Indium tin oxide （ITO） films were fabricated on polyethylene terephthalate （PET） substrate at room temperature using dc magnetron sputtering technique with different sputtering powers. The structural, electrical a...Indium tin oxide （ITO） films were fabricated on polyethylene terephthalate （PET） substrate at room temperature using dc magnetron sputtering technique with different sputtering powers. The structural, electrical and optical properties were investigated by X-ray diffraction （XRD）, Hall effect, reflection and transmission, respectively. XRD patterns show gradual enhancement of crystalline quality with increasing sputtering power. Significant improvement of Hall mobility due to the reduction of defects was observed though the carrier density varied slightly. Simultaneously, the mean transmission in visible light range decreased severely with increasing sputtering power. Slight move toward shorter-wavelength side of absorption peak was due to the variation of plasma wavelength. The reflection increase of near-infrared light originated from the decrease of resistivity. Finally, band gap was obtained using Tauc＇s relation and it was consistent with Burstein-Moss shift.展开更多
A novel multiple super junction （MS J） LDMOS power device is proposed to decrease Ron due to lateral and vertical interactions between the N-pillar and P-pillar. In the studied device： multiple layers of SJ are int...A novel multiple super junction （MS J） LDMOS power device is proposed to decrease Ron due to lateral and vertical interactions between the N-pillar and P-pillar. In the studied device： multiple layers of SJ are introduced oppositely under surface S J; when compared with 2D-depleting of the conventional super junction （CSJ）, a 3D- depleted effect is formed in the MSJ thanks to vertical electric field modulation; and, current distribution is improved by deep drain, which increases the drift doping concentration and results in a lower on-resistance. The high electric field around the drain region by substrate-assisted depleted effect is reduced due to the charge balance result from the electric field shielding effect of the bottom S J, which causes the uniform electric field in the drift region and the high breakdown voltage. The numerical simulation results indicate that the specific on-resistance of the MSJ device is reduced by 42% compared with that of CSJ device, while maintaining a high breakdown voltage; the cell pitch of the device is 12 μm.展开更多
基金supported by the National Natural Science Foundation of China (No. 51071038)Program forNew Century Excellent Talents in University (NCET-09-0265)+1 种基金Sichuan Province Science Foundation for Youths(No. 2010JQ0002)State Key Laboratory for Mechanical Behavior of Materials, Xi an Jiaotong University(No. 201011005)
文摘Indium tin oxide （ITO） films were fabricated on polyethylene terephthalate （PET） substrate at room temperature using dc magnetron sputtering technique with different sputtering powers. The structural, electrical and optical properties were investigated by X-ray diffraction （XRD）, Hall effect, reflection and transmission, respectively. XRD patterns show gradual enhancement of crystalline quality with increasing sputtering power. Significant improvement of Hall mobility due to the reduction of defects was observed though the carrier density varied slightly. Simultaneously, the mean transmission in visible light range decreased severely with increasing sputtering power. Slight move toward shorter-wavelength side of absorption peak was due to the variation of plasma wavelength. The reflection increase of near-infrared light originated from the decrease of resistivity. Finally, band gap was obtained using Tauc＇s relation and it was consistent with Burstein-Moss shift.
基金Project supported by the State key Laboratory of Electronic Thin Films and Integrated Devices(UESTC)of China(No.KFJJ201205)the Guangxi Natural Science Foundation(No.2013GXNSFGA019003)the China Postdoctoral Science Foundation Funded Project(Nos.2012M521127,2013T60566)
文摘A novel multiple super junction （MS J） LDMOS power device is proposed to decrease Ron due to lateral and vertical interactions between the N-pillar and P-pillar. In the studied device： multiple layers of SJ are introduced oppositely under surface S J; when compared with 2D-depleting of the conventional super junction （CSJ）, a 3D- depleted effect is formed in the MSJ thanks to vertical electric field modulation; and, current distribution is improved by deep drain, which increases the drift doping concentration and results in a lower on-resistance. The high electric field around the drain region by substrate-assisted depleted effect is reduced due to the charge balance result from the electric field shielding effect of the bottom S J, which causes the uniform electric field in the drift region and the high breakdown voltage. The numerical simulation results indicate that the specific on-resistance of the MSJ device is reduced by 42% compared with that of CSJ device, while maintaining a high breakdown voltage; the cell pitch of the device is 12 μm.
