Sub-10-nm bulk n-MOSFET （metal-oxide -semiconductor field effect transistor） direct source-to- drain tunneling current density using Wentzel- Krammers-Brillouin 0NKB） transmission tunneling theory has been simulate...Sub-10-nm bulk n-MOSFET （metal-oxide -semiconductor field effect transistor） direct source-to- drain tunneling current density using Wentzel- Krammers-Brillouin 0NKB） transmission tunneling theory has been simulated. The dependence of the source-to-drain tunneling current on channel length and barrier height is examined. Inversion layer quantization, band-gap narrowing, and drain induced barrier lowering effects have been included in the model. It has been observed that the leakage current density increases severely below 4 nm channel lengths, thus putting a limit to the scaling down of the MOSFETs. The results match closely with the numerical results already reported in literatures.展开更多
A simple analytical model has been developed to study quantum mechanical effects （QME） in a germanium substrate MOSFET （metal oxide semiconductor field effect transistor）, which includes gate oxide tunneling consi...A simple analytical model has been developed to study quantum mechanical effects （QME） in a germanium substrate MOSFET （metal oxide semiconductor field effect transistor）, which includes gate oxide tunneling considering the energy quantization effects in the substrate. Some alternate high dielectric constant materials to reduce the tunneling have also been studied. By comparing with the numerically reported results, the results match well with the existing reported work.展开更多
An attempt has been made to give a detailed review of strained silicon technology. Various device models have been studied that consider the effect of strain on the devices, and comparisons have been drawn. A review o...An attempt has been made to give a detailed review of strained silicon technology. Various device models have been studied that consider the effect of strain on the devices, and comparisons have been drawn. A review of some modeling issues in strained silicon technology has also been outlined. The review indicates that this technology is very much required in nanoscale MOSFETs due to its several potential benefits, and there is a strong need for an analytical model which describes the complete physics of the strain technology.展开更多
文摘Sub-10-nm bulk n-MOSFET （metal-oxide -semiconductor field effect transistor） direct source-to- drain tunneling current density using Wentzel- Krammers-Brillouin 0NKB） transmission tunneling theory has been simulated. The dependence of the source-to-drain tunneling current on channel length and barrier height is examined. Inversion layer quantization, band-gap narrowing, and drain induced barrier lowering effects have been included in the model. It has been observed that the leakage current density increases severely below 4 nm channel lengths, thus putting a limit to the scaling down of the MOSFETs. The results match closely with the numerical results already reported in literatures.
文摘A simple analytical model has been developed to study quantum mechanical effects （QME） in a germanium substrate MOSFET （metal oxide semiconductor field effect transistor）, which includes gate oxide tunneling considering the energy quantization effects in the substrate. Some alternate high dielectric constant materials to reduce the tunneling have also been studied. By comparing with the numerically reported results, the results match well with the existing reported work.
文摘An attempt has been made to give a detailed review of strained silicon technology. Various device models have been studied that consider the effect of strain on the devices, and comparisons have been drawn. A review of some modeling issues in strained silicon technology has also been outlined. The review indicates that this technology is very much required in nanoscale MOSFETs due to its several potential benefits, and there is a strong need for an analytical model which describes the complete physics of the strain technology.
