Two-dimensional(2D)ferromagnets with out-of-plane(OOP)magnetic anisotropy are potential candidates for realizing the next-generation memory devices with ultra-low power consumption and high storage density.However,a s...Two-dimensional(2D)ferromagnets with out-of-plane(OOP)magnetic anisotropy are potential candidates for realizing the next-generation memory devices with ultra-low power consumption and high storage density.However,a scalable approach to synthesize 2D magnets with OOP anisotropy directly on the complimentary metal-oxide semiconductor(CMOS)compatible substrates has not yet been mainly explored,which hinders the practical application of 2D magnets.This work demonstrates a cascaded space confined chemical vapor deposition(CS-CVD)technique to synthesize 2D FexGeTe_(2) ferromagnets.The weight fraction of iron(Fe)in the precursor controls the phase purity of the as-grown FexGeTe2.As a result,high-quality Fe_(3)GeTe_(2) and Fe_(5)GeTe_(2) flakes have been grown selectively using the CS-CVD technique.Curie temperature(Tc)of the as-grown FexGeTe2 can be up to-280 K,nearly room temperature.The thickness and temperature-dependent magnetic studies on the Fe_(5)GeTe_(2) reveal a 2D Ising to 3D XY behavior.Also,Terahertz spectroscopy experiments on Fe_(5)GeTe_(2) display the highest conductivity among other FexGeTe_(2) 2D magnets.The results of this work indicate a scalable pathway for the direct growth and integration of 2D ternary magnets on CMOS-based substrates to develop spintronic memory devices.展开更多
基金supported from National Research Foundation Singapore programme NRF-CRP22-2019-0007,NRF-CRP22-2019-0004 and NRF-CRP21-2018-0007supported by the Ministry of Education,Singapore,under its AcRF Tier 3 Programme‘Geometrical Quantum Materials’(MOE2018-T3-1-002),AcRF Tier 2(MOE2019-T2-2-105)and AcRF Tier 1 RG4/17 and RG7/18We also thank the funding support from National Research foundation(NRF-CRP22-2019-0004).
文摘Two-dimensional(2D)ferromagnets with out-of-plane(OOP)magnetic anisotropy are potential candidates for realizing the next-generation memory devices with ultra-low power consumption and high storage density.However,a scalable approach to synthesize 2D magnets with OOP anisotropy directly on the complimentary metal-oxide semiconductor(CMOS)compatible substrates has not yet been mainly explored,which hinders the practical application of 2D magnets.This work demonstrates a cascaded space confined chemical vapor deposition(CS-CVD)technique to synthesize 2D FexGeTe_(2) ferromagnets.The weight fraction of iron(Fe)in the precursor controls the phase purity of the as-grown FexGeTe2.As a result,high-quality Fe_(3)GeTe_(2) and Fe_(5)GeTe_(2) flakes have been grown selectively using the CS-CVD technique.Curie temperature(Tc)of the as-grown FexGeTe2 can be up to-280 K,nearly room temperature.The thickness and temperature-dependent magnetic studies on the Fe_(5)GeTe_(2) reveal a 2D Ising to 3D XY behavior.Also,Terahertz spectroscopy experiments on Fe_(5)GeTe_(2) display the highest conductivity among other FexGeTe_(2) 2D magnets.The results of this work indicate a scalable pathway for the direct growth and integration of 2D ternary magnets on CMOS-based substrates to develop spintronic memory devices.
