We have investigated the transverse mode pattern and the optical field confinement factor of gallium nitride (GaN) laser diodes (LDs) theoretically. For the particular LD structure, composed of approximate 4 μm t...We have investigated the transverse mode pattern and the optical field confinement factor of gallium nitride (GaN) laser diodes (LDs) theoretically. For the particular LD structure, composed of approximate 4 μm thick n-GaN substrate layer, the maximum optical confinement factor was found to be corresponding to the 5^th order transverse mode, the so-called lasing mode. Moreover, the value of the maximum confinement factor varies periodically when increasing the n-side GaN layer thickness, which simultaneously changes and increases the oscillation mode order of the GaN LD caused by the effects of mode coupling. The effects of the thickness and the average composition of Al in the AlGaN/GaN superlat.tice on the optical confinement factor are also presented. Finally, the mode coupling and optimization of the layers in the GaN-based LD are discussed.展开更多
Nowadays, the high-critical-temperature radio frequency superconducting quantum interference device (high-Tc rf SQUID) is usually coupled to a dielectric resonator that is a standard 10× 10×1 mm^3 SrTiO3 ...Nowadays, the high-critical-temperature radio frequency superconducting quantum interference device (high-Tc rf SQUID) is usually coupled to a dielectric resonator that is a standard 10× 10×1 mm^3 SrTiO3 (STO) substrate with a YBa2Cu3O7-δ (YBCO) thin-film flux focuser deposited on it. Recently, we have simulated a dielectric resonator for the high-Tc rf SQUID by using the ANSOFT High Frequency Structure Simulator (ANSOFT HFSS). We simulate the resonant frequency and the quality factor of our dielectric resonator when it is unloaded or matches a 50-Ω impedance. The simulation results are quite close to the practical measurements. Our study shows that ANSOFT HFSS is quite suitable for simulating the dielectric resonator used for the high-Tc rf SQUID. Therefore, we think the ANSOFT HFSS can be very helpful for investigating the characteristics of dielectric resonators for high-Tc rf SQUIDs.展开更多
By using the first-principles calculations, the electronic properties of graphene nanoribbon (GNR) doped by boron/nitrogen (B/N) bonded pair are investigated. It is found that B/N bonded pair tends to be doped at ...By using the first-principles calculations, the electronic properties of graphene nanoribbon (GNR) doped by boron/nitrogen (B/N) bonded pair are investigated. It is found that B/N bonded pair tends to be doped at the edges of GNR and B/N pair doping in GNR is easier to carry out than single B doping and unbonded B/N co-doping in GNR. The electronic structure of GNR doped by B/N pair is very sensitive to doping site besides the ribbon width and chirality. Moreover, B/N pair doping can selectively adjust the energy gap of armchair GNR and can induce the semimetal-semiconductor transmission for zigzag GNR. This fact may lead to a possible method for energy band engineering of GNRs and benefit the design of graphene electronic device.展开更多
By introducing the distribution of the light energy density in GaN-based light-emitting diode (LED),theLED model based on the incoherent regime and the light extraction efficiency are investigated.The energy density a...By introducing the distribution of the light energy density in GaN-based light-emitting diode (LED),theLED model based on the incoherent regime and the light extraction efficiency are investigated.The energy density asa function of the angle of incidence is calculated to demonstrate the mechanism of the light extraction.The deviationbetween the tendencies of the transmissivity of the output layer and the extraction efficiency is also demonstrated.展开更多
We report the enhancement of the light extraction of InGaN-based green light emitting diodes (LEDs) via the interface nanotexturing. The texture consists of high-density nanocraters on the surface of a sapphire subs...We report the enhancement of the light extraction of InGaN-based green light emitting diodes (LEDs) via the interface nanotexturing. The texture consists of high-density nanocraters on the surface of a sapphire substrate with an in situ etching. The width of nanocraters is about 0.5 μm and the depth is around 0.1 μm. It is demonstrated that the LEDs with interface texture exhibit about a 27% improvement in luminance intensity, compared with standard LEDs. High power InGaN-based green LEDs are obtained by using the interface nanotexture. An optical ray-tracing simulation is performed to investigate the effect of interface nanotexture on light extraction.展开更多
We present a grating model of two-dimensional (2D) rigorous coupled wave analysis (RCWA) to study top diffraction gratings on light-emitting diodes (LEDs). We compare the integrated-transmission of the non-grati...We present a grating model of two-dimensional (2D) rigorous coupled wave analysis (RCWA) to study top diffraction gratings on light-emitting diodes (LEDs). We compare the integrated-transmission of the non-grating, rectangular-grating, and triangular-grating cases for the same grating period of 6 μm, and show that the triangular grating has the best performance. For the triangular grating with 6-μm period, the LED achieves the highest light transmission at 6-μm grating bottom width and 2.9-μm grating depth. Compared with the non-grating case, the optimized light transmission improvement is about 74.6%. The simulation agrees with the experimental data of the thin polymer grating encapsulated flip-chip (FC) GaN-based LEDs for the light extraction improvement.展开更多
We have fabricated a series of square-lattice hole photonic crystal (2PhC) arrays simultaneously at the un-current injection region on a special sample of GaN based light emitting diode (LED) by using focus ion beam m...We have fabricated a series of square-lattice hole photonic crystal (2PhC) arrays simultaneously at the un-current injection region on a special sample of GaN based light emitting diode (LED) by using focus ion beam milling (FIBM). The lattice constants of the 2PhC arrays vary from 230 to 1500 nm,while the 2PhC arrays have a constant area of about 9 μm×18 μm and a fixed depth of 150±10 nm which approaches but does not penetrate the active layer. Microscopic electroluminescence images and spectral measurements consistently confirm that the top emitting intensities from different 2PhCs are all enhanced compared with the unpatterned region. It is demonstrated that the output coupling of propagating guided modes is realized by the diffracted transmission of the 2PhCs. The enhancement factors of the guided modes compared with the unpatterned region are plotted as function of the lattice constant. It is found that the highest enhancements for the extraction of guided modes were obtained for the lattice constant of 230 and 460 nm of 2PhCs. The results are discussed by the two-dimensional rigorous coupled wave analysis (RCWA).展开更多
We investigate the transverse mode pattern in GaN quantum-well (QW) laser diode (LD) by numerical calculation. We optimize the current GaN LD structure by varying the n-GaN layer thickness. The n-type GaN layer is...We investigate the transverse mode pattern in GaN quantum-well (QW) laser diode (LD) by numerical calculation. We optimize the current GaN LD structure by varying the n-GaN layer thickness. The n-type GaN layer is an important factor to determine the optical mode. Finally, we discuss the lasing performance of the GaN LD based on the transverse optical modes.展开更多
基金Project supported by the Wang Faculty Fellowship at Peking University,Beijing,China,2006-2007 through California State University (CSU) International Programs USAthe National Basic Research Program of China (Grant No 2007CB307004)+1 种基金the National High Technology Research and Development Program of China (Grant No 2006AA03A113)the National Natural Science Foundation of China (Grant Nos 60276034,60577030 and 60607003)
文摘We have investigated the transverse mode pattern and the optical field confinement factor of gallium nitride (GaN) laser diodes (LDs) theoretically. For the particular LD structure, composed of approximate 4 μm thick n-GaN substrate layer, the maximum optical confinement factor was found to be corresponding to the 5^th order transverse mode, the so-called lasing mode. Moreover, the value of the maximum confinement factor varies periodically when increasing the n-side GaN layer thickness, which simultaneously changes and increases the oscillation mode order of the GaN LD caused by the effects of mode coupling. The effects of the thickness and the average composition of Al in the AlGaN/GaN superlat.tice on the optical confinement factor are also presented. Finally, the mode coupling and optimization of the layers in the GaN-based LD are discussed.
基金Project supported by the National Basic Research Program of China (Grant No.2006CB601007)the National Natural Science Foundation of China (Grant No.10674006)+1 种基金the National High Technology Research and Development Program of China (Grant No.2007AA03Z238)the Foundation of the State Key Laboratory of Information Control Technology for Communication System,China (Grant No.9140C1304010803)
文摘Nowadays, the high-critical-temperature radio frequency superconducting quantum interference device (high-Tc rf SQUID) is usually coupled to a dielectric resonator that is a standard 10× 10×1 mm^3 SrTiO3 (STO) substrate with a YBa2Cu3O7-δ (YBCO) thin-film flux focuser deposited on it. Recently, we have simulated a dielectric resonator for the high-Tc rf SQUID by using the ANSOFT High Frequency Structure Simulator (ANSOFT HFSS). We simulate the resonant frequency and the quality factor of our dielectric resonator when it is unloaded or matches a 50-Ω impedance. The simulation results are quite close to the practical measurements. Our study shows that ANSOFT HFSS is quite suitable for simulating the dielectric resonator used for the high-Tc rf SQUID. Therefore, we think the ANSOFT HFSS can be very helpful for investigating the characteristics of dielectric resonators for high-Tc rf SQUIDs.
基金supported by the Science and Technology Program of Hunan Province,China (Grant No.2010DFJ411)the Natural Science Foundation of Hunan Province,China (Grant No.11JJ4001)the Fundamental Research Funds for the Central Universities,China (Grant No.201012200053)
文摘By using the first-principles calculations, the electronic properties of graphene nanoribbon (GNR) doped by boron/nitrogen (B/N) bonded pair are investigated. It is found that B/N bonded pair tends to be doped at the edges of GNR and B/N pair doping in GNR is easier to carry out than single B doping and unbonded B/N co-doping in GNR. The electronic structure of GNR doped by B/N pair is very sensitive to doping site besides the ribbon width and chirality. Moreover, B/N pair doping can selectively adjust the energy gap of armchair GNR and can induce the semimetal-semiconductor transmission for zigzag GNR. This fact may lead to a possible method for energy band engineering of GNRs and benefit the design of graphene electronic device.
文摘By introducing the distribution of the light energy density in GaN-based light-emitting diode (LED),theLED model based on the incoherent regime and the light extraction efficiency are investigated.The energy density asa function of the angle of incidence is calculated to demonstrate the mechanism of the light extraction.The deviationbetween the tendencies of the transmissivity of the output layer and the extraction efficiency is also demonstrated.
文摘We report the enhancement of the light extraction of InGaN-based green light emitting diodes (LEDs) via the interface nanotexturing. The texture consists of high-density nanocraters on the surface of a sapphire substrate with an in situ etching. The width of nanocraters is about 0.5 μm and the depth is around 0.1 μm. It is demonstrated that the LEDs with interface texture exhibit about a 27% improvement in luminance intensity, compared with standard LEDs. High power InGaN-based green LEDs are obtained by using the interface nanotexture. An optical ray-tracing simulation is performed to investigate the effect of interface nanotexture on light extraction.
基金the Department of the Navy,Office of Naval Research,under Award # N00014-07-1-1152,USAthe"Chunhui"Exchange Research Fellow 2008,Ministry of Education of China,the National"973"Program of China(No.2007CB307004)+1 种基金the National"863"Program of China(No.2006AA03A113)and the National Natural Science Foundation of China(No.60276032,60577030,and 60607003)
文摘We present a grating model of two-dimensional (2D) rigorous coupled wave analysis (RCWA) to study top diffraction gratings on light-emitting diodes (LEDs). We compare the integrated-transmission of the non-grating, rectangular-grating, and triangular-grating cases for the same grating period of 6 μm, and show that the triangular grating has the best performance. For the triangular grating with 6-μm period, the LED achieves the highest light transmission at 6-μm grating bottom width and 2.9-μm grating depth. Compared with the non-grating case, the optimized light transmission improvement is about 74.6%. The simulation agrees with the experimental data of the thin polymer grating encapsulated flip-chip (FC) GaN-based LEDs for the light extraction improvement.
基金supported by the National Basic Research Program of China ("973" Project) (Grant Nos.2007CB307004,2006CB921607)the National Natural Science Foundation of China (Grant Nos.60776041,60976009,U0834001)
文摘We have fabricated a series of square-lattice hole photonic crystal (2PhC) arrays simultaneously at the un-current injection region on a special sample of GaN based light emitting diode (LED) by using focus ion beam milling (FIBM). The lattice constants of the 2PhC arrays vary from 230 to 1500 nm,while the 2PhC arrays have a constant area of about 9 μm×18 μm and a fixed depth of 150±10 nm which approaches but does not penetrate the active layer. Microscopic electroluminescence images and spectral measurements consistently confirm that the top emitting intensities from different 2PhCs are all enhanced compared with the unpatterned region. It is demonstrated that the output coupling of propagating guided modes is realized by the diffracted transmission of the 2PhCs. The enhancement factors of the guided modes compared with the unpatterned region are plotted as function of the lattice constant. It is found that the highest enhancements for the extraction of guided modes were obtained for the lattice constant of 230 and 460 nm of 2PhCs. The results are discussed by the two-dimensional rigorous coupled wave analysis (RCWA).
基金supported by the"973"Program of China(No.TG2007CB307004)the"863"Program of China(No.863-2006AA03A113)the National Natural Science Foundation of China(No.60276034,60577030,and 60607003).
文摘We investigate the transverse mode pattern in GaN quantum-well (QW) laser diode (LD) by numerical calculation. We optimize the current GaN LD structure by varying the n-GaN layer thickness. The n-type GaN layer is an important factor to determine the optical mode. Finally, we discuss the lasing performance of the GaN LD based on the transverse optical modes.