Design of Waveguide Integrated Ge-Quantum-Well Electro-Absorption Modulators

We present two designs for a waveguide Oe-quantum-well electro-absorption modulator. In our designs, the strip SOI waveguides are butt-coupled and evanescent-coupled to the modulator, respectively. The proposed Gequantum-weB electro-absorption modulator is based on quantum-confined Stark effect （QCSE）, having a 3-dB bandwidth above 50GHz, as well as a low switching power （around 60fJ/bit at 1435nm）. In the butt-coupled design, the optimized extinction ratio is up to 11.4 dB, while the insertion loss is only 6. 74 dB. For the second one, which utilizes evanescent coupling, the extinction ratio and insertion loss are 9.18 dB and 6. 72 dB, respectively.

Room-temperature continuous-wave operation of GaN-based blue-violet laser diodes with a lifetime longer than 1000h

GaN-based continuous-wave operated blue-violet laser diodes(LDs) with long lifetime are demonstrated, which are grown on a c-plane GaN substrate by metal organic chemical vapor deposition with a 10 × 600 μm^2 ridge waveguide structure.The electrical and optical characteristics of a blue-violet LD are investigated under direct-current injection at room temperature(25 °C). The stimulated emission wavelength and peak optical power of the LD are around 413 nm and over 600 mW, respectively.In addition, the threshold current density and voltage are as small as 1.46 kA/cm^2 and 4.1 V, respectively. Moreover, the lifetime is longer than 1000 hours under room-temperature continuous-wave operation.

GaN-based blue laser diode with 6.0 W of output power under continuous-wave operation at room temperature

In this work,we reported the room-temperature continuous-wave operation of 6.0 W GaN-based blue laser diode(LD),and its stimulated emission wavelength is around 442 nm.The GaN-based high power blue LD is grown on a c-plane GaN substrate by metal organic chemical vapor deposition(MOCVD),and the width and length of the ridge waveguide structure are 30 and 1200μm,respectively.The threshold current is about 400 mA,and corresponding threshold current density is 1.1 kA/cm2.

Infrared transition properties of vanadium dioxide thin films across semiconductor-metal transition

Vanadium dioxide thin films were fabricated through annealing vanadium oxide thin films deposited by dual ion beam sputtering. X-ray diffraction （XRD）, atom force microscopy （AFM）, and Fourier transform infrared spectrum （FTIR） were employed to measure the crystalline structure, surface morphology, and infrared optical transmittance. The phase transition properties were characterized by transmittance. The results show that the annealed vanadium oxide thin film is composed of monoclinic VO2, with preferred orientation of （011）. The maximum of transmittance change is beyond 65% as the temperature increases from 20 to 80 C. The reversible changes in optical transmittance against temperature were observed. The change rate of transmittance at short wavelength is higher than that at long wavelength at the same temperature across semiconductor-metal phase transition. This phenomenon was discussed using diffraction effect.

Evaluation of polarization field in InGaN/GaN multiple quantum well structures by using electroluminescence spectra shift

In order to investigate the inherent polarization intensity in InGaN/GaN multiple quantum well(MQW) structures,the electroluminescence(EL) spectra of three samples with different GaN barrier thicknesses of 21.3 nm, 11.4 nm, and 6.5 nm are experimentally studied. All of the EL spectra present a similar blue-shift under the low-level current injection,and then turns to a red-shift tendency when the current increases to a specific value, which is defined as the turning point.The value of this turning point differs from one another for the three InGaN/GaN MQW samples. Sample A, which has the GaN barrier thickness of 21.3 nm, shows the highest current injection level at the turning point as well as the largest value of blue-shift. It indicates that sample A has the maximum intensity of the polarization field. The red-shift of the EL spectra results from the vertical electron leakage in InGaN/GaN MQWs and the corresponding self-heating effect under the high-level current injection. As a result, it is an effective approach to evaluate the polarization field in the InGaN/GaN MQW structures by using the injection current level at the turning point and the blue-shift of the EL spectra profiles.

Design and fabrication of a high-performance evanescently coupled waveguide photodetector

In this paper, we present the design, fabrication, and measurement of an evanescently coupled waveguide photode- tector operating at 1.55 gm, which mainly comprises a diluted waveguide, a single-mode rib waveguide and a p-i-n photodiode with an extended optical matching layer. The optical characteristics of this structure are studied by using a three-dimensional finite-difference time-domain （3D FDTD） method. The photodetector exhibits a high 3-dB bandwidth of more than 35 GHz and a responsivity of 0.291 A/W at 1550 nm directly coupled with a cleaved fiber. Moreover, a linear response of more than 72-mW optical power is achieved, where a photocurrent of more than 21 mA is obtained at a reverse bias voltage of 3 V.

The single-longitudinal-mode operation of a ridge waveguide laser based on two-dimensional photonic crystals

An electrically driven, single-longitudinal-mode GaAs based photonic crystal （PC） ridge waveguide （RWG） laser emitting at around 850 nm is demonstrated. The single-longitudinal-mode lasing characteristic is achieved by introducing the PC to the RWG laser. The triangle PC is etched on both sides of the ridge by photolithography and inductive coupled plasma （ICP） etching. The lasing spectra of the RWG lasers with and without the PC are studied, and the result shows that the PC purifies the longitudinal mode. The power per facet versus current and current-voltage characteristics have also been studied and compared.

Design and fabrication of multi-channel photodetector array monolithic with arrayed waveguide grating

We have provided optical simulations of the evanescently coupled waveguide photodiodes integrated with a 13- channels AWGs. The photodiode could exhibit high internal efficiency by appropriate choice of layers geometry and refrac- tive index. Aseamless joint structure has been designed and fabricated for integrating the output waveguides of AWGs with the evanescently coupled waveguide photodiode array. The highest simulation quantum efficiency could achieve 92% when the matching layer thickfiess of the PD is 120 nm and the insertion length is 2 μm. The fabricated PD with 320-nm-thick match.ing layer and 2-μm-length insertion matching layer present a responsivity of 0.87 A/W.

Metamorphic InGaAs p-i-n Photodetectors with 1.75 μm Cut-Off Wavelength Grown on GaAs

Top-illuminated metamorphic InGaAs p-i-n photodetectors （PDs） with 50% cut-off wavelength of 1.75 μm at room temperature are fabricated on GaAs substrates. The PDs are grown by a solid-source molecular beam epitaxy system. The large lattice mismatch strain is accommodated by growth of a linearly graded buffer layer to create a high quality virtual InP substrate indium content in the metamorphic buffer layer linearly changes from 2% to 60%. The dark current densities are typically 5 × 10^-6 A/cm^2 at 0 V bias and 2.24 × 10^-4 A/cm^2 at a reverse bias of 5 V. At a wavelength of 1.55 μm, the PDs have an optical responsivity of 0.48 A/W, a linear photoresponse up to 5 mW optical power at -4 V bias. The measured -3 dB bandwidth of a 32 μm diameter device is 7 GHz. This work proves that InGaAs buffer layers grown by solid source MBE are promising candidates for GaAs-based long wavelength devices.

Influence of carrier gas H2 flow rate on quality of p-type GaN epilayer grown and annealed at lower temperatures

In this work, we study the influence of carrier gas H2flow rate on the quality of p-type GaN grown and annealed at lower temperatures. It is found that the concentration of H atoms in Mg-doped GaN epilayer can effectively decrease with appropriately reducing the carrier gas H2flow rate, and a high-quality p-type GaN layer could be obtained at a comparatively low annealing temperature by reducing the carrier gas H2flow rate. Meanwhile, it is found that the intensity and wavelength of DAP peak are changed as the annealing temperature varies, which shows that the thermal annealing has a remarkable effect not only on the activation of acceptors but also on the compensation donors.

Simulation of Far-Field Properties of Coherent Vertical Cavity Surface Emitting Laser Array

Far-field properties dependent on array scale, separation, element width and emitted wavelength are system atically analyzed theoretically and experimentally. An array model based on the finite-difference method is established to simulate the far-field profile of the coherent arrays. Some important conclusions are obtained. To achieve a higher quality beam, it is necessary to decrease separation between elements, or to increase the element width. Higher brightness can be achieved in the array with larger scale. Emitted wavelength also has an influence on the far-field profile. These analyses can be extended to the future design of coherent vertical cavity surface emitting laser arrays.

Simulation of structural design with high coupling efficiency in external cavity semiconductor laser

For external cavity semiconductor lasers(ECSLs),high coupling efficiency is critical to reducing the linewidth.In this paper,the coupling efficiency between the laser diode and the waveguide grating has been improved,with proposals for its improvement presented,including adding spot-size conversion(SSC)and using a silicon-on-insulator(SOI)waveguide.The results indicate an increase of coupling efficiency from 41.5%to 93.1%,which exhibits an improvement of approximately 51.6%over conventional schemes.The relationship between coupling efficiency and SOI waveguide structures is mainly concerned in this article.These findings provide a new way for the future research of the narrow linewidth of ECSL.

Layout Design and Optimization of RF Spiral Inductors on Silicon Substrate

The effects of key geometrical parameters on the performance of integrated spiral inductors are investigated with the 3D electromagnetic simulator HFSS.While varying geometrical parameters such as the number of turns(N),the width of the metal traces(W),the spacing between the traces(S),and the inner diameter(ID),changes in the performance of the inductors are analyzed in detail.The reasons for these changes in performance are presented.Simulation results indicate that the performance of an integrated spiral inductor can be improved by optimizing its layout.Some design rules are summarized.

Fabrication of VO_2 thin film by rapid thermal annealing in oxygen atmosphere and its metal–insulator phase transition properties

Vanadium dioxide thin films have been fabricated through sputtering vanadium thin films and rapid thermal annealing in oxygen. The microstructure and the metal-insulator transition properties of the vanadium dioxide thin films were inves- tigated by X-ray diffraction, X-ray photoelectron spectroscopy, and a spectrometer. It is found that the preferred orientation of the vanadium dioxide changes from （111） to （011 ） with increasing thickness of the vanadium thin film after rapid thermal annealing. The vanadium dioxide thin films exhibit an obvious metal-insulator transition with increasing temperature, and the phase transition temperature decreases as the film thickness increases. The transition shows hysteretic behaviors, and the hysteresis width decreases as the film thickness increases due to the higher concentration carriers resulted from the uncompleted lattice. The fabrication of vanadium dioxide thin films with higher concentration carriers will facilitate the nature study of the metal-insulator transition.

Oxide-aperture-dependent output characteristics of circularly symmetric VCSEL structure

The influence ot oxidation aperture on the output characteristics ot the circularly symmetric vertical-cavity-surtaceemitting laser(VCSEL) structure is investigated.To do so,VCSELs with different oxide aperture sizes are simulated by the finite-difference time-domain(FDTD) method.The relationships among the field distribution of mode superposition,mode wavelength,output spectra,and far-field divergence with different oxide apertures are obtained.Further,VCSELs respectively with oxide aperture sizes of 2.7 μm,4.4 μm,5.9 μm,7 μm,8 μm,9 μm,and 18.7 μm are fabricated and characterized.The maximum output power increases from 2.4 mW to 5.7 mW with oxide aperture increasing from 5.9 μm to 9 μm.Meanwhile,the wavelength tuning rate decreases from 0.93 nm/mA to 0.375 nm/mA when the oxide aperture increases from 2.7 μm to 9 μm.The thermal resistance decreases from 2.815℃/mW to 1.015℃/mW when the oxide aperture increases from 4.4 μm to 18.7μm.It is demonstrated theoretically and experimentally that the wavelength spacing between adjacent modes increases with the augment of the injection current and the spacing becomes smaller with the oxide aperture increasing.Thus it can be reported that the aperture size can effectively reduce the mode overlaying but at the cost of the power decreasing and the wavelength tuning rate and thermal resistance increasing.

Graded index profiles and loss-induced single-mode characteristics in vertical-cavity surface-emitting lasers with petal-shape holey structure

The 850-nm oxide-confined vertical-cavity surface-emitting lasers with petal-shape holey structures are presented. An area-weighted average refractive index model is given to analyse their effective index profiles, and the graded index distribution in the holey region is demonstrated. The index step between the optical aperture and the holey region is obtained which is related merely to the etching depth. Four types of holey vertical-cavity surface-emitting lasers with different parameters are fabricated as well as the conventional oxide-confined vertical-cavity surface-emitting laser. Compared with the conventional oxide-confined vertical-cavity surface-emitting laser without etched holes, the holey vertical-cavity surface-emitting laser possesses an improved beam quality due to its graded index distribution, but has a lower output power, higher threshold current and lower slope efficiency. With the hole number increased, the holey vertical-cavity surface-emitting laser can realize the single-mode operation throughout the entire current range, and reduces the beam divergence further. The loss mechanism is used to explain the single-mode characteristic, and the reduced beam divergence is attributed to the shallow etching. High coupling efficiency of 86% to a multi-mode fibre is achieved for the single-mode device in the experiment.

Generation of mid-infrared supercontinuum by designing circular photonic crystal fiber

A circular photonic crystal fiber(C-PCF)based on As2 Se3 is designed,which has three zero dispersion wavelengths and flat dispersion.Using this fiber,a wide mid-infrared supercontinuum(MIR-SC)can be generated by launching a femtosecond pulse in the first anomalous dispersion region.The simulation results show that the MIR-SC is formed by soliton self-frequency shift and direct soliton spectrum tunneling on the long wavelength side and self-phase modulation,soliton fission on the short wavelength side.Further,optical shocking and four-wave mixing(FWM)are not conducive to the long-wavelength extension of MIR-SC,while the number and intensity of fundamental solitons have a greater effect on the short-wavelength extension of MIR-SC.The generation of optical shocking waves,FWM waves and fundamental solitons can be obviously affected by changing the fiber length and input pulse parameters,so that the spectrum range and flatness can be adjusted with great freedom.Finally,under the conditions of 4000 W pulse peak power,30 fs pulse width,47 mm fiber length,and 0 initial chirp,a wide MIR-SC with a coverage range of 2.535μm-16.6μm is obtained.These numerical results are encouraging because they demonstrate that the spread of MIR-SC towards the red and blue ends can be manipulated by choosing the appropriate incident pulse and designing optimized fiber parameters,which contributes to applications in such diverse areas as spectroscopy,metrology and tomography.

An Array Consisting of 10 High-Speed Side-Illuminated Evanescently Coupled Waveguide Photodetectors Each with a Bandwidth of 20 GHz

We design and fabricate a parallel system with 10 high speed side-illuminated evanescently coupled waveguide photodetectors （ECPDs）. The 10 ECPDs exhibit a uniform 3dB bandwidth of 20 GHz and low dark current of about i nA at 2 V reverse bias. The 10 ECPDs also exhibit uniform photo-responsivity of about 0.23A/W with an active region of 5 × 25μmS. The photodetector array has a total bandwidth of more than 200 GHz and can be integrated with other optoelectronic devices.

Butt-joint regrowth method by MOCVD for integration of evanescent wave coupled photodetector and multi-quantum well semiconductor optical amplifier

We have realized integration of evanescent wave coupled photodetector(ECPD)and multi-quantum well(MQW)semiconductor optical amplifier(SOA)on MOCVD platform by investigating butt-joint regrowth method of thick InP/InGaAsP waveguides to deep etched SOA mesas.The combination of inductively coupled plasma etching and wet chemical etching technique has been studied to define the final mesa shape before regrowth.By comparing the etching profiles of different non-selective etchants,we have obtained a controllable non-reentrant mesa shape with smooth sidewall by applying one step 2 HBr:2 H_(3)PO_(4):K_(2)Cr_(2)O_(7)wet etching.A high growth temperature of 680℃is found helpful to enhance planar regrowth.By comparing the growth morphologies and simulating optical transmission along different directions,we determined that waveguides should travel across the regrowth interface along the[110]direction.The relation between growth rate and mask design has been extensively studied and the result can provide an important guidance for future mask design and vertical alignment between the active and passive cores.ECPD-SOA integrated device has been successfully achieved by this method without further regrowth steps and provided a responsivity of 7.8 A/W.The butt-joint interface insertion loss is estimated to be 1.05 dB/interface.

Energy band adjustment of 808 nm GaAs laser power converters via gradient doping

The gradient doping regions were employed in the emitter layer and the base layer of GaAs based laser power converters(LPCs).Silvaco TCAD was used to numerically simulate the linear gradient doping and exponential gradient doping structure,and analyze the transport process of photogenerated carriers.Energy band adjustment via gradient doping improved the separation and transport efficiency of photogenerated carriers and reduced the total recombination rate of GaAs LPCs.Compared with traditional structure of LPCs,the photoelectric conversion efficiency of LPCs with linear and exponential gradient doping structure were improved from 52.7%to 57.2%and 57.7%,respectively,under 808 nm laser light at the power density of 1 W/cm^(2).