A new analytical model of high voltage silicon on insulator(SOI) thin film devices

A new analytical model of high voltage silicon on insulator （SOI） thin film devices is proposed, and a formula of silicon critical electric field is derived as a function of silicon film thickness by solving a 2D Poisson equation from an effective ionization rate, with a threshold energy taken into account for electron multiplying. Unlike a conventional silicon critical electric field that is constant and independent of silicon film thickness, the proposed silicon critical electric field increases sharply with silicon fihn thickness decreasing especially in the case of thin films, and can come to 141V/μm at a film thickness of 0.1 μm which is much larger than the normal value of about 30 V/μm. From the proposed formula of silicon critical electric field, the expressions of dielectric layer electric field and vertical breakdown voltage （VB,V） are obtained. Based on the model, an ultra thin film can be used to enhance dielectric layer electric field and so increase vertical breakdown voltage for SOI devices because of its high silicon critical electric field, and with a dielectric layer thickness of 2 μm the vertical breakdown voltages reach 852 and 300V for the silicon film thicknesses of 0.1 and 5μm, respectively. In addition, a relation between dielectric layer thickness and silicon film thickness is obtained, indicating a minimum vertical breakdown voltage that should be avoided when an SOI device is designed. 2D simulated results and some experimental results are in good agreement with analytical results.

Optimized growth and dielectric properties of barium titanate thin films on polycrystalline Ni foils

Barium titanate（BTO） thin films were deposited on polycrystalline Ni foils by using the polymer assisted deposition（PAD） technique.The growth conditions including ambient and annealing temperatures were carefully optimized based on thermal dynamic analysis to control the oxidation processing and interdiffusion.Crystal structures,surface morphologies,and dielectric performance were examined and compared for BTO thin films annealed under different temperatures.Correlations between the fabrication conditions,microstructures,and dielectric properties were discussed.BTO thin films fabricated under the optimized conditions show good crystalline structure and promising dielectric properties with εr～ 400 and tan δ 〈 0.025 at 100 kHz.The data demonstrate that BTO films grown on polycrystalline Ni substrates by PAD are promising in device applications.

Study of nanocrystalline VO_2 thin films prepared by magnetron sputtering and post-oxidation

Nanocrystalline VO2 thin films were deposited onto glass slides by direct current magnetron sputtering and postoxidation. These films undergo semiconductor-metal transition at 70 ℃, accompanied by a resistance drop of two magnitude orders. The crystal structures and surface morphologies of the VO2 films were characterized by x-ray diffraction （XRD） and atomic force microscope （AFM）, respectively. Results reveal that the average grain size of VO2 nanograins measured by XRD is smaller than those measured by AFM. In addition, Raman characterization indicates that stoichiometric VO2 and oxygen-rich VO2 phases coexist in the films, which is supported by x-ray photoelectron spectroscopy （XPS） results. Finally, the optical properties of the VO2 films in UV-visible range were also evaluated. The optical band gap corresponding to 2p-3d inter-band transition was deduced according to the transmission and reflection spectra. And the deduced value, Eopt2p-3d ： 1.81 eV, is in good agreement with that previously obtained by theoretical calculation.

Microstructure and electrical properties of La_2 O_3-doped ZnO-based varistor thin films by sol-gel process

Microstructure and electrical properties of La2 O3-doped ZnO-Bi2 O3 thin films prepared by sol–gel process have been investigated.X-ray diffraction shows that most diffraction peaks of ZnO are equal,and the crystals of ZnO grow well.Scanning electron microscopy and atomic force microscopy results indicate that the samples have a good structure and lower surface roughness.The nonlinear V–I characteristics of the films show that La2 O3 develops the electrical properties largely and the best doped content is 0.3% lanthanum ion,with the leakage current of 0.25 mA,the threshold field of 150 V/mm and the nonlinear coefficient of 4.0 in detail.

Enhancement of Frster energy transfer from thermally activated delayed fluorophores layer to ultrathin phosphor layer for high color stability in non-doped hybrid white organic light-emitting devices

Fluorescence/phosphorescence hybrid white organic light-emitting devices（WOLEDs） based on double emitting layers（EMLs） with high color stability are fabricated.The simplified EMLs consist of a non-doped blue thermally activated delayed fluorescence（TADF） layer using 9,9-dimethyl-9,10-dihydroacridine-diphenylsulfone（DMAC-DPS） and an ultrathin non-doped yellow phosphorescence layer employing bis[2-（4-tertbutylphenyl）benzothiazolato-N,C2＇]iridium（acetylacetonate）（（tbt）_2Ir（acac））.Two kinds of materials of 4,7-diphenyl-1,10-phenanthroline（Bphen） and 1,3,5-tris（2-Nphenylbenzimidazolyl） benzene（TPBi） are selected as the electron transporting layer（ETL）,and the thickness of yellow EML is adjusted to optimize device performance.The device based on a 0.3-nm-thick yellow EML and Bphen exhibits high color stability with a slight Commission International de l＇Eclairage（CIE） coordinates variation of（0.017,0.009） at a luminance ranging from 52 cd/m^2 to 6998 cd/m^2.The TPBi-based device yields a high efficiency with a maximum external quantum efficiency（EQE）,current efficiency,and power efficiency of 10%,21.1 cd/A,and 21.3 lm/W,respectively.The ultrathin yellow EML suppresses hole trapping and short-radius Dexter energy transfer,so that Forster energy transfer（FRET）from DMAC-DPS to（tbt）_2Ir（acac） is dominant,which is beneficial to keep the color stable.The employment of TPBi with higher triplet excited state effectively alleviates the triplet exciton quenching by ETL to improve device efficiency.

Enhancement of electroluminescent properties of organic optoelectronic integrated device by doping phosphorescent dye

Organic optoelectronic integrated devices（OIDs） with ultraviolet（UV） photodetectivity and different color emitting were constructed by using a thermally activated delayed fluorescence（TADF） material 4, 5-bis（carbazol-9-yl）-1, 2-dicyanobenzene（2 CzPN） as host. The OIDs doping with typical red phosphorescent dye [tris（1-phenylisoquinoline）iridium（Ⅲ）, Ir（piq）3], orange phosphorescent dye {bis[2-（4-tertbutylphenyl）benzothiazolato-N,C-（2＇）]iridium（acetylacetonate）,（tbt）2 Ir（acac）}, and blue phosphorescent dye [bis（2, 4-di-fluorophenylpyridinato）-tetrakis（1-pyrazolyl）borate iridium（Ⅲ）, FIr6] were investigated and compared. The（tbt）2 Ir（acac）-doped orange device showed better performance than those of red and blue devices, which was ascribed to more effective energy transfer. Meanwhile, at a low dopant concentration of 3 wt.%, the（tbt）2 Ir（acac）-doped OIDs showed the maximum luminance, current efficiency, power efficiency of 70786 cd/m^2, 39.55 cd/A, and 23.92 lm/W, respectively, and a decent detectivity of 1.07 × 10^11 Jones at a bias of -2 V under the UV-350 nm illumination. This work may arouse widespread interest in constructing high efficiency and luminance OIDs based on doping phosphorescent dye.

Device design principles and bioelectronic applications for flexible organic electrochemical transistors

Organic electrochemical transistors(OECTs) exhibit significant potential for applications in healthcare and human-machine interfaces, due to their tunable synthesis, facile deposition, and excellent biocompatibility. Expanding OECTs to the fexible devices will significantly facilitate stable contact with the skin and enable more possible bioelectronic applications. In this work,we summarize the device physics of fexible OECTs, aiming to offer a foundational understanding and guidelines for material selection and device architecture. Particular attention is paid to the advanced manufacturing approaches, including photolithography and printing techniques, which establish a robust foundation for the commercialization and large-scale fabrication. And abundantly demonstrated examples ranging from biosensors, artificial synapses/neurons, to bioinspired nervous systems are summarized to highlight the considerable prospects of smart healthcare. In the end, the challenges and opportunities are proposed for fexible OECTs. The purpose of this review is not only to elaborate on the basic design principles of fexible OECTs, but also to act as a roadmap for further exploration of wearable OECTs in advanced bio-applications.

Ultrafast carrier dynamics in GeSn thin film based on time-resolved terahertz spectroscopy

We measure the time-resolved terahertz spectroscopy of GeSn thin film and studied the ultrafast dynamics of its photo-generated carriers.The experimental results show that there are photo-generated carriers in GeSn under femtosecond laser excitation at 2500 nm,and its pump-induced photoconductivity can be explained by the Drude–Smith model.The carrier recombination process is mainly dominated by defect-assisted Auger processes and defect capture.The firstand second-order recombination rates are obtained by the rate equation fitting,which are(2.6±1.1)×10^(-2)ps^(-1)and(6.6±1.8)×10^(-19)cm^(3)·ps^(-1),respectively.Meanwhile,we also obtain the diffusion length of photo-generated carriers in GeSn,which is about 0.4μm,and it changes with the pump delay time.These results are important for the GeSn-based infrared optoelectronic devices,and demonstrate that Ge Sn materials can be applied to high-speed optoelectronic detectors and other applications.

Soft Magnetic Thin Films FeCoHfO for High-Frequency Noise Suppression Applications

A series of FeCoHfO films were fabricated by dc magnetron reactive sputtering at varying partial pressure of oxygen （Po2） from 0 to 11.7%, and the electrical and magnetic properties of films have been studied. It is shown that optimal Fe43.29 Co19.51Hf7.49 O29.71 films with desired properties can be obtained when the films were prepared under Po2= 5.1%. The films show superior properties of low coereivity, Hc ∽5.5 Oe, relatively high saturation magnetization, 47rMs · 18.3 kG, high anisotropy field Hk ∽ 65 Oe, and high electrical resistivity ρ∽ 2675 μΩ·cm. Permeability spectra shows that the natural ferromagnetic resonant frequency is as high as 3.1 GHz. The combined merits of the film make the films taken as an ideal candidate material for high-frequency applications such as noise suppressor. In addition, the effects of the film thickness and annealing treatment on the magnetic properties are also reported.

Co-occurrence of Dominant Direct and Indirect Transitions in Low Temperature Sputtered Indium Tin Oxide Thin Films on Polymers

铟听氧化物(ITO ) 层被在房间温度劈啪作响的 rf 磁控管在 polymethylmethacrylate 和聚乙烯 terephthalate 上准备。他们的 3D-AFM 图象和可见发射度系列对比地被描绘并且学习。他们的最高的 ITO 层上的聚合物底层的有趣的词法效果被观察。从光系列推出的主导的直接、间接的转变类型令人惊讶地在不同聚合物上在 ITO 电影被发现。而且，质的乐队结构被考虑，并且关于光乐队的关联的一些理论讨论组织接口 / 表面形态学和搬运人密度也被介绍。[从作者抽象]

Effects of TbFeCo Underlayers on Magnetic Properties of CoFe_2O_4 Thin Films

Cobalt ferrite thin films were deposited on TbFeCo(10 nm)/Si(100) and Si(100) substrates at a substrate temperature of 350 ℃ by RF magnetron sputtering. The heat treated films were analyzed by Vibrating Sample Magnetometer (VSM) and X-Ray Photoelectron Spectroscopy (XPS). Results showed that all films had high coercivity and perpendicular anisotropy especially for the films deposited on TbFeCo underlayer. TbFeCo underlayers increase the coercivity, magnetization and remanence ratio of CoFe2O4 films, films on TbFeCo underlayer had coercivity and magnetization as high as 832×103 A·m-1 and 450×103 A·m-1, and its romance ratio reaches 0.9, which was related to the Tb3+ diffusion from the underlayer into the film.

Optoelectronic properties analysis of silicon light-emitting diode monolithically integrated in standard CMOS IC

Si p^+n junction diodes operating in the mode of avalanche breakdown are capable of emitting light in the visible range of 400-900 nm. In this study, to realize the switching speed in the GHz range, we present a transient model to shorten the carrier lifetime in the high electric field region by accumulating carriers in both p and n type regions. We also verify the optoelectronic characteristics by disclosing the related physical mechanisms behind the light emission phenomena. The emission of visible light by a monolithically integrated Si diode under the reverse bias is also discussed. The light is emitted as spatial sources by the defects located at the p-n junction of the reverse-biased diode. The influence of the defects on the electrical behavior is manifested as a current-dependent electroluminescence.

Effect of external electric field on crystalline structure and dielectric properties of Bi_(1.5)MgNb_(1.5)O_(7) thin films

Bismuth-based cubic pyrochlore materials have attractive dielectric properties,especially dielectric tunability.The Bi_(1.5)MgNb_(1.5)O_(7) ceramic samples were prepared by solid state reaction.The XRD results and SEM pictures prove the raw material are well mixed and co-fired and the BMN cubic pyrochlore is well crystallized,no second phase was found in the result.BMN thin film were fabricated by depositing BMN ceramic nanoparticles on the sapphire.The BMN thin film has a high dielectric tunability of 43%at a bias voltage of 1.5 MV/cm,with loss tangent lower than 0.009.A Raman study of BMN cubic pyrochlore reveals O′-A-O′and O-A-O bending modes contribute to 80%of dielectric permittivity,obstructing these modes such as applying external electric field can have apparent influence on dielectric constant.Berry Phase calculation results shows that A2O′tetrahedrons are more easy to distort under an external field.The A-site Mg have the highest displacement(0.765028 A),followed by A-site Bi cations(0.346317˚A).Compared to zero-bias thin film,˚the biased one with A-O and A-O′bonds being stretched and external coulomb force applied on cations and anions,the dielectric constant under bias field dramatically decreased.

Effects of Growth Conditions on the Microstructure Characteristics of CdS Thin Films by AP-MOCVD

Growth of cadmium sulfide （CdS） thin films on glass substrates was carried out by atmospheric pressure metal-organic chemical vapor deposition （AP-MOCVD） using Cd（S2CNEt2）2 as the single precursor. Changes in the surface morphology of the deposited CdS thin films were investigated by atomic force microscope （AFM） as the function of substrate temperature （Ts）, vaporizing temperature （Tv）, and Ar flow rate. With the increase of Tv, CdS thin films evolved from pyramidal structure with fine grains to columnar structure with large grains. X-ray diffraction （XRD） patterns indicated that the CdS films had random orientation at the lower Tv and preferred orientation at the higher Tv. In addition, Ts had a great effect on the surface roughness of the CdS films, and a quantum dot-like structural CdS films were obtained in a narrow range of Ts with high Ar flow rate. Furthermore, the optical properties of the CdS films were measured using ultraviolet-visible （UV/VIS） spectrometer.

Resistive Switching Characteristics of Al2O3/ZnO Bilayer Thin Films for Flexible Memory Applications

Unipolar resistive switching behaviors of the ZnO and ALO/ZnO films fabricated on flexible substrates by pulse laser deposition were studied in this paper. The films were deposited at room temperature without post-annealing treatment during the process. Xray diffraction results indicated that ZnO film has a dominant peak at(002). Scanning electron microscopy observation showed a columnar grain structure of the ZnO film to the substrate. The bilayer device of ALO/ZnO films had stable resistive switching behaviors with a good endurance performance of more than 200 cycles, high resistive switching ratio of over 103 at a read voltage of 0.1V, which is better than that of the single oxide layer device of ZnO film. A possible resistive switching filamentary mode was demonstrated in this paper. The conduction mechanisms of high and low resistance states can be explained by space charge limited conduction and Ohmic’s behaviors. The endurance of the bilayer(BL) device was not degraded upon bending cycles, which indicates the potential of the flexible resistive switching random access memory applications.

Electrical transport and optical properties of Cd3As2 thin films

Cd3As2, as a three-dimensional(3D) topological Dirac semimetal, has attracted wide attention due to its unique physical properties originating from the 3D massless Dirac fermions. While many efforts have been devoted to the exploration of novel physical phenomena such as chiral anomaly and phase transitions by using bulk crystals, the development of high-quality and large-scale thin films becomes necessary for practical electronic and optical applications. Here, we report our recent progress in developing single-crystalline thin films with improved quality and their optical devices including Cd3As2-based heterojunctions and ultrafast optical switches. We find that a post-annealing process can significantly enhance the crystallinity of Cd3As2 in both intrinsic and Zn-doped thin films. With excellent characteristics of high mobility and linear band dispersion, Cd3As2 exhibits a good optical response in the visible-to-mid-infrared range due to an advantageous optical absorption, which is reminiscent of 3D graphene. It also behaves as an excellent saturable absorber in the mid-infrared regime. Through the delicate doping process in this material system, it may further open up the long-sought parameter space crucial for the development of compact and high-performance mid-infrared ultrafast sources.

Microstructure and magnetic properties of NiZn ferrite thin films prepared by sol-gel method

Ti4+ substitution for Fe3+ in Ni0.5Zn0.5Fe2O4(NZF) ferrite thin films were realized by sol-gel method and annealing at 600 ℃ for 30 min in the air. Crystal structure and lattice constant determination was performed by X-ray diffractometer(XRD). Surface microstructure was observed by scanning electron microscope(SEM) and atomic force microscope(AFM),and the magnetic properties were measured by vibrating sample magnetometer(VSM). XRD analyses of the samples show that Ni0.5+xZn0.5TixFe2-2xO4(NZTF) films with x varying from 0 to 0.15 in steps of 0.05 are composed of single phase with spinel structure. And the lattice parameter,particle size and the diffraction intensity of the films increase with substitution of Ti as the result of the larger radius ions entering the lattice. SEM and AFM show homogeneous grain size of each sample,but there is a few differences in grain size with different Ti-substitution contents. As the nonmagnetic Ti4+ substitutes Fe3+,both the saturation magnetization and coercivity decrease.

Microwave Magnetic Properties of Laminates with Thin FeCoBSi Films

The microwave permeability of laminated composites based on thin FeCoBSi films was under study.The level of permeability increased with increasing of the ferromagnetic inclusions in the laminates.The intrinsic permeability spectra of ferromagnetic inclusion are parametrically reconstructed.The obtained parameters of magnetic resonance were specially analyzed.To avoid the effect of eddy current and to obtain large-volume fractions of ferromagnetic constituent,laminates consisting of alternating FeCoBSi/SiO2 multi-layers and mylar substrates were also investigated.For the same volume fractions of ferromagnetic constituent （8.7%）,laminates based on multi-layered films are found to possess higher values of permeability than those based on one-layered films.

Effect of BCP ultrathin layer on the performance of organic light-emitting devices

Based on conventional double layer device, triple layer organic light-emitting diodes (OLEDs) with two heterostructures of indium-tin oxide (ITO)/N,N'-diphenyl-N,N'-bis(1-naphthyl)(1,1'-biphenyl)-4,4'-diamine(NPB)/2,9-dimethyl-4,7-diphenyl- 1,10-phenanthroline (BCP)/ 8-Hydroxyquinoline aluminum (Alq3)/Mg:Ag using vacuum deposition method have been fabricated. The influence of different film thickness of BCP layer on the performance of OLEDs has been investigated. The results showed that when the thickness of the BCP layer film gradually varied from 0.1 nm to 4.0 nm, the electrolumines- cence (EL) spectra of the OLEDs shifted from green to greenish-blue to blue, and the BCP layer acted as the recombination region of charge carriers related to EL spectrum, enhancing the brightness and power efficiency. The power efficiency of OLEDs reached as high as 7.3 lm/W.

Probing thermal properties of vanadium dioxide thin films by time-domain thermoreflectance without metal film

Vanadium dioxide(VO_(2))is a strongly correlated material,and it has become known due to its sharp metal-insulator transition(MIT)near room temperature.Understanding the thermal properties and their change across MIT of VO_(2)thin film is important for the applications of this material in various devices.Here,the changes in thermal conductivity of epitaxial and polycrystalline VO_(2)thin film across MIT are probed by the time-domain thermoreflectance(TDTR)method.The measurements are performed in a direct way devoid of deposition of any metal thermoreflectance layer on the VO_(2)film to attenuate the impact from extra thermal interfaces.It is demonstrated that the method is feasible for the VO_(2)films with thickness values larger than 100 nm and beyond the phase transition region.The observed reasonable thermal conductivity change rates across MIT of VO_(2)thin films with different crystal qualities are found to be correlated with the electrical conductivity change rate,which is different from the reported behavior of single crystal VO_(2)nanowires.The recovery of the relationship between thermal conductivity and electrical conductivity in VO_(2)film may be attributed to the increasing elastic electron scattering weight,caused by the defects in the film.This work demonstrates the possibility and limitation of investigating the thermal properties of VO_(2)thin films by the TDTR method without depositing any metal thermoreflectance layer.