Sensitivity study of the SiGe heterojunction bipolar transistor single event effect based on pulsed laser and technology computer-aided design simulation

The single event effect of a silicon–germanium heterojunction bipolar transistor(SiGe HBT) was thoroughly investigated. By considering the worst bias condition, the sensitive area of the proposed device was scanned with a pulsed laser.With variation of the collector bias and pulsed laser incident energy, the single event transient of the SiGe HBT was studied.Moreover, the single event transient produced by laser irradiation at a wavelength of 532 nm was more pronounced than at a wavelength of 1064 nm. Finally, the impact of the equivalent linear energy transfer of the 1064 nm pulsed laser on the single event transient was qualitatively examined by performing technology computer-aided design simulations, and a good consistency between the experimental data and the simulated outcomes was attained.

Sensitivity investigation of 100-MeV proton irradiation to SiGe HBT single event effect

The single event effect(SEE) sensitivity of silicon–germanium heterojunction bipolar transistor(Si Ge HBT) irradiated by 100-Me V proton is investigated. The simulation results indicate that the most sensitive position of the Si Ge HBT device is the emitter center, where the protons pass through the larger collector-substrate(CS) junction. Furthermore, in this work the experimental studies are also carried out by using 100-Me V proton. In order to consider the influence of temperature on SEE, both simulation and experiment are conducted at a temperature of 93 K. At a cryogenic temperature, the carrier mobility increases, which leads to higher transient current peaks, but the duration of the current decreases significantly.Notably, at the same proton flux, there is only one single event transient(SET) that occurs at 93 K. Thus, the radiation hard ability of the device increases at cryogenic temperatures. The simulation results are found to be qualitatively consistent with the experimental results of 100-Me V protons. To further evaluate the tolerance of the device, the influence of proton on Si Ge HBT after gamma-ray(^(60)Coγ) irradiation is investigated. As a result, as the cumulative dose increases, the introduction of traps results in a significant reduction in both the peak value and duration of the transient currents.

Dynamics and rebound behavior analysis of flexible tethered satellite system in deployment and station-keeping phases

The tether deployment of a tethered satellite system involves the consideration of complex dynamic properties of the tether,such as large deformation,slack,and even rebound,and therefore,the dynamic modelling of the tether is necessary for performing a dynamic analysis of the system.For a variablelength tether element,the absolute nodal coordinate formulation(ANCF)in the framework of the arbitrary Lagrange-Euler(ALE)description was used to develop a precise dynamic model of a tethered satellite.The model considered the gravitational gradient force and Coriolis force in the orbital coordinate frame,and it was validated through numerical simulation.In the presence of dynamic constraints,a deployment velocity of the tether was obtained by an optimal procedure.In the simulation,rebound behavior of the tethered satellite system was observed when the ANCF-ALE model was employed.Notably,the rebound behavior cannot be predicted by the traditional dumbbell model.Furthermore,an improved optimal deployment velocity was developed.Simulation results indicated that the rebound phenomenon was eliminated,and smooth deployment as well as a stable state of the station-keeping process were achieved.Additionally,the swing amplitude in the station-keeping phase decreased when a deployment strategy based on the improved optimal deployment velocity was used.