In the original publication [ 1 ] of this paper, the last supported grant number＂ 11474247＂ should be ＂11474274＂.G. N. Wei, X. Dai, Q. Feng, W. G. Luo, Y. Y. Li, K. Wang, L. Y. Zhang, W. W. Pan, S. M. Wang, S. Y....In the original publication [ 1 ] of this paper, the last supported grant number＂ 11474247＂ should be ＂11474274＂.G. N. Wei, X. Dai, Q. Feng, W. G. Luo, Y. Y. Li, K. Wang, L. Y. Zhang, W. W. Pan, S. M. Wang, S. Y. Yang, and K. Y. Wang, Sci. China-Phys. Mech. Astron. 60, 047022 （2017）.展开更多
III-V Semiconductors containing a small amount of Bi, known as dilute bismides, have attracted great interest in recent years, due to the large band-gap reduction and other unique properties [1,2]. Previous studies ha...III-V Semiconductors containing a small amount of Bi, known as dilute bismides, have attracted great interest in recent years, due to the large band-gap reduction and other unique properties [1,2]. Previous studies have been pri- marily focused on the growth and optical properties of the GaAs-based bismuthides [3], while the properties of other dilute bismides are less well understood. Berding et al. [4] theoretically predicted that InPBi is expected to be an attractive candidate for narrow-gap applications. Experimentally, the InPBi alloy with good single crystal quality has been successfully synthesized recently and exhibits strong and broad photoluminescence at room temperature [5,6]. However, the electric transport characteristics of the InPBi alloy are poorly understood. In this work, we systematically investigate the effect of Bi incorporation on electric transport properties of the InP1-xBix alloys.展开更多
文摘In the original publication [ 1 ] of this paper, the last supported grant number＂ 11474247＂ should be ＂11474274＂.G. N. Wei, X. Dai, Q. Feng, W. G. Luo, Y. Y. Li, K. Wang, L. Y. Zhang, W. W. Pan, S. M. Wang, S. Y. Yang, and K. Y. Wang, Sci. China-Phys. Mech. Astron. 60, 047022 （2017）.
基金supported by the National Basic Research Program of China(Grant No.2014CB643900)the National Natural Science Foundation of China(Grant Nos.61225021,11474272,11204296,and 11474247)
文摘III-V Semiconductors containing a small amount of Bi, known as dilute bismides, have attracted great interest in recent years, due to the large band-gap reduction and other unique properties [1,2]. Previous studies have been pri- marily focused on the growth and optical properties of the GaAs-based bismuthides [3], while the properties of other dilute bismides are less well understood. Berding et al. [4] theoretically predicted that InPBi is expected to be an attractive candidate for narrow-gap applications. Experimentally, the InPBi alloy with good single crystal quality has been successfully synthesized recently and exhibits strong and broad photoluminescence at room temperature [5,6]. However, the electric transport characteristics of the InPBi alloy are poorly understood. In this work, we systematically investigate the effect of Bi incorporation on electric transport properties of the InP1-xBix alloys.
