Determination of the Series Resistance of a Series Vertical-Junction Silicon (N+/P/P+) Solar Cell under Polychromatic Illumination and Magnetic Field: Effect of Optimum Thickness

By solving the magneto-transport equation for excess minority charge carriers in the base of the series vertical-junction silicon cell, the phenomenological parameters of the cell can be determined from the boundary conditions. Photocurrent density and photovoltage are determined for each value of applied magnetic field and corresponding optimum thickness, to establish the current-voltage characteristic (Jph(Sf, Sb, z, B, Hop)-Vph(Sf, Sb, z, B, Hop) of the silicon cell under polychromatic illumination. This study will make it possible to reduce the material used (by reducing the optimum thickness), which will help to lower prices. It will also enable us to reduce betting effects (lower series resistance), thereby boosting solar cell efficiency.

Bifacial Silicon Solar Cell Steady Photoconductivity under Constant Magnetic Field and Junction Recombination Velocity Effects

The paper reported a theoretical study on the photoconductivity of a bifacial silicon solar cell under polychromatic illumination and a constant magnetic field effect. By use of the continuity equation in the base of the solar cell maintained in a constant temperature at 300 K, an expression of the excess minority carriers’ density was determined according to the applied magnetic field, the base depth and the junction recombination velocity. From the expression of the minority carriers’ density, the photoconductivity of the solar cell was deduced and which allowed us to predict some recombination phenomena, the use of such solar cell in optoelectronics. The profile of the photoconductivity also permitted us to utilize a linear model in order to determine an electrical capacitance that varied with magnetic field.

Silicon Solar Cell Space Charge Region and Capacitance Behavior under Electric Field

This paper investigates theoretically the behavior of the space charge region of a silicon solar cell and its associated capacitance under the effect of an external electric field. The purpose of this work is to show that under illumination the solar cell’s space charge region width varies with both operating point and the external induced electric field and how the solar cell capacitance varies with the space charge region width. Based on a 1D modelling of the quasi-neutral p-base, the space charge region width is determined and the associated capacitance is calculated taking into account the external electric field and the junction dynamic velocity. Based on the above calculations and simulations conducted with Mathcad, we confirmed the linear dependence of the inverse capacitance with space charge region width for thin space charge region and we exhibit an exponential dependence for large space charge region.

Determination of the Electrical Parameters of a Solar Cell in Steady State

Photovoltaic solar energy can be obtained by using several types of technologies, including silicon solar cells. The characterization of its solar cells makes it possible to know them better. This article presents, on the one hand, the work that has been carried out on these cells. On the other hand, a theoretical study of the cell under illumination using Lambert’s W function. On the basis of the electrical parameters provided by the manufacturer, the parameters such as the series and shunt resistances and the electrical quantities such as the photocurrent and the photovoltage, are determined and studied according to the ideality factor of the diode. From the results obtained the shunt resistance increases when the ideality factor increases, the series resistance decreases very weakly.

Performance Study of a Quadratic Boost Converter

Energy is the driving force behind all economic and industrial development. Africa is the least advanced continent in terms of energy consumption and production. Paradoxically, it is the sunniest continent, which is why our objective is to exploit this energy potential in order to produce and use sufficient energy. To achieve this, we are carrying out a series of studies aimed at developing a device capable of converting solar photovoltaic energy into electrical energy. This device is a two-stage converter, the first of which is a quadratic boost and the second a full bridge. Initially, this paper is devoted to studying the performance of the quadratic boost.

Experimental Study of a Quadratic Boost: The Cascaded Connected Single Switch

The quadratic boost is studied under its real model. The equations, of the continuous conduction mode, descriptive of this model are established. From these equations, the expressions of the voltage gain and the efficiency are extracted. These two quantities are plotted as a function of the duty cycle in order to appreciate them in different operating points of the transistor. The values of the different components have also been extracted for the fabrication of a prototype of the converter. Thanks to a set of experimental measurements at the input as well as at the output of the prototype converter, the voltage gain and the efficiency could also be observed. These were also plotted for different loads to observe converter behavior. The theoretical curves were compared with the experimental curves which allowed to validate the proposed mathematical models on a large range of duty cycles.

A Junction Electric Field Determination of a Bifacial Silicon Solar Cell under a Constant Magnetic Field Effect by Using the Photoconductivity Method

In this work, a theory based on the steady photoconductivity method, of a bifacial silicon solar cell under polychromatic illumination and a magnetic field effect, is presented. The resolution of the continuity equation in the base of the solar cell, allowed us to establish the expression of the minority carriers’ density from which the photoconductivity, the photocurrent density, the photovoltage and the solar output power as function of the junction recombination velocity and the applied magnetic field, were deduced. From I-V and P-V characteristics of the solar cell, optimal photovoltage and optimal photocurrent obtained at the maximum power point corresponding to a given operating point which is correlated to an optimal junction recombination velocity, were determined according to the magnetic field. By means of the relation between the photocurrent density and the photoconductivity, the junction electric field has been determined at a given optimal junction recombination velocity.

Performance Analysis of a Boost Converter with Components Losses

A theoretical study of a conventional boost converter is presented. Based on the real behavior of the components, two models of the boost converter are introduced: one dealing only with losses through inductor and capacitor and another taking into account switching losses in addition to resistive ones. From these two models, the detailed analytical expressions of both voltage gain factor and conversion efficiency are established taking into account the losses through parasitic resistances and switching losses. The behavior of the converter is then analyzed for each model by simulation for the voltage gain factor and the conversion efficiency.

Quadratic Boost Converter: An Analysis with Passive Components Losses

The Cascaded Connected Single Switch Quadratic Boost (C2S2-QB) is studied first from its ideal model, then with semi-real model taking into account resistive losses through the inductors and the capacitor. The continuous conduction mode equations, describing these different models are established, taking into account losses through passive components. From these equations, the voltage gain and the efficiency are determined for the semi-real model. The voltage gain and the efficiency are then analyzed versus duty cycle and the influence of passive component losses on the performance of the quadratic boost converter is carried out for the semi-real model. It has been showed that the quality of the passive components of a converter plays an important role in the quality of the conversion. However, not all passives components affect the converter in the same way.