Silicon sub-bandgap photodetectors can detect light at the infrared telecommunication wavelengths but with relatively weak photo-response.In this work,we demonstrate the enhancement of sub-bandgap photodetection in si...Silicon sub-bandgap photodetectors can detect light at the infrared telecommunication wavelengths but with relatively weak photo-response.In this work,we demonstrate the enhancement of sub-bandgap photodetection in silicon by helium-ion implantation,without afecting the transparency that is an important benefcial feature of this type of photodetectors.With an implantation dose of 1×10^(13)ions/cm^(2),the minimal detectable optical power can be improved from−33.2 to−63.1 dBm,or,by 29.9 dB,at the wavelength of 1550 nm,and the photo-response at the same optical power(−10 dBm)can be enhanced by approximately 18.8 dB.Our work provides a method for strategically modifying the intrinsic trade-of between transparency and strong photo-responses of this type of photodetectors.展开更多
基金supported by the National Key Research and Development Program of China(No.2019YFB2203600)the Open Project Program of Wuhan National Laboratory for Optoelectronics(No.2020WNLOKF003).
文摘Silicon sub-bandgap photodetectors can detect light at the infrared telecommunication wavelengths but with relatively weak photo-response.In this work,we demonstrate the enhancement of sub-bandgap photodetection in silicon by helium-ion implantation,without afecting the transparency that is an important benefcial feature of this type of photodetectors.With an implantation dose of 1×10^(13)ions/cm^(2),the minimal detectable optical power can be improved from−33.2 to−63.1 dBm,or,by 29.9 dB,at the wavelength of 1550 nm,and the photo-response at the same optical power(−10 dBm)can be enhanced by approximately 18.8 dB.Our work provides a method for strategically modifying the intrinsic trade-of between transparency and strong photo-responses of this type of photodetectors.
