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Response of Sample Temperature during Straight-Line Ion Implantation
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作者 金凡亚 徐丽云 +4 位作者 石中兵 刘华英 王珂 沈丽如 童洪辉 《Plasma Science and Technology》 SCIE EI CAS CSCD 2005年第1期2678-2680,共3页
A theoretical model for calculation of the sample temperature during straight-line nitrogen ion implantation was established based on the results of experiment in this paper. Taking the pure aluminum as the samples, a... A theoretical model for calculation of the sample temperature during straight-line nitrogen ion implantation was established based on the results of experiment in this paper. Taking the pure aluminum as the samples, and from the transformation of electric energy into thermal energy, the calculated values of the temperature were in good agreement with the measured values in the experiment. According to the simulation, this technology can be applied to the control of specimens temperature during the implantation. 展开更多
关键词 ion implantation response of temperature SIMULATION
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