For operation and manipulation with nanometric positioning precision,an integrated micro nano-positioning xy-stage is developed,which is mainly composed of a silicon-based xy-stage,comb-driven actuator and displacemen...For operation and manipulation with nanometric positioning precision,an integrated micro nano-positioning xy-stage is developed,which is mainly composed of a silicon-based xy-stage,comb-driven actuator and displacement sensor.The high-aspect-ratio comb-driven xy-stage is achieved by deep reactive ion etching (DRIE) in both sides of wafer.The displacement sensor is mainly composed of four vertical sidewall surface piezoresistor connected to form a full Wheatstone bridge.A simple vertical sidewall surface piezoresistor process which improves on the basis of the conventional surface piezoresistor technique is proposed.The experimental results verify the integrated micro nano-positioning xy-stage including the vertical sidewall surface piezoresistor technique.The sensitivity of the fabricated piezoresistive sensors is better than 1.17 mV/μm without amplification and the linearity is better than 0.814%.Under 30 V driving voltage,a ±10 μm single-axis displacement is measured without crosstalk.The displacement resolution of the micro xy-stage is better than 10.8 nm.展开更多
基金Funded by the High Technology Research and Development Programme of China (2007AA04Z315)
文摘For operation and manipulation with nanometric positioning precision,an integrated micro nano-positioning xy-stage is developed,which is mainly composed of a silicon-based xy-stage,comb-driven actuator and displacement sensor.The high-aspect-ratio comb-driven xy-stage is achieved by deep reactive ion etching (DRIE) in both sides of wafer.The displacement sensor is mainly composed of four vertical sidewall surface piezoresistor connected to form a full Wheatstone bridge.A simple vertical sidewall surface piezoresistor process which improves on the basis of the conventional surface piezoresistor technique is proposed.The experimental results verify the integrated micro nano-positioning xy-stage including the vertical sidewall surface piezoresistor technique.The sensitivity of the fabricated piezoresistive sensors is better than 1.17 mV/μm without amplification and the linearity is better than 0.814%.Under 30 V driving voltage,a ±10 μm single-axis displacement is measured without crosstalk.The displacement resolution of the micro xy-stage is better than 10.8 nm.
