We report a feasible method to realize tun able surface plasm on-polarit on(SPP)res onance in orga nic light-emitt ing devices(OLEDs)by emplo ying corrugated Ag-Al alloy electrodes.The excited SPP res onance in duced ...We report a feasible method to realize tun able surface plasm on-polarit on(SPP)res onance in orga nic light-emitt ing devices(OLEDs)by emplo ying corrugated Ag-Al alloy electrodes.The excited SPP res onance in duced by the periodic corrugations can be precisely tuned based on the composition ratios of the Ag-Al alloy electrodes.With an appropriate composition ratio of the corrugated alloy electrode,the photons trapped in SPP modes are recovered and extracted effectively.The 25%in creaseme nt in luminance and 21%enhan ceme nt in curre nt efficie ncy have bee n achieved by using the corrugated Ag-Al alloy electrodes in OLEDs.展开更多
我们建议在正常只限於一种商品的缺点 photonic 晶体(PC ) 的传播光谱利用剧降的一个综合生物化学的传感器波导，它有相反地方向性的结合另一 PC 波导。当在 PC 平板的空气洞与不同折射索引充满液体 analyte 时，剧降让波长变。由在某...我们建议在正常只限於一种商品的缺点 photonic 晶体(PC ) 的传播光谱利用剧降的一个综合生物化学的传感器波导，它有相反地方向性的结合另一 PC 波导。当在 PC 平板的空气洞与不同折射索引充满液体 analyte 时，剧降让波长变。由在某个固定波长检测产量力量变化， 1.2 x 10 的敏感(-4) 是可行的。这结构由于它的飞机波导结构和可以省去的泵来源为集成是容易的。另外，因为信号经由正常只限於一种商品的缺点 PC 波导播送而不是 PC 洞区域或 analyte，到噪音比率的高信号能被期望。展开更多
Prof. Bingkun Zhou is a famous expert in optoelectronics and has made the outstanding contribution for the development of optoelectronic technology in China. Thanks for the guidance and support from Prof. Dexiu Huang,...Prof. Bingkun Zhou is a famous expert in optoelectronics and has made the outstanding contribution for the development of optoelectronic technology in China. Thanks for the guidance and support from Prof. Dexiu Huang, Associate Editor-in-Chief of the Frontiers of Optoelectronics, we are honored to edit this special issue with emphasis on the current hot topics and future trends in the area of optoelectronics and applications to celebrate Prof. Bingkun Zhou＇s 80th Birthday.展开更多
A systematic study of the nonselective and smooth etching of GaN/AIGaN het-erostructures was performed using C12/Ar/BCI3 inductively coupled plasmas (ICR).Nonselective etching can be realized by adjusting the BCI3 rat...A systematic study of the nonselective and smooth etching of GaN/AIGaN het-erostructures was performed using C12/Ar/BCI3 inductively coupled plasmas (ICR).Nonselective etching can be realized by adjusting the BCI3 ratio in the Cl2/Ar/BCI3 mixture (20%—60%), increasing the ICR power and dc bias, and decreasing the chamber pressure. Surface morphology of the etched heterostructures strongly depends on the gas chemistry and the chamber pressure. Specifically, with the addition of 20% BCI3 to Cl2/Ar (4:1) gas mixture, nonselective etching of GaN/Al0.28Ga0.72N heterostructures at high etch rate is maintained and the surface root-mean-square (rms) roughness is reduced from 10.622 to 0.495 nm, which is smoother than the as-grown sample. Auger electron spectroscopy (AES) analysis shows that the effective removal of residual oxygen from the surface of AIGaN during the etching process is crucial to the nonselective and smooth etching of GaN/AIGaN herterostructures at high etch rate.展开更多
Laser annealing of silicon dioxide （SiO2） film formed by inductively coupled plasma enhanced chemical vapor deposition （ICPECVD）is studied for the fabrication of low loss silicon based waveguide. The influence of ...Laser annealing of silicon dioxide （SiO2） film formed by inductively coupled plasma enhanced chemical vapor deposition （ICPECVD）is studied for the fabrication of low loss silicon based waveguide. The influence of laser annealing on ICPECVD-deposited SiO2 film is investigated. The surface roughness, refractive index, and etch rate of annealed samples are compared with those of SiO2 film obtained by thermal oxidation. It is demonstrated that the performance of ICPECVD-deposited SiO2 film can be significantly improved by laser annealing. Al2O3/SIO2 waveguide has been fabricated on silicon substrate with the SiO2 lower cladding formed by ICPECVD and laser annealing process, and its propagation loss is found to be comparable with that of the waveguide with thermally oxidized lower cladding.展开更多
基金Supported by the National Natural Science Foundation of China under Grant No 60537010, the National Basic Researc： Programme of China under Grant Nos 2007CB307004 and 2006CB302804, and China Postdoctoral Science Foundation.
基金Supported by the National Natural Science Foundation of China under Grant No 60537010, and the National Basic Research Programme of China under Grant Nos 2006CB302804 and 2007CB307004.
文摘我们基于微型站乐队在 photonic 水晶平板引起的传播剧降建议一个液体传感器。模拟结果证明传感器的这种新奇类型有大侦探范围(超过 1.5 ) 和相对高敏感(4.3 x 10 (处于某些条件的 -5)) 。微型站乐队的中央频率和带宽取决于 PC 波导的结构参数，它使优化侦探范围和侦探敏感可能。
基金This work was supported by the National Key Research and Development Program of China and the National Natural Science Foundation of China(NSFC)under Grants No.2020YFA0715000 and No.61825402.
文摘We report a feasible method to realize tun able surface plasm on-polarit on(SPP)res onance in orga nic light-emitt ing devices(OLEDs)by emplo ying corrugated Ag-Al alloy electrodes.The excited SPP res onance in duced by the periodic corrugations can be precisely tuned based on the composition ratios of the Ag-Al alloy electrodes.With an appropriate composition ratio of the corrugated alloy electrode,the photons trapped in SPP modes are recovered and extracted effectively.The 25%in creaseme nt in luminance and 21%enhan ceme nt in curre nt efficie ncy have bee n achieved by using the corrugated Ag-Al alloy electrodes in OLEDs.
基金Supported by the National Natural Science Foundation of China under Grant No 60537010, and the National Basic Research Program of China under Grant Nos 2007CB307004 and 2006CB302804.
基金Supported by the National Natural Science Foundation of China under Grant No 60537010, and the National Basic Research Programme of China under Grant No 2006CB302804.
文摘我们建议在正常只限於一种商品的缺点 photonic 晶体(PC ) 的传播光谱利用剧降的一个综合生物化学的传感器波导，它有相反地方向性的结合另一 PC 波导。当在 PC 平板的空气洞与不同折射索引充满液体 analyte 时，剧降让波长变。由在某个固定波长检测产量力量变化， 1.2 x 10 的敏感(-4) 是可行的。这结构由于它的飞机波导结构和可以省去的泵来源为集成是容易的。另外，因为信号经由正常只限於一种商品的缺点 PC 波导播送而不是 PC 洞区域或 analyte，到噪音比率的高信号能被期望。
文摘Prof. Bingkun Zhou is a famous expert in optoelectronics and has made the outstanding contribution for the development of optoelectronic technology in China. Thanks for the guidance and support from Prof. Dexiu Huang, Associate Editor-in-Chief of the Frontiers of Optoelectronics, we are honored to edit this special issue with emphasis on the current hot topics and future trends in the area of optoelectronics and applications to celebrate Prof. Bingkun Zhou＇s 80th Birthday.
基金the Foundation for Key Projects of Basic Research (TG2000036601)the '863' High Tech Foundation (2002AA31119Z, 2001AA312190) the National Natural Science Foundation of China (Grant No. 60244001).
文摘A systematic study of the nonselective and smooth etching of GaN/AIGaN het-erostructures was performed using C12/Ar/BCI3 inductively coupled plasmas (ICR).Nonselective etching can be realized by adjusting the BCI3 ratio in the Cl2/Ar/BCI3 mixture (20%—60%), increasing the ICR power and dc bias, and decreasing the chamber pressure. Surface morphology of the etched heterostructures strongly depends on the gas chemistry and the chamber pressure. Specifically, with the addition of 20% BCI3 to Cl2/Ar (4:1) gas mixture, nonselective etching of GaN/Al0.28Ga0.72N heterostructures at high etch rate is maintained and the surface root-mean-square (rms) roughness is reduced from 10.622 to 0.495 nm, which is smoother than the as-grown sample. Auger electron spectroscopy (AES) analysis shows that the effective removal of residual oxygen from the surface of AIGaN during the etching process is crucial to the nonselective and smooth etching of GaN/AIGaN herterostructures at high etch rate.
基金This work was supported by the National Basic Research Program of China （Nos. 2012CB315605 and 2014CB340002）, the National Natural Science Foundation of China （Grant Nos. 61210014,61321004, 61307024, 61574082 and 51561165012）, the High Technology Researeh and Development Program of China（No. 2015AA017101）, the Independent Research Program of Tsinghua University （No. 20131089364） and the Open Fund of State Key Laboratory on Integrated Optoelectronics （Nos. IOSKL2012KF08 and IOSKL2014KF09）.
文摘Laser annealing of silicon dioxide （SiO2） film formed by inductively coupled plasma enhanced chemical vapor deposition （ICPECVD）is studied for the fabrication of low loss silicon based waveguide. The influence of laser annealing on ICPECVD-deposited SiO2 film is investigated. The surface roughness, refractive index, and etch rate of annealed samples are compared with those of SiO2 film obtained by thermal oxidation. It is demonstrated that the performance of ICPECVD-deposited SiO2 film can be significantly improved by laser annealing. Al2O3/SIO2 waveguide has been fabricated on silicon substrate with the SiO2 lower cladding formed by ICPECVD and laser annealing process, and its propagation loss is found to be comparable with that of the waveguide with thermally oxidized lower cladding.
基金This work was supported by the National Basic Research Program of China （No. 2013CB328704 and 2013CBA01704）, the National Natural Science Foundation of China （Grant No. 61307068）.
