We derive the well-known Coulomb correction factor for the Gordon-Volkov wave function describing an outgoing electron in the process of ionization in an intense laser field. Although rigorous treatment would limit it...We derive the well-known Coulomb correction factor for the Gordon-Volkov wave function describing an outgoing electron in the process of ionization in an intense laser field. Although rigorous treatment would limit its use only to laser fields much lower than the so-called barrier-suppression field, it appears that in practice the correction factor may be used also close to and even above this critical value of the laser field. We compare predictions of several analytical expressions describing ionization rate of the hydrogen atom in its ground state in the strong linearly polarized laser field. We also compare ionization probabilities obtained by integrating these ionization rates over a temporal envelope of the laser pulse with predictions based on the exact numerical solution to the time-dependent Schr ¨odinger equation.展开更多
Scanning electron microscopy （SEM） plays an indispensable role in nanoscience and nanotechnology because of its high efficiency and high spatial resolution in characterizing nanomaterials. Recent progress indicates ...Scanning electron microscopy （SEM） plays an indispensable role in nanoscience and nanotechnology because of its high efficiency and high spatial resolution in characterizing nanomaterials. Recent progress indicates that the contrast arising from different conductivities or bandgaps can be observed in SEM images if single-walled carbon nanotubes （SWCNTs） are placed on a substrate. In this study, we use SWCNTs on different substrates as model systems to perform SEM imaging of nanomaterials. Substantial SEM observations are conducted at both high and low acceleration voltages, leading to a comprehensive understanding of the effects of the imaging parameters and substrates on the material and surface-charge signals, as well as the SEM imaging. This unified picture of SEM imaging not only furthers our understanding of SEM images of SWCNTs on a variety of substrates but also provides a basis for developing new imaging recipes for other important nanomaterials used in nanoelectronics and nanophotonics.展开更多
文摘We derive the well-known Coulomb correction factor for the Gordon-Volkov wave function describing an outgoing electron in the process of ionization in an intense laser field. Although rigorous treatment would limit its use only to laser fields much lower than the so-called barrier-suppression field, it appears that in practice the correction factor may be used also close to and even above this critical value of the laser field. We compare predictions of several analytical expressions describing ionization rate of the hydrogen atom in its ground state in the strong linearly polarized laser field. We also compare ionization probabilities obtained by integrating these ionization rates over a temporal envelope of the laser pulse with predictions based on the exact numerical solution to the time-dependent Schr ¨odinger equation.
文摘Scanning electron microscopy （SEM） plays an indispensable role in nanoscience and nanotechnology because of its high efficiency and high spatial resolution in characterizing nanomaterials. Recent progress indicates that the contrast arising from different conductivities or bandgaps can be observed in SEM images if single-walled carbon nanotubes （SWCNTs） are placed on a substrate. In this study, we use SWCNTs on different substrates as model systems to perform SEM imaging of nanomaterials. Substantial SEM observations are conducted at both high and low acceleration voltages, leading to a comprehensive understanding of the effects of the imaging parameters and substrates on the material and surface-charge signals, as well as the SEM imaging. This unified picture of SEM imaging not only furthers our understanding of SEM images of SWCNTs on a variety of substrates but also provides a basis for developing new imaging recipes for other important nanomaterials used in nanoelectronics and nanophotonics.
