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Ⅰ-Ⅴ Characteristics of Metal/Polynitrobenzene Junctions
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作者 ZHENG Hai-peng ZHANG Rui-feng +2 位作者 HUANG Jing-song LIU Shi-yong SHEN Jia-cong 《Chinese Physics Letters》 SCIE CAS CSCD 1997年第5期375-378,共4页
We used a new polyphenylene derivative-polynitrobenzene(PNB)to construct metal/polymer Schottky devices,and studied the influence of polymer film thickness,thermal treatment and different molar-ratio of dopant on the ... We used a new polyphenylene derivative-polynitrobenzene(PNB)to construct metal/polymer Schottky devices,and studied the influence of polymer film thickness,thermal treatment and different molar-ratio of dopant on the electrical properties of the junctions.The Al/PNB junction with 100nm in thickness of pure PNB film exhibited a relatively good Ⅰ-Ⅴ behavior.But the open voltage and rectification chatacteristics improved greatly when the PNB film was heated or lightly doped with poly-N-vinylcarbazole. 展开更多
关键词 DOPANT FILM SCHOTTKY
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