Conceptual design of the three-dimensional magnetic field configuration relevant to the magnetopause reconnection in the SPERF

A new ground-based expenmental device,the Space Plasma Environment Research Facility（SPERF）,is being designed at Harbin Institute of Technology in China,with Asymmetric REconnection eXperiment-3 Dimensional（AREX-3D） as one of the experimental components to study the asymmetric reconnection dynamics relevant to the interaction between the interplanetary and magnetospheric plasmas.The asymmetry in the designed magnetic reconnection process not only refers to the distinct plasma parameters designed for the two upstream regions across the current sheet,but also refers to the inhomogeneity in the direction along the current sheet resulting from the designed 3D magnetic field geometry.These two asymmetries are fundamental features of the reconnection process at the Earth＇s magnetopause.In experiment,the reconnection process is driven by a set of flux cores through coil-currentramp-up from the ＇magnetosheath-side＇ to interact with a dipole magnetic field generated by the Dipole Research Experiment（DREX） coil on the ＇magnetosphere-side＇.The AREX-3D will be able to investigate a range of important reconnection issues in 3D magnetic field geometry that is relevant to the Earth＇s magnetopause.A wide range of plasma parameters can be achieved through inductive plasma generation with flux cores on the ＇magnetosheath-side＇ and electron cyclotron resonance（ECR） with microwave sources on the ＇magnetosphere-side＇,e.g.high（low）plasma density at experimental magnetosheath（dipole） side.Different reconnection regimes and geometries can be produced by adjusting plasma parameters and coil setups as well as coil current waveforms.The three-dimensional magnetic field configurations in the SPERF relevant to the dayside magnetopause reconnection are discussed in detail.

Feature matching based on geometric constraints in weakly calibrated stereo views of curved scenes

The identification of the correspondences of points of views is an important task. A new feature matching algorithm for weakly calibrated stereo images of curved scenes is proposed, based on mere geometric constraints. After initial correspondences are built via the epipolar constraint, many point-to-point image mappings called homographies are set up to predict the matching position for feature points. To refine the predictions and reject false correspondences, four schemes are proposed. Extensive experiments on simulated data as well as on real images of scenes of variant depths show that the proposed method is effective and robust.

A continuous analytic channel potential solution to doped symmetric double-gate MOSFETs from the accumulation to the strong-inversion region

A continuous yet analytic channel potential solution is proposed for doped symmetric double-gate （DG） MOSFETs from the accumulation to the strong-inversion region. Analytical channel potential relationship is derived from the complete 1-D Poisson equation physically, and the channel potential solution of the DG MOSFET is obtained analytically. The extensive comparisons between the presented solution and the numerical simulation illustrate that the solution is not only accurate and continuous in the whole operation regime of DG MOSFETs, but also valid to wide doping concentration and various geometrical sizes, without employing any fitting parameter.

One-dimensional continuous analytic potential solution to generic oxide-silicon-oxide system

A one-dimensional continuous analytic potential solution to a generic oxide-silicon^xide system is developed. With the analytic solution, the potential distribution in the silicon film is predicted. A physics-based relation between surface potentials is also derived and then applied to the generic oxide-silicon-oxide metal oxide-semiconductor field-effect transistors （MOSFETs） for the calculation of surface potentials

Clear correspondence between gated-diode R-G current and performance degradation of SOI n-MOSFETs after F-N stress tests

A clear correspondence between the gated-diode generation-recombination （R-G） current and the performance degradation of an SOI n-channel MOS transistor after F-N stress tests has been demonstrated. Due to the increase of interface traps after F-N stress tests, the R-G current of the gated-diode in the SOI-MOSFET architecture increases while the performance characteristics of the MOSFET transistor such as the saturation drain current and sub-threshold slope are degraded. From a series of experimental measurements of the gated-diode and SOI-MOSFET DC characteristics, a linear decrease of the drain saturation current and increase of the threshold voltage as well as a like-line rise of the sub-threshold swing and a corresponding degradation in the trans-conductance are also observed. These results provide theoretical and experimental evidence for us to use the gated-diode tool to monitor SOI-MOSFET degradation.

Diode parameter extraction by a linear cofactor difference operation method

The linear cofactor difference operator（LCDO） method,a direct parameter extraction method for general diodes,is presented.With the developed LCDO method,the extreme spectral characteristic of the diode voltage-current curves is revealed,and its extreme positions are related to the diode characteristic parameters directly.The method is applied to diodes with different sizes and temperatures,and the related characteristic parameters,such as reverse saturation current,series resistance and non-ideality factor,are extracted directly.The extraction result shows good agreement with the experimental data.

Forward gated-diode method for parameter extraction of MOSFETs

The forward gated-diode method is used to extract the dielectric oxide thickness and body doping concentration of MOSFETs, especially when both of the variables are unknown previously. First, the dielectric oxide thickness and the body doping concentration as a function of forward gated-diode peak recombination-generation （R-G） current are derived from the device physics. Then the peak R-G current characteristics of the MOSFETs with different dielectric oxide thicknesses and body doping concentrations are simulated with ISE-Dessis for parameter extraction. The results from the simulation data demonstrate excellent agreement with those extracted from the forward gated-diode method.

Application of WebGIS & Knowledge Based on Forest Pests Forecasting

To improve the accuracy and effectiveness of forest pests forecasting,based on current forecast model,integrating the database and WebGIS technology,a practical design and construction approach of forest pest knowledge base was put forward,and the forecast system on Web application framework was realized with satisfactory empirical results.

A semi-empirical analytic model for threshold voltage instability in MOSFETs with high-k gate stacks

A semi-empirical analytic model for the threshold voltage instability of a MOSFET is derived from Shockley-Read-Hall （SRH） statistics to account for the transient charging effects in a MOSFET high-k gate stack. Starting from the single energy level and single trap assumption, an analytical expression for the filled trap density in terms of dynamic time is derived from SRH statistics. The semi-empirical analytic model for the threshold voltage instability is developed based on MOSFET device physics between the threshold voltage and the induced trap density. The obtained model is also verified by extensive experimental data of trapping and de-trapping stress from different high-k gate configurations.