Research progress in quantum key distribution

Quantum key distribution(QKD)is a sophisticated method for securing information by leveraging the principles of quantum mechanics.Its objective is to establish a confidential key between authorized partners who are connected via both a quantum channel and a classical authentication channel.This paper presents a comprehensive overview of QKD protocols,chip-based QKD systems,quantum light sources,quantum detectors,fiber-based QKD networks,space-based QKD systems,as well as the applications and prospects of QKD technology.

Temperature characterizations of silica asymmetric Mach–Zehnder interferometer chip for quantum key distribution

Quantum key distribution(QKD)system based on passive silica planar lightwave circuit(PLC)asymmetric Mach–Zehnder interferometers(AMZI)is characterized with thermal stability,low loss and sufficient integration scalability.However,waveguide stresses,both intrinsic and temperature-induced stresses,have significant impacts on the stable operation of the system.We have designed silica AMZI chips of 400 ps delay,with bend waveguides length equalized for both long and short arms to balance the stresses thereof.The temperature characteristics of the silica PLC AMZI chip are studied.The interference visibility at the single photon level is kept higher than 95%over a wide temperature range of 12℃.The delay time change is 0.321 ps within a temperature change of 40℃.The spectral shift is 0.0011 nm/0.1℃.Temperature-induced delay time and peak wavelength variations do not affect the interference visibility.The experiment results demonstrate the advantage of being tolerant to chip temperature fluctuations.

Multifunctional interfacial molecular bridge enabled by an aggregation-induced emission strategy for enhancing efficiency and UV stability of perovskite solar cells

The interface defects between the electron transport layer(ETL)and the perovskite layer,as well as the low ultraviolet(UV)light utilization rate of the perovskite absorption layer,pose significant challenges for the commercialization of perovskite solar cells(PSCs).To address this issue,this paper proposes an innovative multifunctional interface modulation strategy by introducing aggregation-induced emission(AIE)molecule 5-[4-[1,2,2-tri[4-(3,5-dicarboxyphenyl)phenyl]ethylene]phenyl]benzene-1,3-dicarboxylic acid(H_(8)ETTB)at the SnO_(2)ETL/perovskite interface.Firstly,the interaction of H_(8)ETTB with the SnO_(2)surface,facilitated by its carboxyl groups,is effective in passivating surface defects caused by noncoord inated Sn and O vacancies.This interaction enhances the conductivity of the SnO_(2)film and adjusts energy levels,leading to enhanced charge carrier transport.Simultaneously,H_(8)ETTB can passivate noncoord inated Pb^(2+)ions at the perovskite interface,promoting perovskite crystallization and reducing the interface energy barrier,resulting in a perovskite film with low defects and high crystalline quality.More importantly,the H_(8)ETTB molecule,can convert UV light into light absorbable by the perovskite,thereby reducing damage caused by UV light and improving the device's utilization of UV.Consequently,the champion PSC based on SnO_(2)-H_(8)ETTB achieves an impressing efficiency of 23.32%and significantly improved photostability compared with the control device after continuous exposure to intense UV radiation.In addition,the Cs_(0.05)(FA_(0.95)MA_(0.05))_(0.95)Pb(I_(0.95)Br_(0.05))_(3)based device can achieve maximum efficiency of 24.01%,demonstrating the effectiveness and universality of this strategy.Overall,this innovative interface bridging strategy effectively tackles interface defects and low UV light utilization in PSCs,presenting a promising approach for achieving highly efficient and stable PSCs.

Two-step growth of β-Ga_(2)O_(3) on c-plane sapphire using MOCVD for solar-blind photodetector

In this work,a two-step metal organic chemical vapor deposition(MOCVD)method was applied for growingβ-Ga_(2)O_(3) film on c-plane sapphire.Optimized buffer layer growth temperature(T_(B))was found at 700℃ and theβ-Ga_(2)O_(3) film with full width at half maximum(FWHM)of 0.66°was achieved.A metal−semiconductor−metal(MSM)solar-blind photodetector(PD)was fabricated based on theβ-Ga_(2)O_(3) film.Ultrahigh responsivity of 1422 A/W@254 nm and photo-to-dark current ratio(PDCR)of 10^(6) at 10 V bias were obtained.The detectivity of 2.5×10^(15) Jones proved that the photodetector has outstanding performance in detecting weak signals.Moreover,the photodetector exhibited superior wavelength selectivity with rejection ratio(R_(250 nm)/R_(400 nm))of 105.These results indicate that the two-step method is a promising approach for preparation of high-qualityβ-Ga_(2)O_(3)films for high-performance solar-blind photodetectors.

Structured Illumination Chip Based on Integrated Optics

A compact structured illumination chip based on integrated optics is proposed and fabricated on a silicon-on- insulator platform. Based on the simulation of Caussian beam interference, we adopt a chirped diffraction grating to achieve a specific interference pattern. The experimental results match well with the simulations. The portability and flexibility of the structured illumination chip can be increased greatly through horizontal encapsulation. High levels of integration, compared with the conventional structured illumination approach, make this chip very compact, with a footprint of only around 1 mm2. The chip has no optical lenses and can be easily combined with a microfluidic system. These properties would make the chip very suitable for portable 3D scanner and compact super-resolution microscopy applications.

High-performance waveguide-integrated Ge/Si avalanche photodetector with small contact angle between selectively epitaxial growth Ge and Si layers

Step-coupler waveguide-integrated Ge/Si avalanche photodetector(APD) is based on the vertical multimode interference(MMI), enhancing light scattering towards the Ge active region and creating mirror images of optical modes close to the Ge layer. However, there are two ineluctable contact angels between selectively epitaxial growth Ge and Si layers and selectively epitaxial growth Si and Si substrate, which has an effect on the coupling efficiency and the absorption of the photodetector. Therefore, step-coupled Ge/Si avalanche photodetectors with different step lengths are designed and fabricated. It is found that responsivity of APDs with step-coupler-length of 3.0 μm is 0.51 A/W at-6 V, 21% higher than that of 1.5 μm, which matches well with simulation absorption. The multiplication gain factor is as high as 50, and the maximum gain-bandwidth product reaches up to 376 GHz.

Characterization of Interface State Density of Ni/p-GaN Structures by Capacitance/Conductance-Voltage-Frequency Measurements

For the frequency range of I kHz-lOMHz, the interface state density of Ni contacts on p-GaN is studied using capacitance-voltage （C-V） and conductance-frequency-voltage （G-f-V） measurements at room temperature. To obtain the real capacitance and interface state density of the Ni/p-GaN structures, the effects of the series resistance （Rs） on high-frequency （SMHz） capacitance values measured at a reverse and a forward bias are investigated. The mean interface state densities obtained from the CHF-CLF capacitance and the conductance method are 2 ×1012 e V-1 cm-2 and 0.94 × 1012 eV-1 cm-2, respectively. Furthermore, the interface state density derived from the conductance method is higher than that reported from the Ni/n-GaN in the literature, which is ascribed to a poor crystal quality and to a large defect density of the Mg-doped p-GaN.

InP-based evanescently coupled high-responsivity photodiodes with extremely low dark current density integrated diluted waveguide at 1550 nm

In this paper, we have demonstrated a high performance waveguide photodiode integrated diluted waveguide serving as a fibre-to-waveguide coupler to achieve high coupling efficiency. High responsivity （〉 1 A/W）, high saturation power （〉 45 mA） in the static state and extremely low dark current density （0.04 pA/μm2） with 3 dB bandwidth at 13.4 GHz have been achieved.

Imaging alignment of rotational state-selected CH_3I molecule

We experimentally and numerically investigate CH_3I molecular alignment by using a femtosecond laser and a hexapole. The hexapole provides the single |111〉rotational state condition at 4.5-kV hexapole rod voltage. Based on this single rotational state, an enhanced alignment degree of 0.73 is achieved. Our experimental results are in agreement with the simulation results. We experimentally obtain the ion velocity map images and show the influence of the initial rotational-state population. With the I+ion images and angular distributions at different pump-probe delay time, the alignment and anti-alignment phenomena are further demonstrated. The molecules will be under field-free conditions when the laser effect disappears completely at the full revival time. Our work shows that the quantum control and spatial control on CH_3I molecules can be realized and molecular coordinate frame can be obtained for further molecular experiment.

Modeling and analysis of silicon-on-insulator elliptical microring resonators for future high-density integrated photonic circuits

We propose a novel resonator containing an elliptical microring based on a silicon-on-insulator platform. Simu- lations using the three-dimensional finite-difference time-domain method show that the novel elliptical microring can efficiently enhance the mode coupling between straight bus waveguides and resonator waveguides or between adjacent resonators while preserving relatively high intrinsic quality factors with large free spectral range. The proposed resonator would be an alternative choice for future high-density integrated photonic circuits.

InP Based PD/EAM Integrated Photonic Switch

A new compact three-port InP based PD/EAM （photo-detector/electro-absorption modulator） integrated photonic switch is reported. The device demonstrates bi-directional wavelength conversion over 20nm at 2.5 Gbit/s with a low input optical power of about 20mW.

Spontaneous-emission control by local density of states of photonic crystal cavity

The local density of states （LDOS） of two-dimensional square lattice photonic crystal （PhC） defect cavity is studied. The results show that the LDOS in the centre is greatly reduced, while the LDOS at the point off the centre （for example, at the point （0.3a, 0.4a）, where a is the lattice constant） is extremely enhanced. Further, the disordered radii are introduced to imitate the real devices fabricated in our experiment, and then we study the LDOS of PhC cavity with configurations of different disordered radii. The results show that in the disordered cavity, the LDOS in the centre is still greatly reduced, while the LDOS at the point （0.3a, 0.4a） is still extremely enhanced. It shows that the LDOS analysis is useful. When a laser is designed on the basis of the square lattice PhC rod cavity, in order to enhance the spontaneous emission, the active materials should not be inserted in the centre of the cavity, but located at positions off the centre. So LDOS method gives a guide to design the positions of the active materials （quantum dots） in the lasers.

Monolithically Integrated Transceiver with Novel Y-Branch by Bundle Integrated Waveguide for Fibre Optic Gyroscope

A novel Y-branch based monolithic transceiver with a superluminescent diode and a waveguide photodiode （Y-SDL-PD） is designed and fabricated by the method of bundle integrated waveguide （BIG） as the scheme for monolithic integration and angled Y-branch as the passive bi-directional waveguide. The simulations of BIG and Y-branches show low losses and improved far-field patterns, based on the beam propagation method （BPM）. The amplified spontaneous emission of the device is up to lOmW at 120mA with no threshold and saturation. Spectral characteristics of about 30nm width and less than 1dB modulation are achieved using the built-in anti- lasing ability of Y-branch. The beam divergence angles in horizontal and vertical directions are optimized to as small as 12°× 8°, resulting in good fibre coupling.

Photoelectron imaging on vibrational excitation and Rydberg intermediate states in multi-photon ionization process of NH3 molecule

The ionization processes of NH3 molecule are studied by photoelectron velocity map imaging technique in a linearly polarized 400-nm femtosecond laser field. The two-dimensional photoelectron images from ammonia molecules under different laser intensities are obtained. In the slow electron region, the values of kinetic energy of photoelectrons corresponding to peaks 1, 2, 3, and 4 are 0.27, 0.86, 1.16, and 1.6 eV, respectively. With both the kinetic energy and angular distribution of photoelectrons from NH3 molecules, we can confirm that the two-photon excited intermediate Rydberg state is A^1 A2" (v2'=3) state for photoelectron peaks 2, 3, 4, and the three peaks are marked as 1223 (2 + 2), 1123 (2 + 2), and 1023 (2 + 2) multi-photon processes, respectively. Then, peak 1 is found by adding a hexapole between the source chamber and the detection chamber to realize the rotational state selection and beam focusing. Peak 1 is labeled as the 1323 (3 + 1) multi-photon process through the intermediate Rydberg state E^1A1'. The phenomena of channel switching are found in the slow electron kinetic energy distributions. Our calculations and experimental results indicate that the stretching vibrational mode of ammonia molecules varies with channels, while the umbrella vibration does not. In addition, we consider and discuss the ac-Stark effect in a strong laser field. Peaks 5 and 6 are marked as (2 + 2 + 1) and (2 + 2 + 2) above threshold ionization processes in the fast electron region.

Quantum key distribution transmitter chip based on hybrid-integration of silica and lithium niobates

A quantum key distribution transmitter chip based on hybrid-integration of silica planar light-wave circuit(PLC)and lithium niobates(LN)modulator PLC is presented.The silica part consists of a tunable directional coupler and 400-ps delay line,and the LN part is made up of a Y-branch,with electro-optic modulators on both arms.The two parts are facet-coupled to form an asymmetric Mach-Zehnder interferometer.We successfully encode and decode four BB84 states at 156.25-MHz repetition rate.Fast phase-encoding of 0 orπis achieved,with interference fringe visibilities 78.53%and 82.68%for states|+〉and|-〉,respectively.With the aid of an extra off-chip LN intensity modulator,two time-bin states are prepared and the extinction ratios are 18.65 dB and 15.46 dB for states|0〉and|1〉,respectively.

Ship Weather Routing Based on Hybrid Genetic Algorithm Under Complicated Sea Conditions

Considering the effects of increased economic globalization and global warming,developing methods for reducing shipping costs and greenhouse gas emissions in ocean transportation has become crucial.Owing to its key role in modern navigation technology,ship weather routing is the research focus of several scholars in this field.This study presents a hybrid genetic algorithm for the design of an optimal ship route for safe transoceanic navigation under complicated sea conditions.On the basis of the basic genetic algorithm,simulated annealing algorithm is introduced to enhance its local search ability and avoid premature convergence,with the ship’s voyage time and fuel consumption as optimization goals.Then,a mathematical model of ship weather routing is developed based on the grid system.A measure of fitness calibration is proposed,which can change the selection pressure of the algorithm as the population evolves.In addition,a hybrid crossover operator is proposed to enhance the ability to find the optimal solution and accelerate the convergence speed of the algorithm.Finally,a multi-population technique is applied to improve the robustness of the algorithm using different evolutionary strategies.

Wafer.Level Testable High-Speed Silicon Microring Modulator Integrated with Grating Couplers

A wafer-level testable silicon-on-insulator-based microring modulator is demonstrated with high modulation speed, to which the grating couplers are integrated as the fiber-to-chip interfaces. Cost-efflcient fabrications are realized with the help of optical structure and etching depth designs. Grating couplers and waveguides are patterned and etched together with the same slab thickness. Finally we obtain a 3-dB coupling bandwidth of about 6Ohm and 10 Gb/s nonreturn-to-zero modulation by wafer-level optical and electrical measurements.

Local density of optical states calculated by the mode spectrum in stratified media

The local density of optical states(LDOS)is an important physical concept,which can characterize the spontaneous emission of microcavities.In order to calculate the LDOS,the relationship between the mode spectrum and the LDOS is established.Then,based on the transfer matrix method and the effective resonator model,the leaky loss of the leaky mode and the mode spectrum in the one-dimensional photonic bandgap crystal waveguide are calculated,results of which indicate that the mode spectrum can characterize the leaky loss of the leaky mode.At last,the density of optical states(DOS),and the LDOS in each layer are calculated.The partial DOS and the partial LDOS in the quantum well,related to the fundamental leaky mode,can be used to find out the optimal location of the quantum well in the defect layer to couple more useful photons into the lasing mode for lasers.

Preface to Special Issue on Novel Semiconductor-biochemical Sensors

Since 2020,the global outbreak and continued evolution of the COVID-19 pandemic have brought the concepts of nucleic acid,antigen-antibody,gene sequencing,and other biochemical testing into ordinary families.In this regard,novel semiconductor-biochemical sensors that convert biochemical information into monitorable electrical and optical signals according to specific rules have become increasingly important and indispensable.These sensors deeply fuse the technical advantages of semiconductors and biochemistry,integrating interdisciplinary subjects such as molecular biology,nanomaterials,microfluidics,artificial intelligence(AI),etc.With the advantages of fast speed,high sensitivity,high integration,easy mass manufacturing,the novel technologies are the"pioneer"of biomedical information acquisition and the"heart"of modern medical diagnostic equipment.Currently,the technologies are showing a spurt of development,with new products emerging,new functions being developed,and new application scenarios being expanded.The research hotspots cover a wide range,including immediate detection,non-invasive analysis,wearable devices,on-site monitoring,etc.This issue looks at the latest advances in the novel technologies for physiological dynamic monitoring of animals/plants and rapid detection of highly pathogenic pathogens,while covering applications in agriculture,fisheries,animal husbandry,biosecurity,and wearable medicine.

GaN based ultraviolet laser diodes

In the past few years,many groups have focused on the research and development of GaN-based ultraviolet laser diodes(UV LDs).Great progresses have been achieved even though many challenges exist.In this article,we analyze the challenges of developing GaN-based ultraviolet laser diodes,and the approaches to improve the performance of ultraviolet laser diode are reviewed.With these techniques,room temperature(RT)pulsed oscillation of AlGaN UVA(ultraviolet A)LD has been realized,with a lasing wavelength of 357.9 nm.Combining with the suppression of thermal effect,the high output power of 3.8 W UV LD with a lasing wavelength of 386.5 nm was also fabricated.