High quality epitaxial YBa2Cu3O7-δ （YBCO） superconducting films were fabricated on （00l） LaAlO3 substrates using the direct-current sputtering method. The attainment of an unusually high film thickness （up to 2...High quality epitaxial YBa2Cu3O7-δ （YBCO） superconducting films were fabricated on （00l） LaAlO3 substrates using the direct-current sputtering method. The attainment of an unusually high film thickness （up to 2.0 μm） without mi-crocracking was attributed in part to the presence of pores correlated with yttrium-rich composition in the films. The influ-ence of the film thickness on the microstructure was investigated by X-ray diffraction conventional scan （θ-2θ,ω-scan,pole figure） and high-resolution reciprocal space mapping. The films were c-axis oriented with no a-axis-oriented grains up to the thickness of 2 μm. The surface morphology and the critical current density （Jc） strongly depended on the film thickness. Furthermore,the reasons for these thickness dependences were elucidated in detail.展开更多
CeO2 seed layer was deposited on rolling-assisted biaxially textured metal substrates by direct-current （DC） magnetron reactive sputtering. The effect of deposition temperature on epitaxial orientation of CeO2 thin ...CeO2 seed layer was deposited on rolling-assisted biaxially textured metal substrates by direct-current （DC） magnetron reactive sputtering. The effect of deposition temperature on epitaxial orientation of CeO2 thin films was examined. High quality CeO2 layers were achieved at deposition temperature from 750℃ to 850℃.Subsequently yttria-stabilized zirconia （YSZ） and CeO2 films were deposited to complete the buffer layer structure via the same process. The best samples exhibited a highly biaxial texture, as indicated by FWHM （full width half maximum） values in the range of 4°-5°, and 2°-4° for in-plane and out-of-plane orientations,respectively. Secondary ion mass spectrometer analysis confirmed the effective prevention of buffer layer against Ni and W metal interdiffusion. Atomic force microscope observations revealed a smooth, dense and crack-free surface morphology, which provided themselves as the good buffer structure to the YBa2Cu3O7-δ（YBCO） coated conductors.展开更多
An undoped electrophosphorescent organic light-emitting diode is fabricated using a pure platinum（Ⅱ） （2-phenylpyridinato-N, Ca） （3-benzoyl-camphor） [（ppy）pt（bcam）] phosphorescent layer acting as the emittin...An undoped electrophosphorescent organic light-emitting diode is fabricated using a pure platinum（Ⅱ） （2-phenylpyridinato-N, Ca） （3-benzoyl-camphor） [（ppy）pt（bcam）] phosphorescent layer acting as the emitting layer. A maximum power efficiency Tlp of 6.621m/W and current efficiency of 14.78 cd/A at 745 cd/m2 are obtained from the device. The roll-off percentage of ηp of the pure phosphorescent phosphor layer device is reduced to 5% at a current density of 20mA/cm2, which is about 11% for conventional phosphorescent devices. The low roll-off efficiency is attributed to the phosphorescent material, which has the molecular structure of a strong steric hindrance effect.展开更多
A digital background calibration technique that corrects the capacitor mismatches error is proposed for successive approximation register analog-to-digital converter (SAR ADC). The technique is implemented in SAR ADC ...A digital background calibration technique that corrects the capacitor mismatches error is proposed for successive approximation register analog-to-digital converter (SAR ADC). The technique is implemented in SAR ADC which is based on tri-level switching. The termination capacitor in the Digital-to-Analog Converter (DAC) is regarded as a reference capacitor and the digital weights of all other unit capacitors are corrected with respect to the reference capacitor. To make a comparison between the size of the unit capacitor and that of the reference capacitor, each input sample is quantized twice. The unit capacitor being calibrated is swapped with the reference capacitor during the second conversion. The difference between the two conversion results is used to correct the digital weight of the unit capacitor under calibration. The calibration technique with two reference capacitors is presented to reduce the number of parameters to be estimated. Behavior simulation is performed to verify the proposed calibration technique by using a 12-bit SAR ADC with 3% random capacitor mismatch. The simulation results show that the Signal-to-Noise and Distortion Ratio (SNDR) is improved from 57.2 dB to 72.2 dB and the Spurious Free Dynamic Range (SFDR) is improved from 60.0 dB to 85.4 dB.展开更多
This paper proposes a digital background calibration scheme for timing skew in time-interleaved analog-to-digital converters (TIADCs). It detects the relevant timing error by subtracting the output difference with the...This paper proposes a digital background calibration scheme for timing skew in time-interleaved analog-to-digital converters (TIADCs). It detects the relevant timing error by subtracting the output difference with the sum of the first derivative of the digital output. The least-mean-square (LMS) loop is exploited to compensate the timing skew. Since the calibration scheme depends on the digital output, all timing skew sources can be calibrated and the main ADC is maintained. The proposed scheme is effective within the entire frequency range of 0 ? fs/2. Compared with traditional calibration schemes, the proposed approach is more feasible and consumes significantly lesser power and smaller area.展开更多
文摘High quality epitaxial YBa2Cu3O7-δ （YBCO） superconducting films were fabricated on （00l） LaAlO3 substrates using the direct-current sputtering method. The attainment of an unusually high film thickness （up to 2.0 μm） without mi-crocracking was attributed in part to the presence of pores correlated with yttrium-rich composition in the films. The influ-ence of the film thickness on the microstructure was investigated by X-ray diffraction conventional scan （θ-2θ,ω-scan,pole figure） and high-resolution reciprocal space mapping. The films were c-axis oriented with no a-axis-oriented grains up to the thickness of 2 μm. The surface morphology and the critical current density （Jc） strongly depended on the film thickness. Furthermore,the reasons for these thickness dependences were elucidated in detail.
文摘CeO2 seed layer was deposited on rolling-assisted biaxially textured metal substrates by direct-current （DC） magnetron reactive sputtering. The effect of deposition temperature on epitaxial orientation of CeO2 thin films was examined. High quality CeO2 layers were achieved at deposition temperature from 750℃ to 850℃.Subsequently yttria-stabilized zirconia （YSZ） and CeO2 films were deposited to complete the buffer layer structure via the same process. The best samples exhibited a highly biaxial texture, as indicated by FWHM （full width half maximum） values in the range of 4°-5°, and 2°-4° for in-plane and out-of-plane orientations,respectively. Secondary ion mass spectrometer analysis confirmed the effective prevention of buffer layer against Ni and W metal interdiffusion. Atomic force microscope observations revealed a smooth, dense and crack-free surface morphology, which provided themselves as the good buffer structure to the YBa2Cu3O7-δ（YBCO） coated conductors.
基金Supported by the National Natural Science Foundation of China under Grant No 20472060.
文摘An undoped electrophosphorescent organic light-emitting diode is fabricated using a pure platinum（Ⅱ） （2-phenylpyridinato-N, Ca） （3-benzoyl-camphor） [（ppy）pt（bcam）] phosphorescent layer acting as the emitting layer. A maximum power efficiency Tlp of 6.621m/W and current efficiency of 14.78 cd/A at 745 cd/m2 are obtained from the device. The roll-off percentage of ηp of the pure phosphorescent phosphor layer device is reduced to 5% at a current density of 20mA/cm2, which is about 11% for conventional phosphorescent devices. The low roll-off efficiency is attributed to the phosphorescent material, which has the molecular structure of a strong steric hindrance effect.
文摘A digital background calibration technique that corrects the capacitor mismatches error is proposed for successive approximation register analog-to-digital converter (SAR ADC). The technique is implemented in SAR ADC which is based on tri-level switching. The termination capacitor in the Digital-to-Analog Converter (DAC) is regarded as a reference capacitor and the digital weights of all other unit capacitors are corrected with respect to the reference capacitor. To make a comparison between the size of the unit capacitor and that of the reference capacitor, each input sample is quantized twice. The unit capacitor being calibrated is swapped with the reference capacitor during the second conversion. The difference between the two conversion results is used to correct the digital weight of the unit capacitor under calibration. The calibration technique with two reference capacitors is presented to reduce the number of parameters to be estimated. Behavior simulation is performed to verify the proposed calibration technique by using a 12-bit SAR ADC with 3% random capacitor mismatch. The simulation results show that the Signal-to-Noise and Distortion Ratio (SNDR) is improved from 57.2 dB to 72.2 dB and the Spurious Free Dynamic Range (SFDR) is improved from 60.0 dB to 85.4 dB.
文摘This paper proposes a digital background calibration scheme for timing skew in time-interleaved analog-to-digital converters (TIADCs). It detects the relevant timing error by subtracting the output difference with the sum of the first derivative of the digital output. The least-mean-square (LMS) loop is exploited to compensate the timing skew. Since the calibration scheme depends on the digital output, all timing skew sources can be calibrated and the main ADC is maintained. The proposed scheme is effective within the entire frequency range of 0 ? fs/2. Compared with traditional calibration schemes, the proposed approach is more feasible and consumes significantly lesser power and smaller area.
