to investigate the effect of interface nanotexture on light extraction.

Optimization of top polymer gratings to improve GaN LEDs light transmission

We present a grating model of two-dimensional （2D） rigorous coupled wave analysis （RCWA） to study top diffraction gratings on light-emitting diodes （LEDs）. We compare the integrated-transmission of the non-grating, rectangular-grating, and triangular-grating cases for the same grating period of 6 μm, and show that the triangular grating has the best performance. For the triangular grating with 6-μm period, the LED achieves the highest light transmission at 6-μm grating bottom width and 2.9-μm grating depth. Compared with the non-grating case, the optimized light transmission improvement is about 74.6%. The simulation agrees with the experimental data of the thin polymer grating encapsulated flip-chip （FC） GaN-based LEDs for the light extraction improvement.

Lattice constant effects of photonic crystals on the extraction of guided mode of GaN based light emitting diodes

We have fabricated a series of square-lattice hole photonic crystal (2PhC) arrays simultaneously at the un-current injection region on a special sample of GaN based light emitting diode (LED) by using focus ion beam milling (FIBM). The lattice constants of the 2PhC arrays vary from 230 to 1500 nm,while the 2PhC arrays have a constant area of about 9 μm×18 μm and a fixed depth of 150±10 nm which approaches but does not penetrate the active layer. Microscopic electroluminescence images and spectral measurements consistently confirm that the top emitting intensities from different 2PhCs are all enhanced compared with the unpatterned region. It is demonstrated that the output coupling of propagating guided modes is realized by the diffracted transmission of the 2PhCs. The enhancement factors of the guided modes compared with the unpatterned region are plotted as function of the lattice constant. It is found that the highest enhancements for the extraction of guided modes were obtained for the lattice constant of 230 and 460 nm of 2PhCs. The results are discussed by the two-dimensional rigorous coupled wave analysis (RCWA).

Optimization of gallium nitride-based laser diode through transverse modes analysis

We investigate the transverse mode pattern in GaN quantum-well （QW） laser diode （LD） by numerical calculation. We optimize the current GaN LD structure by varying the n-GaN layer thickness. The n-type GaN layer is an important factor to determine the optical mode. Finally, we discuss the lasing performance of the GaN LD based on the transverse optical modes.