Using V2O3 and MoO3 powders as precursors,a novel preparation method,i.e.,the so-called inorganic solgel,is developed to synthesize Mo^6+-doped vanadium dioxide(VO2) thin films.The structure,valence state,phase transi...Using V2O3 and MoO3 powders as precursors,a novel preparation method,i.e.,the so-called inorganic solgel,is developed to synthesize Mo^6+-doped vanadium dioxide(VO2) thin films.The structure,valence state,phase transition temperature and magnitude of resistivity change are characterized by x-ray diffraction,x-ray photoelectron spectroscopy and the four-point equipment.The results show that the main chemical composition of doped thin films was VO2,the sturcture of MoO3 in doped thin films did not change,and the phase transition temperature of doped thin films was obviously lowered with the increasing MoO3 doped concentration,but the magnitude of resistivity change was also decreased.However.so long as MoO3 doped concentration was not more than 5wt%.,the magnitude of resistivity change of doped thin films still reached more 2 orders.The analysis show that MoO3 dissolved in crystal structure of VO2 formed the donor defect MOv^x and then reduced the forbidden band width,which lowered the phase transition temperature,Consequently it was widened applications of the VO2 thin films.展开更多
Mo is difficult to sinter densely at a relatively low temperature due to its high melting point. In the present paper,by adding different weight contents of Ni and Cu additives, Mo alloys have been densified at 1473 K...Mo is difficult to sinter densely at a relatively low temperature due to its high melting point. In the present paper,by adding different weight contents of Ni and Cu additives, Mo alloys have been densified at 1473 K for an hour byhot-pressing method, and the optimum contents of Cu and Ni additives have been acquired: when the contents of Niand Cu are 3 and 2 wt pct respectively, the relative density of the sample reaches the maximum value. It was foundthat when the Ni-Cu solid solution was added into Mo alloys. the achieved density is higher than the case of Ni andCu additives. The experimental results indicate that, Ni and Cu play different roles in the process of sintering, theNi-Cu solid solution has the same function as Ni and Cu additives in the course of sintering Mo alloys, It shows moreactivating sintering feature for Mo than the Ni and Cu additives.展开更多
We present a scheme for preparing remotely a three-particle pure entangled state via entanglement swapping,and then we directly generalize it to the multiparticle case. It is shown that by using N pairs of bipartite E...We present a scheme for preparing remotely a three-particle pure entangled state via entanglement swapping,and then we directly generalize it to the multiparticle case. It is shown that by using N pairs of bipartite EPR states as the quantum channel, remote preparation of some specially chosen N-particle pure entangled states can be achieved faithfully with an N-particle orthonormal basis measurement and only N bits of classical information.展开更多
A novel azo derivative,α-（2-azoxyisoxazole)-β-diketone derivative (ADD),and its copper (Ⅱ） and nickel （Ⅱ） complex (CuADD and NiADD) films have been prepared respectively by spin-coated method.The absorption sp...A novel azo derivative,α-（2-azoxyisoxazole)-β-diketone derivative (ADD),and its copper (Ⅱ） and nickel （Ⅱ） complex (CuADD and NiADD) films have been prepared respectively by spin-coated method.The absorption spectra of the films on a K9 glass substrate in the 300-800 nm wavelength region have been measured.The optical constants (complex refractive index N=n+iκ） and thickness of the complex films on a single-crystal silicon substrate in the 300-600nm wavelength region have been investigated on an improved rotating analyser-polariser (RAP) type of scanning ellipsometer,and the dielectric constants ε（ε=ε1+iε2),absorption coefficients α as well as reflectance R of the films were calculated.It is found that the absorption maxima of the ADD,CuADD and NiADD films are at 324nm,372nm and 385nm,respectively,and small absorption values and steep absorption band edges of the CuADD and NiADD films are observed at the 405nm side;The CuADD and NiADD films give high n values of 2.08 and 1.98,and low κ values of 0.2 and 0.28,respectively,at 405nm,and their thicknesses are in the range of 130-150nm;the high reflectivity of 58.5% and 45.5% of the CuADD and NiADD films with Ag as a reflective layer were obtained at the film thicknesses of 70 nm and 80nm respectively.These results show that the novel CuADD and NiADD films seem to be a very promising organic recording material for the next generation of high density digital versatile disc-recordable (HD-DVD-R) systems that use a high numerical aperture of 0.85 at 405nm wavelength.展开更多
文摘Using V2O3 and MoO3 powders as precursors,a novel preparation method,i.e.,the so-called inorganic solgel,is developed to synthesize Mo^6+-doped vanadium dioxide(VO2) thin films.The structure,valence state,phase transition temperature and magnitude of resistivity change are characterized by x-ray diffraction,x-ray photoelectron spectroscopy and the four-point equipment.The results show that the main chemical composition of doped thin films was VO2,the sturcture of MoO3 in doped thin films did not change,and the phase transition temperature of doped thin films was obviously lowered with the increasing MoO3 doped concentration,but the magnitude of resistivity change was also decreased.However.so long as MoO3 doped concentration was not more than 5wt%.,the magnitude of resistivity change of doped thin films still reached more 2 orders.The analysis show that MoO3 dissolved in crystal structure of VO2 formed the donor defect MOv^x and then reduced the forbidden band width,which lowered the phase transition temperature,Consequently it was widened applications of the VO2 thin films.
基金Supported by the National High Technology Research and Development Program of China under Grant No 2014AA041901, the NSAF Foundation of National Natural Science Foundation of China under Grant No U1330134, and the National Natural Science Foundation of China under Grant No 61308024.
基金This research is sponsored by the National Natural Science Foundation of China under grant No.50171049.
文摘Mo is difficult to sinter densely at a relatively low temperature due to its high melting point. In the present paper,by adding different weight contents of Ni and Cu additives, Mo alloys have been densified at 1473 K for an hour byhot-pressing method, and the optimum contents of Cu and Ni additives have been acquired: when the contents of Niand Cu are 3 and 2 wt pct respectively, the relative density of the sample reaches the maximum value. It was foundthat when the Ni-Cu solid solution was added into Mo alloys. the achieved density is higher than the case of Ni andCu additives. The experimental results indicate that, Ni and Cu play different roles in the process of sintering, theNi-Cu solid solution has the same function as Ni and Cu additives in the course of sintering Mo alloys, It shows moreactivating sintering feature for Mo than the Ni and Cu additives.
文摘We present a scheme for preparing remotely a three-particle pure entangled state via entanglement swapping,and then we directly generalize it to the multiparticle case. It is shown that by using N pairs of bipartite EPR states as the quantum channel, remote preparation of some specially chosen N-particle pure entangled states can be achieved faithfully with an N-particle orthonormal basis measurement and only N bits of classical information.
文摘A novel azo derivative,α-（2-azoxyisoxazole)-β-diketone derivative (ADD),and its copper (Ⅱ） and nickel （Ⅱ） complex (CuADD and NiADD) films have been prepared respectively by spin-coated method.The absorption spectra of the films on a K9 glass substrate in the 300-800 nm wavelength region have been measured.The optical constants (complex refractive index N=n+iκ） and thickness of the complex films on a single-crystal silicon substrate in the 300-600nm wavelength region have been investigated on an improved rotating analyser-polariser (RAP) type of scanning ellipsometer,and the dielectric constants ε（ε=ε1+iε2),absorption coefficients α as well as reflectance R of the films were calculated.It is found that the absorption maxima of the ADD,CuADD and NiADD films are at 324nm,372nm and 385nm,respectively,and small absorption values and steep absorption band edges of the CuADD and NiADD films are observed at the 405nm side;The CuADD and NiADD films give high n values of 2.08 and 1.98,and low κ values of 0.2 and 0.28,respectively,at 405nm,and their thicknesses are in the range of 130-150nm;the high reflectivity of 58.5% and 45.5% of the CuADD and NiADD films with Ag as a reflective layer were obtained at the film thicknesses of 70 nm and 80nm respectively.These results show that the novel CuADD and NiADD films seem to be a very promising organic recording material for the next generation of high density digital versatile disc-recordable (HD-DVD-R) systems that use a high numerical aperture of 0.85 at 405nm wavelength.
