Design and Simulation of Silicon-based NiCrAu MEMS Torsion Micromirror with Tilted Back-electrode

Torsion micromirror is a key structure of optical devices in micro-electro-mechanical system(MEMS), such as MEMS optical switches, MEMS variable optical attenuator, MEMS scanning micromirror array and so on. A silicon-based NiCrAu MEMS torsion micromirror is theoretically analyzed. It is shown that in order to have 15° rotation, the driven voltage should be about 20V and the thickness of the supporting beam must be controlled in the range of submicron orders of magnitude. This very thin beam makes the structure more unstable and unreliable, and also makes the fabrication more complicated. Based on parallel back-electrode analysis and testing, a tilted back-electrode has been designed to replace the parallel back-electrode in order to decrease the driven voltage and difficulty of fabricating processing. By theoretical analysis and simulation, a conclusion can be drown that the thickness can be improved from submicron to micron by using tilted back-electrode when using the same driven voltage. Tilted back-electrode is very effective to improve the stability and reliability of the micromirror structure.

Effect of Film Thickness on Properties of a-Si∶H Films

The a-Si∶H films with different thickness smaller than 1 μm were deposited by plasma enhanced chemical vapor deposition (PECVD) under the optimum deposition conditions. The effect of different thickness on film properties is analyzed.The results show that,with the increase of the film thickness,the dark conductivity, photoconductivity and threshold voltage increase, the optical gap and peak ratio of TA to TO in the Raman spectra decrease, the refractive index keeps almost constant, and the optical absorption coefficient and current ratio of on/off state first maximize and then reduce.

Thiazoloisoindigo-based Polymer Semiconductors: Synthesis,Structure-Property Relationship, Charge Carrier Polarity, and Field-Effect Transistor Performance

Developing new polymeric semiconductors with excellent device performance is essential for organic electronics. Herein, we synthesized two new thiazoloisoindigo(Tz II)-based polymers, namely, P(Tz II-d Th-d Th) and P(Tz II-d Th-d Tz), by copolymerizing thiophene-flanked Tz II with bithiophene and bithiazole, respectively. Owing to the more electron-deficient nature of bithiazole than bithiophene, P(Tz II-d Th-d Tz)possesses deeper LUMO/HOMO levels of-3.45/-5.47 e V than P(Tz II-d Th-d Th)(-3.34/-5.32 e V). The organic field-effect transistor(OFET) devices based on P(Tz II-d Th-d Th) exhibited p-type behaviors with an average hole mobility value as high as 1.43 cm^(2)·V^(-1)·s^(-1), while P(Tz II-d Th-d Tz)showed typical ambipolar characteristics with average hole and electron mobilities of 0.38 and 0.56 cm^(2)·V^(-1)·s^(-1). In addition, we compared the performances of both polymers with other Tz II-based polymers reported in our previous work, and showed that the charge carrier polarity can be manipulated by adjusting the number of the thiophene units between the acceptor unit. As the increase of the number of thiophene rings,charge carrier polarity shifts from electron-dominated ambipolar transport to hole-dominated ambipolar transport and then to unipolar hole transport in OFETs, which provides an effective molecular design strategy for further optimization of polymer OFET performance.